JP2004146525A - ｐ型ＧａＮ系化合物半導体の製造方法 - Google Patents

ｐ型ＧａＮ系化合物半導体の製造方法 Download PDF

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Publication number
JP2004146525A
JP2004146525A JP2002308673A JP2002308673A JP2004146525A JP 2004146525 A JP2004146525 A JP 2004146525A JP 2002308673 A JP2002308673 A JP 2002308673A JP 2002308673 A JP2002308673 A JP 2002308673A JP 2004146525 A JP2004146525 A JP 2004146525A
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gan
heat treatment
hydrogen
based semiconductor
manufacturing
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JP2004146525A5 (https=
Inventor
Hiroaki Okagawa
岡川　広明
Takashi Tsunekawa
常川　高志
Kazuyuki Tadatomo
只友　一行
Hiromitsu Kudo
工藤　広光
Yoichiro Ouchi
大内　洋一郎
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Mitsubishi Cable Industries Ltd
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Mitsubishi Cable Industries Ltd
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Priority to JP2002308673A priority Critical patent/JP2004146525A/ja
Publication of JP2004146525A publication Critical patent/JP2004146525A/ja
Publication of JP2004146525A5 publication Critical patent/JP2004146525A5/ja
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JP2002308673A 2002-10-23 2002-10-23 ｐ型ＧａＮ系化合物半導体の製造方法 Pending JP2004146525A (ja)

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JP2002308673A JP2004146525A (ja) 2002-10-23 2002-10-23 ｐ型ＧａＮ系化合物半導体の製造方法

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JP2002308673A JP2004146525A (ja) 2002-10-23 2002-10-23 ｐ型ＧａＮ系化合物半導体の製造方法

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JP2004146525A true JP2004146525A (ja) 2004-05-20
JP2004146525A5 JP2004146525A5 (https=) 2005-08-11

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258722A (ja) * 2006-03-22 2007-10-04 Samsung Corning Co Ltd 窒化物半導体基板の亜鉛イオン注入方法
JP2008235622A (ja) * 2007-03-22 2008-10-02 Mitsubishi Chemicals Corp ｐ型窒化物系化合物半導体膜の作製方法
JP2010093275A (ja) * 2009-11-20 2010-04-22 Sumitomo Electric Ind Ltd ｐ型窒化ガリウム系半導体を作製する方法、窒化物系半導体素子を作製する方法、及びエピタキシャルウエハを作製する方法
US8076165B2 (en) 2005-04-01 2011-12-13 Sharp Kabushiki Kaisha Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method
US8815621B2 (en) 2008-10-07 2014-08-26 Sumitomo Electric Industries, Ltd. Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer
JP2021015952A (ja) * 2019-07-11 2021-02-12 圓融光電科技股▲ふん▼有限公司 紫外線ｌｅｄ及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8076165B2 (en) 2005-04-01 2011-12-13 Sharp Kabushiki Kaisha Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method
JP2007258722A (ja) * 2006-03-22 2007-10-04 Samsung Corning Co Ltd 窒化物半導体基板の亜鉛イオン注入方法
JP2008235622A (ja) * 2007-03-22 2008-10-02 Mitsubishi Chemicals Corp ｐ型窒化物系化合物半導体膜の作製方法
US8815621B2 (en) 2008-10-07 2014-08-26 Sumitomo Electric Industries, Ltd. Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer
JP2010093275A (ja) * 2009-11-20 2010-04-22 Sumitomo Electric Ind Ltd ｐ型窒化ガリウム系半導体を作製する方法、窒化物系半導体素子を作製する方法、及びエピタキシャルウエハを作製する方法
JP2021015952A (ja) * 2019-07-11 2021-02-12 圓融光電科技股▲ふん▼有限公司 紫外線ｌｅｄ及びその製造方法
JP7295782B2 (ja) 2019-07-11 2023-06-21 圓融光電科技股▲ふん▼有限公司 紫外線ｌｅｄ及びその製造方法

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