JP2004103930A - ｐ型ＧａＮ系化合物半導体の製造方法 - Google Patents
ｐ型ＧａＮ系化合物半導体の製造方法 Download PDFInfo
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- JP2004103930A JP2004103930A JP2002265473A JP2002265473A JP2004103930A JP 2004103930 A JP2004103930 A JP 2004103930A JP 2002265473 A JP2002265473 A JP 2002265473A JP 2002265473 A JP2002265473 A JP 2002265473A JP 2004103930 A JP2004103930 A JP 2004103930A
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- gan
- atmosphere
- based semiconductor
- crystal
- cooling
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 150000001875 compounds Chemical class 0.000 title description 6
- 239000013078 crystal Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 45
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000001816 cooling Methods 0.000 claims abstract description 33
- 239000012535 impurity Substances 0.000 claims abstract description 25
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 21
- 239000011261 inert gas Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 25
- 239000001257 hydrogen Substances 0.000 abstract description 25
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 25
- 238000002161 passivation Methods 0.000 abstract description 9
- 230000003213 activating effect Effects 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 66
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 239000010410 layer Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 description 8
- 238000010494 dissociation reaction Methods 0.000 description 7
- 230000005593 dissociations Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002265473A JP2004103930A (ja) | 2002-09-11 | 2002-09-11 | ｐ型ＧａＮ系化合物半導体の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002265473A JP2004103930A (ja) | 2002-09-11 | 2002-09-11 | ｐ型ＧａＮ系化合物半導体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004103930A true JP2004103930A (ja) | 2004-04-02 |
| JP2004103930A5 JP2004103930A5 (https=) | 2005-08-11 |
Family
ID=32264605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002265473A Pending JP2004103930A (ja) | 2002-09-11 | 2002-09-11 | ｐ型ＧａＮ系化合物半導体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004103930A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006112167A1 (ja) * | 2005-04-01 | 2006-10-26 | Sharp Kabushiki Kaisha | ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置 |
| JP2008235622A (ja) * | 2007-03-22 | 2008-10-02 | Mitsubishi Chemicals Corp | ｐ型窒化物系化合物半導体膜の作製方法 |
| JP2010045396A (ja) * | 2005-04-05 | 2010-02-25 | Toshiba Corp | 窒化ガリウム系半導体素子の製造方法 |
-
2002
- 2002-09-11 JP JP2002265473A patent/JP2004103930A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006112167A1 (ja) * | 2005-04-01 | 2006-10-26 | Sharp Kabushiki Kaisha | ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置 |
| US8076165B2 (en) | 2005-04-01 | 2011-12-13 | Sharp Kabushiki Kaisha | Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method |
| JP2010045396A (ja) * | 2005-04-05 | 2010-02-25 | Toshiba Corp | 窒化ガリウム系半導体素子の製造方法 |
| JP2008235622A (ja) * | 2007-03-22 | 2008-10-02 | Mitsubishi Chemicals Corp | ｐ型窒化物系化合物半導体膜の作製方法 |
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