JP2004146525A5 - - Google Patents

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Publication number
JP2004146525A5
JP2004146525A5 JP2002308673A JP2002308673A JP2004146525A5 JP 2004146525 A5 JP2004146525 A5 JP 2004146525A5 JP 2002308673 A JP2002308673 A JP 2002308673A JP 2002308673 A JP2002308673 A JP 2002308673A JP 2004146525 A5 JP2004146525 A5 JP 2004146525A5
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JP
Japan
Prior art keywords
based semiconductor
gan
vol
heat treatment
ratio
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Pending
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JP2002308673A
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English (en)
Japanese (ja)
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JP2004146525A (ja
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Priority to JP2002308673A priority Critical patent/JP2004146525A/ja
Priority claimed from JP2002308673A external-priority patent/JP2004146525A/ja
Publication of JP2004146525A publication Critical patent/JP2004146525A/ja
Publication of JP2004146525A5 publication Critical patent/JP2004146525A5/ja
Pending legal-status Critical Current

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JP2002308673A 2002-10-23 2002-10-23 ｐ型ＧａＮ系化合物半導体の製造方法 Pending JP2004146525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002308673A JP2004146525A (ja) 2002-10-23 2002-10-23 ｐ型ＧａＮ系化合物半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002308673A JP2004146525A (ja) 2002-10-23 2002-10-23 ｐ型ＧａＮ系化合物半導体の製造方法

Publications (2)

Publication Number Publication Date
JP2004146525A JP2004146525A (ja) 2004-05-20
JP2004146525A5 true JP2004146525A5 (https=) 2005-08-11

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ID=32454753

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Application Number Title Priority Date Filing Date
JP2002308673A Pending JP2004146525A (ja) 2002-10-23 2002-10-23 ｐ型ＧａＮ系化合物半導体の製造方法

Country Status (1)

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JP (1) JP2004146525A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112167A1 (ja) 2005-04-01 2006-10-26 Sharp Kabushiki Kaisha ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
KR20070095603A (ko) * 2006-03-22 2007-10-01 삼성코닝 주식회사 질화물계 반도체 기판의 아연 이온주입방법
JP2008235622A (ja) * 2007-03-22 2008-10-02 Mitsubishi Chemicals Corp ｐ型窒化物系化合物半導体膜の作製方法
JP4416044B1 (ja) 2008-10-07 2010-02-17 住友電気工業株式会社 ｐ型窒化ガリウム系半導体を作製する方法、窒化物系半導体素子を作製する方法、及びエピタキシャルウエハを作製する方法
JP5240171B2 (ja) * 2009-11-20 2013-07-17 住友電気工業株式会社 窒化ガリウム系半導体、半導体光素子、半導体レーザ、発光ダイオード
CN110335927B (zh) * 2019-07-11 2020-10-30 马鞍山杰生半导体有限公司 紫外led及其制备方法

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