JP2004146823A5 - - Google Patents

Download PDF

Info

Publication number
JP2004146823A5
JP2004146823A5 JP2003345276A JP2003345276A JP2004146823A5 JP 2004146823 A5 JP2004146823 A5 JP 2004146823A5 JP 2003345276 A JP2003345276 A JP 2003345276A JP 2003345276 A JP2003345276 A JP 2003345276A JP 2004146823 A5 JP2004146823 A5 JP 2004146823A5
Authority
JP
Japan
Prior art keywords
laser
scanning
laser beam
irradiated
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003345276A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004146823A (ja
JP4498716B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003345276A priority Critical patent/JP4498716B2/ja
Priority claimed from JP2003345276A external-priority patent/JP4498716B2/ja
Publication of JP2004146823A publication Critical patent/JP2004146823A/ja
Publication of JP2004146823A5 publication Critical patent/JP2004146823A5/ja
Application granted granted Critical
Publication of JP4498716B2 publication Critical patent/JP4498716B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003345276A 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 Expired - Fee Related JP4498716B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003345276A JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002291545 2002-10-03
JP2003345276A JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004146823A JP2004146823A (ja) 2004-05-20
JP2004146823A5 true JP2004146823A5 (ko) 2006-11-16
JP4498716B2 JP4498716B2 (ja) 2010-07-07

Family

ID=32473426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003345276A Expired - Fee Related JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4498716B2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101109809B1 (ko) 2003-06-26 2012-03-14 세키스이가가쿠 고교가부시키가이샤 도공 페이스트용 결합제 수지
WO2007069516A1 (en) * 2005-12-16 2007-06-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
JP5500573B2 (ja) * 2009-05-19 2014-05-21 株式会社日本製鋼所 半導体不純物の活性化方法
CN102290342B (zh) * 2011-09-05 2013-07-03 清华大学 一种采用六边形束斑的激光扫描退火方法
SG10201503478UA (en) * 2012-06-11 2015-06-29 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
PL2869963T3 (pl) 2012-07-04 2017-05-31 Saint-Gobain Glass France Urządzenie i sposób obróbki laserowej podłoży o dużej powierzchni z wykorzystaniem co najmniej dwóch mostków
JP6665624B2 (ja) * 2015-03-27 2020-03-13 日本製鉄株式会社 試験装置およびそれを備えた電子顕微鏡
CN111863342B (zh) * 2019-04-28 2021-08-27 上海微电子装备（集团）股份有限公司 一种ito退火工艺
KR20230028284A (ko) * 2020-06-18 2023-02-28 스미도모쥬기가이고교 가부시키가이샤 레이저어닐링장치의 제어장치 및 레이저어닐링방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795538B2 (ja) * 1986-05-02 1995-10-11 旭硝子株式会社 レ−ザ−アニ−ル装置
JP2001326363A (ja) * 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Similar Documents

Publication Publication Date Title
JP5133158B2 (ja) 多重ビームレーザー装置
JP2007253203A (ja) レーザ加工用光学装置
CN107065155B (zh) 一种激光清洗用可变焦光学单元及激光清洗装置
KR101582632B1 (ko) 프레넬 영역 소자를 이용한 기판 절단 방법
JP2009082958A (ja) レーザ加工装置及びアキシコンレンズ
ATE376902T1 (de) Laserbearbeitungsvorrichtung mit einem polygonspiegel
US20110147620A1 (en) Laser patterning using a structured optical element and focused beam
JP2008272830A (ja) レーザ加工装置
JP2004146823A5 (ko)
KR20170048969A (ko) 다중 초점을 이용한 레이저 가공방법 및 레이저 가공장치
JP2009178720A (ja) レーザ加工装置
KR101918203B1 (ko) 레이저 처리 장치 및 방법
US20190265489A1 (en) Laser processing system with modified beam energy distribution
CN105319722A (zh) 高效率的线形成光学系统及方法
US20120125901A1 (en) Apparatus and system for improving depth of focus
JP2016513359A (ja) 半導体基板を通過する中赤外レーザ光の透過による熱処理
JP2003088966A5 (ja) レーザマーキング装置，及び２次元コード印字方法
CN216485792U (zh) 一种基于平凸透镜的平顶光整形激光扫描装置
CN113960783A (zh) 一种基于平凸透镜的平顶光整形激光扫描装置及工作方法
JP4395110B2 (ja) 透明材料へのマーキング方法およびこれを用いた装置
TW202231394A (zh) 用於在工作平面上產生雷射光線的裝置
KR20230048546A (ko) 작업 평면 상에 정의된 레이저 라인을 생성하는 장치
KR100862522B1 (ko) 레이저가공 장치 및 기판 절단 방법
JP5241129B2 (ja) レーザ加工装置及びレーザ加工方法
KR101423497B1 (ko) 웨이퍼 다이싱용 레이저 가공장치 및 이를 이용한 웨이퍼 다이싱 방법