JP2004153268A5 - - Google Patents

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Publication number
JP2004153268A5
JP2004153268A5 JP2003361588A JP2003361588A JP2004153268A5 JP 2004153268 A5 JP2004153268 A5 JP 2004153268A5 JP 2003361588 A JP2003361588 A JP 2003361588A JP 2003361588 A JP2003361588 A JP 2003361588A JP 2004153268 A5 JP2004153268 A5 JP 2004153268A5
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JP
Japan
Prior art keywords
memory device
reference cell
magnetic
magnetization
orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003361588A
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English (en)
Japanese (ja)
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JP2004153268A (ja
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Publication date
Priority claimed from US10/283,559 external-priority patent/US6870758B2/en
Application filed filed Critical
Publication of JP2004153268A publication Critical patent/JP2004153268A/ja
Publication of JP2004153268A5 publication Critical patent/JP2004153268A5/ja
Pending legal-status Critical Current

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JP2003361588A 2002-10-30 2003-10-22 磁気メモリデバイスおよびそれを形成するための方法 Pending JP2004153268A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/283,559 US6870758B2 (en) 2002-10-30 2002-10-30 Magnetic memory device and methods for making same

Publications (2)

Publication Number Publication Date
JP2004153268A JP2004153268A (ja) 2004-05-27
JP2004153268A5 true JP2004153268A5 (enExample) 2006-09-07

Family

ID=32174680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003361588A Pending JP2004153268A (ja) 2002-10-30 2003-10-22 磁気メモリデバイスおよびそれを形成するための方法

Country Status (2)

Country Link
US (3) US6870758B2 (enExample)
JP (1) JP2004153268A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6870758B2 (en) * 2002-10-30 2005-03-22 Hewlett-Packard Development Company, L.P. Magnetic memory device and methods for making same
TWI279798B (en) * 2005-08-04 2007-04-21 Ind Tech Res Inst Magnetoresistive memory arrays
CN101501849B (zh) * 2006-08-25 2011-01-12 松下电器产业株式会社 存储元件、存储器装置和半导体集成电路
JP4987830B2 (ja) * 2008-09-25 2012-07-25 株式会社東芝 磁気メモリ
CA2752816A1 (en) 2009-02-27 2010-09-02 Abb Research Ltd. A hybrid distribution transformer with an integrated voltage source converter
US8482967B2 (en) * 2010-11-03 2013-07-09 Seagate Technology Llc Magnetic memory element with multi-domain storage layer
US8661757B2 (en) 2011-03-23 2014-03-04 United State Gypsum Company 30-minute residential fire protection of floors
US8767432B1 (en) 2012-12-11 2014-07-01 International Business Machines Corporation Method and apparatus for controlled application of Oersted field to magnetic memory structure
US10096767B2 (en) * 2013-03-09 2018-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Elongated magnetoresistive tunnel junction structure
JP5731624B1 (ja) * 2013-12-04 2015-06-10 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
KR102175471B1 (ko) 2014-04-04 2020-11-06 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법

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US5465185A (en) 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US6169686B1 (en) * 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
JP4374646B2 (ja) * 1998-06-30 2009-12-02 ソニー株式会社 磁気記憶装置及びアドレッシング方法
US5953248A (en) * 1998-07-20 1999-09-14 Motorola, Inc. Low switching field magnetic tunneling junction for high density arrays
US6191972B1 (en) * 1999-04-30 2001-02-20 Nec Corporation Magnetic random access memory circuit
JP2001156357A (ja) * 1999-09-16 2001-06-08 Toshiba Corp 磁気抵抗効果素子および磁気記録素子
US6607924B2 (en) * 2000-04-28 2003-08-19 Hewlett-Packard Company Solid-state memory with magnetic storage cells
US6205053B1 (en) 2000-06-20 2001-03-20 Hewlett-Packard Company Magnetically stable magnetoresistive memory element
US6538921B2 (en) * 2000-08-17 2003-03-25 Nve Corporation Circuit selection of magnetic memory cells and related cell structures
JP3583091B2 (ja) * 2000-09-11 2004-10-27 松下電器産業株式会社 磁気抵抗素子とその製造方法
DE10046782B4 (de) * 2000-09-21 2008-05-08 Forschungszentrum Jülich GmbH Magnetisches Bauelement mit einem magnetischen Schichtsystem und dessen Verwendung
AU2001287985A1 (en) * 2000-10-17 2002-04-29 International Business Machines Corporation Magnetic element, memory device and write head
JP2002151660A (ja) * 2000-11-14 2002-05-24 Fujitsu Ltd 磁気ランダム・アクセス・メモリ及びその磁気情報書き込み方法
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US6538920B2 (en) * 2001-04-02 2003-03-25 Manish Sharma Cladded read conductor for a pinned-on-the-fly soft reference layer
JP2002299584A (ja) * 2001-04-03 2002-10-11 Mitsubishi Electric Corp 磁気ランダムアクセスメモリ装置および半導体装置
US6576969B2 (en) * 2001-09-25 2003-06-10 Hewlett-Packard Development Company, L.P. Magneto-resistive device having soft reference layer
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US6656372B2 (en) * 2001-10-04 2003-12-02 Micron Technology, Inc. Methods of making magnetoresistive memory devices
US6815248B2 (en) * 2002-04-18 2004-11-09 Infineon Technologies Ag Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
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US6654278B1 (en) * 2002-07-31 2003-11-25 Motorola, Inc. Magnetoresistance random access memory
US6870758B2 (en) * 2002-10-30 2005-03-22 Hewlett-Packard Development Company, L.P. Magnetic memory device and methods for making same

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