JP2004119782A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2004119782A JP2004119782A JP2002282596A JP2002282596A JP2004119782A JP 2004119782 A JP2004119782 A JP 2004119782A JP 2002282596 A JP2002282596 A JP 2002282596A JP 2002282596 A JP2002282596 A JP 2002282596A JP 2004119782 A JP2004119782 A JP 2004119782A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- film
- brush
- cleaning
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 161
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 238000004140 cleaning Methods 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 36
- 230000002093 peripheral effect Effects 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 18
- 230000002209 hydrophobic effect Effects 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002282596A JP2004119782A (ja) | 2002-09-27 | 2002-09-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002282596A JP2004119782A (ja) | 2002-09-27 | 2002-09-27 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004119782A true JP2004119782A (ja) | 2004-04-15 |
| JP2004119782A5 JP2004119782A5 (enExample) | 2005-07-21 |
Family
ID=32276705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002282596A Pending JP2004119782A (ja) | 2002-09-27 | 2002-09-27 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004119782A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015023248A (ja) * | 2013-07-23 | 2015-02-02 | 東京エレクトロン株式会社 | 基板洗浄装置、基板洗浄方法及び記憶媒体 |
| CN105006424A (zh) * | 2015-07-29 | 2015-10-28 | 上海集成电路研发中心有限公司 | 单片式湿法清洗方法 |
| JP2017069264A (ja) * | 2015-09-28 | 2017-04-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板保持装置 |
-
2002
- 2002-09-27 JP JP2002282596A patent/JP2004119782A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015023248A (ja) * | 2013-07-23 | 2015-02-02 | 東京エレクトロン株式会社 | 基板洗浄装置、基板洗浄方法及び記憶媒体 |
| TWI567816B (zh) * | 2013-07-23 | 2017-01-21 | Tokyo Electron Ltd | Substrate cleaning device, substrate cleaning method and memory media |
| KR101760552B1 (ko) * | 2013-07-23 | 2017-07-21 | 도쿄엘렉트론가부시키가이샤 | 기판 세정 장치, 기판 세정 방법 및 기억 매체 |
| US9947556B2 (en) | 2013-07-23 | 2018-04-17 | Tokyo Electron Limited | Substrate cleaning apparatus, substrate cleaning method, and storage medium |
| CN105006424A (zh) * | 2015-07-29 | 2015-10-28 | 上海集成电路研发中心有限公司 | 单片式湿法清洗方法 |
| JP2017069264A (ja) * | 2015-09-28 | 2017-04-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板保持装置 |
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