JP2004103930A5 - - Google Patents

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Publication number
JP2004103930A5
JP2004103930A5 JP2002265473A JP2002265473A JP2004103930A5 JP 2004103930 A5 JP2004103930 A5 JP 2004103930A5 JP 2002265473 A JP2002265473 A JP 2002265473A JP 2002265473 A JP2002265473 A JP 2002265473A JP 2004103930 A5 JP2004103930 A5 JP 2004103930A5
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JP
Japan
Prior art keywords
gan
based semiconductor
growing
crystal
atmosphere
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JP2002265473A
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English (en)
Japanese (ja)
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JP2004103930A (ja
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Priority to JP2002265473A priority Critical patent/JP2004103930A/ja
Priority claimed from JP2002265473A external-priority patent/JP2004103930A/ja
Publication of JP2004103930A publication Critical patent/JP2004103930A/ja
Publication of JP2004103930A5 publication Critical patent/JP2004103930A5/ja
Pending legal-status Critical Current

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JP2002265473A 2002-09-11 2002-09-11 ｐ型ＧａＮ系化合物半導体の製造方法 Pending JP2004103930A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002265473A JP2004103930A (ja) 2002-09-11 2002-09-11 ｐ型ＧａＮ系化合物半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002265473A JP2004103930A (ja) 2002-09-11 2002-09-11 ｐ型ＧａＮ系化合物半導体の製造方法

Publications (2)

Publication Number Publication Date
JP2004103930A JP2004103930A (ja) 2004-04-02
JP2004103930A5 true JP2004103930A5 (https=) 2005-08-11

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ID=32264605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002265473A Pending JP2004103930A (ja) 2002-09-11 2002-09-11 ｐ型ＧａＮ系化合物半導体の製造方法

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JP (1) JP2004103930A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112167A1 (ja) * 2005-04-01 2006-10-26 Sharp Kabushiki Kaisha ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
TW200711171A (en) * 2005-04-05 2007-03-16 Toshiba Kk Gallium nitride based semiconductor device and method of manufacturing same
JP2008235622A (ja) * 2007-03-22 2008-10-02 Mitsubishi Chemicals Corp ｐ型窒化物系化合物半導体膜の作製方法

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