1357660 九、發明說明： 【發明所屬之技術領域】 本發明係關於在台地型半導體裝置之表面形成作為 電極之金屬膜配線圖案之半導體裝置之製法。更古 之係關於-種藉由均勾的膜厚而可形成金屬膜配線 之半導體裝置之製法。 茶 【先前技術】 在以往習知之台地型半導體裝置中，已知有一種在其 表面形成電極用之金屬膜配線圖案時，藉由電鍍法於所希 望之處形成金屬膜’或是藉由濺鍍法或真空紐法將金屬 膜設於全面，然後，藉由光微影餘進行圖案化而僅於必 要之處殘留金屬膜而藉以形成之方法。 如第3A圖所示，係採用一種形半導體基板21上 設置Ρ形層22，藉此以於要分割成形成有卯接合之半導 體晶圓之切片（pellet)之部分形成凹部，並設置藉由於該 凹部内塗佈Si〇2膜之成膜或玻璃塗料並予以燒結之方式 所形成之鈍化（passivation)膜等之絕緣膜23，然後又以 電鍍法等而於形成有凹部之侧的半導體層22表面及半導 體基板21之背面形成金屬膜，藉此以形成兩電極24、25 之方法。此時，表面侧之電極24不僅在半導體層22表面， 另在絕緣膜23上亦會產生金屬經膜的垂落，而有增加浮游 電容或於台地側面容易產生靜電破壞的問題。為了解決此 種問題’乃採用一種藉由光阻（photoresist)膜於半導體 層22之表面形成開口部，並藉由電鍍法而僅於該開口部内 6 316623修正版 1357660 形成電極24 報）。 之方法（參照例如日本特開平 第94104282號專利申諳案 .100年8月5日修正替換頁 1-232719 號公 由電…所示，與前述之例相同採用-種藉 合而使金屬膜24、25成膜於形成有押接 之光2 之表面及背面的全面，並於之後將未圖示 = 於金屬膜24之表面並進行圖案化，且於要分 °刀片之部分，於金屬膜24、半導體層22及半導體基 二之一部分形成凹部，以形成台地形狀，又藉由於該土凹 内塗佈玻璃塗料等而燒結之方式以形成絕緣膜23之方 法（參照例如曰本特開昭56_58232號公報）。 ^前所述，在形成有凹部之半導體晶圓表面形成電極 時’若於未形成有絶緣膜之半導體層表面直接形成電極 時，由於電極的金屬膜會垂落於絕緣膜上而容易產生浮游 電容的增加或靜電破壞之問題，若欲於全面設置光阻膜而 僅將凹部以外的半導體層上予以開口，且僅於所希望的區 域進行電鍍以形成電極時，則形成有凹部的半導體晶圓將· 易於產生輕曲，而且由於凹部而使表面的凹凸劇烈，因而 難以進行精密的圖案化，而有無法僅在所希望的範圍形成 電極之問題。在形成該凹部並設置絕緣膜之後，藉由光阻 膜之圖案化而僅於所希望之範圍形成金屬膜（電極）之方 法，並不限於電鍍法，即使藉由濺鍍法或真空蒸鍍法成膜 而進行圖案化時亦有同樣的問題。 並且’以使金屬膜成膜於前述半導體晶圓表面之全 面，並於之後形成凹部而形成絶緣膜之方法而言，如欲形 7 316623修正版 1357660 第94104282號專利申請案 100年8月5日修正替換頁 ιυυ千δ乃）9修止瞀換j 成作為咼耐壓用之較厚的絕緣膜，必須要塗佈玻璃塗料並 予以燒結，而由於燒結溫度到達6〇〇至8〇〇〇c左右，因此 必須採用能夠承受燒結時溫度之材料以作為電極的材料， ，無法採用通常的鋁（A1)等，故有在材料上受到限制的問 題。 再者，若藉由電鍍法成膜時，當由於鍍覆液攪拌所產 生的液流而於晶圓中央部與端部側產生鍍覆成長率的參差 不齊，或由於電極形成與晶圓中心部的一點接觸而使鑛覆 f長率因為與電極之距離的不同而產生參差不齊，或是於 *圓月面產生圖案異常等的不良時，由於電流會集中在異 而會產生鑛覆成長率的參差不齊，故亦有晶圓面内 、金屬鍍膜的均句性惡化，且Vf (順向電壓降）特性 性特性降低之問題。 【發明内容】 [發明欲解決之問題] f發明係有鑑於此種狀況而研創者’其 種台地型半導體裝置之製法，用以製造台地型半導體^ 置’而於半導體晶圓作為分割成切片之 +導縣表面，而可以均勻的厚度僅於未形 部分設置金屬膜以形成電極。 、’’、之 [解決問題之方案] 本發明之半導體裝置之製法之特徵 晶圓形成具有至少“固押接合之 二:⑴於半導體 之周圍以形成凹部與台地部；（c) Μ刻前述元件 )於别述凹部之表面形成 316623修正版 8 1357660 第94104282號專利申讀宏 100年8月5曰修正替換頁' 锅缝晅.,j、 匕二月3曰修正替換1 絕緣腺Η於前述半導體晶圓之表面的半導體層及前述 :=二面形成金屬膜;(0施以熱處理並接著將高壓 ^ 半導體晶圓表面，藉此以選擇性去除前述絕 ，^的金屬膜；以及⑴切斷前述凹部之下的前述半導 腹ΒΘ圓。 A述金屬臈的形成係藉由減鍍法或真空蒸鑛法進 仃，即可形成非常均勻厚度的金屬膜。 前述高壓水的噴射係藉由以G.5至1.5Mpa的壓力而進 =根據金屬膜與半導體層之密著力及金屬膜與絕緣膜之 密者力的差，僅將絕緣膜上的金屬膜予以剝離並去除，且 不會剝離半導體層上的金屬膜而使其殘存，故甚為理想。 [發明之功效] “ 依據本發明，絕緣膜上的金屬膜並非藉由圖案化並予 =钱刻而加以去除，而是藉由對全面噴射高壓水，以該衝 擊力而僅將密著力較弱的絕緣膜上之金屬膜予以剝離，因 此即使由於凹部的形成而使晶圓表面的凹凸劇烈，亦可精 氆度極佳地選擇性去除金屬膜，並且在無絕緣膜之半導體 層表面的金屬膜並不會有任何剝離，而可直接利用作為電 極’故可僅在半導體層表面形成精密度極佳而且可以均勻 的膜厚形成電極。並且，藉由以濺鍍法或真空蒸鍍法形成 金屬膜，可使電極膜之厚度極為均勻，且可獲得Vp特性 等、電性特性等均極為良好的半導體裝置。 【實施方式】 [發明之實施形態] 9 316623修正版 1357660 第94104282號專利申請案 100年8月5日修正替換頁[Technical Field] The present invention relates to a method of manufacturing a semiconductor device in which a metal film wiring pattern as an electrode is formed on a surface of a mesa-type semiconductor device. A more conventional method for producing a semiconductor device in which a metal film wiring can be formed by a uniform film thickness. Tea [Prior Art] In the conventional mesa-type semiconductor device, when a metal film wiring pattern for electrodes is formed on the surface thereof, a metal film is formed by a plating method at a desired point or by sputtering The plating method or the vacuum method is a method in which the metal film is provided in a comprehensive manner, and then the metal film is left by patterning by photolithography, and the metal film is left only where necessary. As shown in FIG. 3A, a germanium-shaped semiconductor substrate 21 is provided with a dome-shaped layer 22, whereby a recess is formed in a portion to be divided into a pellet in which a germanium-bonded semiconductor wafer is formed, and is provided by An insulating film 23 such as a passivation film formed by coating a film of a Si〇2 film or a glass coating material and sintering the same in the concave portion, and then a semiconductor layer on the side where the concave portion is formed by plating or the like A method of forming the two electrodes 24 and 25 by forming a metal film on the surface of the 22 surface and the back surface of the semiconductor substrate 21. At this time, the electrode 24 on the surface side is not only on the surface of the semiconductor layer 22, but also on the insulating film 23, the metal film is drooped, and there is a problem that the floating capacitance is increased or electrostatic breakdown is likely to occur on the side surface of the mesa. In order to solve such a problem, an opening portion is formed on the surface of the semiconductor layer 22 by a photoresist film, and the electrode 24 is formed only in the opening portion by the electroplating method 6 316623 revision 1357660. The method (refer to, for example, Japanese Patent Application Laid-Open No. 94104282, Patent Application No. Hei. No. Hei. 24, 25 is formed on the surface and the back surface of the light 2 to be adhered, and is then patterned on the surface of the metal film 24, and is patterned in the part of the blade. A portion in which the film 24, the semiconductor layer 22, and the semiconductor substrate are partially formed into a concave portion to form a mesa shape, and the insulating film 23 is formed by sintering the glass coating or the like by the coating (see, for example, 曰本特In the case of forming an electrode on the surface of a semiconductor wafer having a recessed portion, as described above, when an electrode is directly formed on the surface of a semiconductor layer on which an insulating film is not formed, the metal film of the electrode may hang down on the insulating film. It is easy to cause an increase in floating capacitance or electrostatic breakdown. If the photoresist film is to be provided in its entirety, only the semiconductor layer other than the recess is opened, and plating is performed only in a desired region. When the electrode is formed, the semiconductor wafer in which the concave portion is formed is likely to be slightly curved, and the unevenness of the surface is severed by the concave portion, so that it is difficult to perform precise patterning, and there is a problem that the electrode cannot be formed only in a desired range. After the recess is formed and the insulating film is formed, the method of forming the metal film (electrode) only by the desired range by patterning of the photoresist film is not limited to the plating method, even by sputtering or vacuum evaporation. The same problem arises when the plating method is performed to form a film, and the method of forming an insulating film by forming a metal film on the surface of the semiconductor wafer and forming a concave portion later is desired. 316623 Rev. 1357660 Patent Application No. 94104282 Revised on August 5, 100. Replacement Page υυ υυ δ δ) 9 修 瞀 瞀 成 成 成 成 成 成 成 成 较 较 较 较 较 较 较 较 较 较 较 较 较 较 较 较Sintering, and since the sintering temperature reaches about 6 〇〇 to 8 〇〇〇 c, it is necessary to use a material capable of withstanding the temperature at the time of sintering as a material of the electrode, and it is not possible to adopt the usual Aluminum (A1) and the like have problems in terms of materials. Further, when the film is formed by the plating method, the plating growth rate is uneven at the center portion and the end portion of the wafer due to the liquid flow generated by the stirring of the plating solution, or the electrode formation and the wafer are formed. At the point of contact with the center, the length of the ore cover f is uneven due to the difference in distance from the electrode, or when the pattern is abnormal on the *moon surface, the current will concentrate and the ore will be produced. The coverage growth rate is uneven, so there is also a problem that the uniformity of the wafer surface and the metal coating is deteriorated, and the characteristic characteristics of Vf (forward voltage drop) are lowered. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] In the invention, in view of such a situation, the researcher has developed a method for manufacturing a semiconductor device of the above-mentioned type, which is used for manufacturing a mesa-type semiconductor device and is divided into slices by a semiconductor wafer. The surface of the cathode is +, and a uniform thickness can be provided only for the metal film to form the electrode. </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> The method of fabricating the semiconductor device of the present invention is characterized in that the wafer is formed to have at least "secondary bonding: (1) around the semiconductor to form a recess and a mesa; The component is formed on the surface of the recessed surface 316623 Rev. 8 1357660 Patent No. 94104282 Application for the macro 100 years August 5 曰 Correction replacement page 'Pan 晅 晅., j, 匕 February 3 曰 Correction replacement 1 Insulation a semiconductor layer on a surface of the semiconductor wafer and a metal film formed on the surface of the semiconductor wafer; (0) a heat treatment and then a high-voltage semiconductor wafer surface, thereby selectively removing the metal film; and (1) The semi-concave abdomen circle below the concave portion is cut. The formation of the metal crucible is formed by a subtractive plating method or a vacuum distillation method to form a metal film having a very uniform thickness. By the pressure of G.5 to 1.5 MPa, according to the difference between the adhesion between the metal film and the semiconductor layer and the adhesion between the metal film and the insulating film, only the metal film on the insulating film is peeled off and removed, and Will not peel off the semiconductor layer The metal film remains, so it is ideal. [Effects of the Invention] According to the present invention, the metal film on the insulating film is not removed by patterning and etching, but by a high-pressure injection Water is used to peel only the metal film on the insulating film having a weak adhesion force by the impact force. Therefore, even if the unevenness of the surface of the wafer is severe due to the formation of the concave portion, the metal can be selectively removed with excellent precision. The film, and the metal film on the surface of the semiconductor layer without the insulating film, does not have any peeling, and can be directly used as the electrode, so that the electrode can be formed only on the surface of the semiconductor layer with excellent precision and uniform film thickness. By forming a metal film by a sputtering method or a vacuum deposition method, the thickness of the electrode film can be made extremely uniform, and a semiconductor device having excellent Vp characteristics and the like and excellent electrical properties can be obtained. [Embodiment] [Invention] Embodiments] 9 316623 Revision 1357660 Patent Application No. 94104282 Revision of the replacement page of August 5, 100
. 丁 〇 /3 J Q ，、次’兹參照圖式說明本發明之半導體裝置之製法。 =據本發明之半導體裝置之製法，係如第以至1F圖之- =態之製程說明圖所示，其特徵為於半導體晶圓！藉 ，成至少一個pn接合而形成元件並藉由將該元件之周 =以餘刻以形成凹部8。㈣’於凹部8之表面形成絕 緣膜5,並藉由濺鍍法或真空蒸鑛法而於半導體晶圓u 面之P形半導體層4及絕緣膜5之表面形成金屬膜6a。之 後’藉由施以熱處理以使p形半導體層4與金屬膜心之密 者性提昇，並藉由將高愿水喷射於半導體晶圓k表面， 以由該衝擊力僅將絕緣膜5上的金屬料以選擇性地去 除。然後，藉由將凹部8之下之半導體晶圓i予以切斷， 以形成台地型形狀之半導體裝置之晶片。以下具體詳述之。 百先，如第1A圖所示，藉由於半導體晶圓i形成至 少-個Pn接合以形成元件。第1AJL㈣示之例係為台 地型之二極體之例，其係^形半導體層3及^形半導體 層4磊晶成長於例如由矽所構成之n+形半導體基板2表 面’以形成pn接合，並形成二極體。然而’並不以此例為 限’亦可藉由直接擴散等將雜質導入半導體基板2以形成 pn接合之方式而形成二極體，而且’並不以二極體為限， 亦可是電晶體或閉流體（thyrist〇r)等形成為台地型形狀 之半導體裝置。並且，半導體基板亦不以石夕為限，亦^ GaAs等的化合物半導體。 其次’如第1B圖所示，於元件的周圍，藉由從 體晶圓1將要分割成各切片之部分予以蝕刻以形成凹部 316623修正版 丄357660 第941〇4282號專利申請案 100年8月5日修正替換頁 。姓刻係將例如光阻膜設置於？形半導 由料《彡技術使要⑽i的部分開口之方式以形 /、.、9’並從由遮罩9露出的p形半導體層4的表面， 糟由例如氟酸與硝酸的混合液等的蝕刻液而蝕刻到超過 Pn接合”分’並於之後將鮮9錯。其結果，p形半 導體層4即成為突出於台地形狀的構造。 其次’如第1C圖所示，於凹部8的表面形成絕緣膜& 此絕緣膜5係將使玻璃粉末懸濁於有機溶劑之玻璃塗料予 =塗佈於凹部内，並以6〇〇至8〇〇它程度進行6〇至卯分 &度的燒結處理而形成。並且，將用以形成前述凹部之際 的遮罩9直接留下’藉由例如CVD法等而使Si02膜等成 膜於全面，之後亦可將遮罩9與凹部以外的si〇2膜一同去 除，藉以形成絕緣膜5。 之後，如第1D圖所示，藉由濺鍍法或真空蒸鍍法以 於半導體晶圓1表面之p形半導體層4及絕緣膜5之表面 形成金屬膜6a。例如，以A1或Ag作為靶材，藉由通常的 濺鍍法，使A1或Ag從靶材飛散，而使金屬膜6a成膜為 〇·5至3//m左右的厚度於半導體晶圓1表面的全面。亦可 不藉由錢鍍法而藉由以真空濺鍍法亦可同樣形成。之後， 將半導體晶圓1反轉而同樣使金屬膜成膜為〇 5至m 程度的厚度於半導體基板2的背面，以形成背侧的電極7。 另外’半導體基板2背面的電極7亦可不藉由濺鍍法或真 空蒸鑛法而改以電鍍法形成。 之後’進行熱處理。藉由施行熱處理即可將p形半導 11 316623修正版 Ϊ357660 _ 第94104282號專利申請案 * 100年8月5日修正替換苜 體層4與金屬膜6a之密著性提昇。接著並藉由將高壓水噴 射於半導體晶圓表面’如第1E圖所示’即可將絕緣膜5 上的金屬膜6a予以選擇性地去除。具體而言，藉由於真空 中進行400至500°C左右、30至9〇分左右的熱處理，使^ 形半導體層4與金屬膜以的接合面矽化物化，以使密著性 提昇。另一方面，由於絕緣膜5上的金屬膜6a並不會與絕 緣膜5與金屬膜6a產生反應，因此即使施以熱處理亦不會 提昇密著性。 ^ 之後，將半導體晶圓1設定於第2圖所示之高壓水喷 射裝置之晶圓吸附基台（stage)lljL。高壓水喷射裝㈣ 具有未圖示之旋轉機構，並以向例如第2圖所示箭頭A所 示方向旋轉之方式設置晶圓制基台^，且於該晶圓吸附 基台11之上方，設有將前端部朝向晶圓吸附基台u之表 面之高壓喷嘴12,並以可藉由高壓將未圖示之水源所供給 之水予以喷射之方式而構成。該高壓嘴嘴12係具有可向未 圖不之水平方向移動之移動機構，俾可於水平面内移動， 並以可將高壓水喷射於晶圓吸附基台11±之全面 而構成。在晶圓吸附基台丨丨上漶i 士 m 工 n2喷嘴13。 1上復-有用以喷附乾燥氮氣的 在此種裝置之晶圓吸附某AL w “ 上，將形成有凹部8 之側作為表面而將半導體晶圓】予以 基A I丨斿M Θ 固疋，並使晶圓吸附 丞口 11鉍轉，並且一面使高壓喷 —面徹底將高壓水嘴射於半導體 2二=内移動’ 該衝擊力將金屬膜6a之密著性不良圓的1表八面的全面’並以 的4分，亦即絕緣膜5 316623修正版 12 1357660 第94104282號專利申請案 ' | 100年8月5日修正替換頁 上的金屬膜6a予以選擇性地去除，而僅於p形半導體層4 的表面形成電極6。此時將高壓水的壓力設定為〇 5至 1.5Mpa的範圍，藉此即可將絕緣膜5上的金屬膜6a予以 選擇性地剝離，而且在p形半導體層4上的金屬膜6a不會 有任何異常情形，即可選擇性將金屬膜6a予以剝離❶亦 即’本發明人經過不斷研究檢討將金屬膜6a予以選擇性剝 離的結果，有鑑於當壓力過小時無法將絕緣膜5上的金屬 獏6a充分地剝離’而且，壓力過強時又有受到半導體晶圓 的破裂、破損等損害，或產生p形半導體層4與傘屬膜以 之剝離等，因而藉由以上述壓力的範圍喷射高壓水，即可 選擇性地僅將絕緣膜5上的金屬膜6a予以剝離，且於p 形半導體層4上的金屬膜6a不會有任何異常產生。在選擇 性地將金屬膜6a去除之後，藉由純水予以洗淨，並從n2 噴嘴13喷附&氣體而使半導體晶圓i乾燥。 之後，藉由將凹部之下的半導體晶圓j切斷，如第if 圖所示，分割成台地型形狀之半導體裝置之各切片，可獲 得本發明之半導體裝置。而該切斷一般係以切割機（4^^) 進行切斷，然而亦可以其他方法進行切斷。 依據本發明，不必應用光微影製程，即可將形成於表 面全面之金屬膜予以選擇性地剝離去除，並可僅在必要的 持將金屬膜形成為電極。因此，即使由於設成台地型而 於半導體晶圓表面形成凹部而使表面的凹凸劇烈，或由於 由玻璃等所構成之絕緣膜燒結而使半導體晶圓產生勉曲，、 以致無法於晶圓表面形成細緻的光阻膜圖案時，亦可非常Ding 〇 /3 J Q , </ RTI> The method of manufacturing the semiconductor device of the present invention will be described with reference to the drawings. According to the manufacturing method of the semiconductor device of the present invention, as shown in the process diagram of the -= state of the first to the 1F, it is characterized by a semiconductor wafer! By forming at least one pn junction, the component is formed and the recess 8 is formed by the circumference of the component. (4) The insulating film 5 is formed on the surface of the concave portion 8, and the metal film 6a is formed on the surface of the P-shaped semiconductor layer 4 and the insulating film 5 on the surface of the semiconductor wafer u by sputtering or vacuum evaporation. Then, by applying heat treatment to enhance the denseness of the p-type semiconductor layer 4 and the metal film core, and by spraying high-power water onto the surface of the semiconductor wafer k, only the insulating film 5 is applied by the impact force. The metal material is selectively removed. Then, the semiconductor wafer i under the recess 8 is cut to form a wafer of a mesa-shaped semiconductor device. The details are detailed below. The first, as shown in Fig. 1A, is formed by the semiconductor wafer i forming at least one Pn junction. The example shown in the first AJL (four) is an example of a mesa-type diode in which the semiconductor layer 3 and the semiconductor layer 4 are epitaxially grown on the surface of the n + -type semiconductor substrate 2 composed of germanium to form a pn junction. And form a diode. However, 'not limited to this example' may form a diode by introducing impurities into the semiconductor substrate 2 by direct diffusion or the like to form a pn junction, and 'not limited to a diode, or may be a transistor. Or a liquid crystal (thyrist〇r) or the like formed into a mesa-type semiconductor device. Further, the semiconductor substrate is not limited to Shi Xi, and is also a compound semiconductor such as GaAs. Next, as shown in FIG. 1B, the portion to be divided into the respective slices is etched to form the concave portion 316623 around the device to form the concave portion 316623. 修正 357660 Patent Application No. 941〇4282, August 2014 Correct the replacement page on the 5th. Is the last name set such as a photoresist film? The semi-conductive material is made of a part of the opening of the (10)i in the form of a shape, /, 9' and from the surface of the p-type semiconductor layer 4 exposed by the mask 9, and a mixture of, for example, hydrofluoric acid and nitric acid. The etchant is etched to a level exceeding the Pn junction "minute" and then 9 is fresh. As a result, the p-type semiconductor layer 4 has a structure that protrudes from the mesa shape. Next, as shown in FIG. 1C, in the recess 8 The surface is formed with an insulating film & this insulating film 5 is a glass coating material which suspends the glass powder in an organic solvent to be coated in the concave portion, and is subjected to 6 to 8 minutes to 6 degrees to 8 minutes. The mask 9 for forming the concave portion is directly left. The SiO 2 film or the like is formed into a film by, for example, a CVD method, and the mask 9 can be formed later. The Si〇2 film other than the concave portion is removed together to form the insulating film 5. Thereafter, as shown in Fig. 1D, the p-type semiconductor layer 4 and the insulating film are deposited on the surface of the semiconductor wafer 1 by sputtering or vacuum evaporation. The surface of the film 5 is formed with a metal film 6a. For example, using A1 or Ag as a target, by ordinary splashing In the method, A1 or Ag is scattered from the target, and the metal film 6a is formed into a film having a thickness of about 5 to 3//m on the surface of the semiconductor wafer 1. It is also possible to The vacuum sputtering method can also be formed in the same manner. Thereafter, the semiconductor wafer 1 is reversed and the metal film is formed into a film having a thickness of about 5 to m on the back surface of the semiconductor substrate 2 to form the electrode 7 on the back side. The electrode 7 on the back surface of the semiconductor substrate 2 may be formed by electroplating instead of sputtering or vacuum evaporation. After that, heat treatment is performed. The p-shaped semi-conductor 11 316623 can be modified by heat treatment Ϊ 357660 _ 94104282 Patent Application* Revised on August 5, 100, to improve the adhesion of the replacement body layer 4 to the metal film 6a. Then, by spraying high-pressure water onto the surface of the semiconductor wafer, as shown in FIG. 1E, The metal film 6a on the insulating film 5 is selectively removed. Specifically, the semiconductor layer 4 and the metal film are formed by heat treatment in a vacuum of about 400 to 500 ° C and about 30 to 9 Torr. The joint surface is mashed to enhance the adhesion. The other side Since the metal film 6a on the insulating film 5 does not react with the insulating film 5 and the metal film 6a, the adhesion is not improved even by heat treatment. ^ Then, the semiconductor wafer 1 is set to the second. The wafer adsorption stage of the high-pressure water jet device shown in the figure is a stage lljL. The high-pressure water jet device (4) has a rotating mechanism (not shown) and is arranged to rotate in a direction indicated by an arrow A shown in Fig. 2, for example. a wafer substrate ^, and a high-pressure nozzle 12 having a front end portion facing the surface of the wafer adsorption substrate u, and a water source (not shown) capable of being pressed by a high voltage, above the wafer adsorption substrate 11 The supplied water is sprayed. The high pressure nozzle 12 has a moving mechanism movable in a horizontal direction which is not shown, and is movable in a horizontal plane and is formed by spraying high pressure water onto the wafer adsorption base 11±. On the wafer adsorption abutment, the ni m m nozzle n13. 1Upper--use of a dry nitrogen gas to adsorb a certain AL w on the wafer of such a device, and the side of the recess 8 is formed as a surface to fix the semiconductor wafer to the base AI?M? And the wafer adsorption port 11 is turned, and the high pressure spray surface is completely irradiated to the semiconductor 2 and the inner surface is moved by the high pressure spray surface. The impact force causes the metal film 6a to have a poor adhesion. The comprehensive 'with 4 points, that is, the insulating film 5 316623 revision 12 1357660 Patent Application No. 94104282' | The metal film 6a on the replacement page of August 5, 100 is selectively removed, but only The surface of the p-type semiconductor layer 4 is formed with an electrode 6. At this time, the pressure of the high-pressure water is set to a range of 〇5 to 1.5 MPa, whereby the metal film 6a on the insulating film 5 can be selectively peeled off, and at p The metal film 6a on the semiconductor layer 4 does not have any abnormality, and the metal film 6a can be selectively peeled off, that is, the inventors have continuously studied and reviewed the result of selectively peeling off the metal film 6a. When the pressure is too small, the gold on the insulating film 5 cannot be used.貘6a is sufficiently peeled off] Moreover, when the pressure is too strong, damage or breakage of the semiconductor wafer is caused, or the p-type semiconductor layer 4 and the umbrella film are peeled off, etc., and thus are sprayed by the above pressure range. High-pressure water can selectively peel only the metal film 6a on the insulating film 5, and the metal film 6a on the p-type semiconductor layer 4 does not have any abnormality. After selectively removing the metal film 6a And cleaning the semiconductor wafer i by spraying the & gas from the n2 nozzle 13. Thereafter, by cutting the semiconductor wafer j under the recess, as shown in the figure The semiconductor device of the present invention can be obtained by dividing each slice of the semiconductor device into a mesa shape. The cutting is generally performed by a cutter (4^^), but may be cut by other methods. The metal film formed on the entire surface can be selectively stripped and removed without applying a photolithography process, and the metal film can be formed as an electrode only when necessary. Therefore, even if it is set as a mesa type, the semiconductor is used. A concave portion is formed on the surface of the wafer to make the surface unevenness or the semiconductor wafer is warped due to sintering of an insulating film made of glass or the like, so that a fine photoresist film pattern cannot be formed on the surface of the wafer. very much
1Q 316623修正版 丄妁7660 第94104282號專利申請案 100年8月5日修正替換百 |川》平8月5日修正替換1 精確地將全面成膜之金屬膜的不需要部分予以選擇性地去 ,、並且由於不需要光微影製程，因此不須再有光微影 製程上所需的製程（光阻塗佈一曝光一顯影一烘烤—金屬 蝕刻-光阻去除）的程序，故可以非常少的製程而以正確 的圖案形成電極，且非常廉價地製造。再者，由於金屬膜 的形成係藉由濺鍍法或真空蒸鍍法而成膜，故可以非常均 勻的膜科以形成金屬膜。其結果，亦不會再有例如金屬 膜厚不均勻時而使電極剝離或形成密著不良，或易於產生 壓降“良等之問題’而可獲得非常高特性的 【圖式簡單說明】 第1A至if圖為表示依據本發明之製 之貫施形態 ^圖為表示用於使第㈣之高壓水料之製程之 衣罝的一例圖。 第3A及第3B圖為表示習知之台地 圖。 土卞导體裝置之例 【主要元件符號說明】 半導體晶圓 ’半導體基板 n形半導體層 P形半導體層 1 絕緣膜 > 電極 316623修正版 14 第94104282號專利申請案 100年8月5日修正替換頁 金屬膜 電極 凹部 遮罩 晶圓吸附基台 高壓喷嘴 n2喷嘴 η形半導體基板 半導體層 絕緣膜 電極（金屬膜） 15 316623修正版1Q 316623 Revised Edition 丄妁7660 Patent Application No. 94104282, Revised October 5, 100, Revised Replacement Bai | Chuan Ping, August 5, Revision Replacement 1 Selectively, the unnecessary portion of the fully film-formed metal film is selectively Go, and because there is no need for a photolithography process, there is no need to have a process required for photolithography (photoresist coating-exposure-development-baking-metal etching-resistive removal), so The electrodes can be formed in the correct pattern with very few processes and are very inexpensive to manufacture. Further, since the formation of the metal film is formed by a sputtering method or a vacuum deposition method, a film film can be formed in a very uniform film form. As a result, for example, when the thickness of the metal film is not uniform, the electrode is peeled off or the adhesion is poor, or the pressure drop is "prone to a problem", and a very high characteristic can be obtained. 1A to FIG. FIG. 3A and FIG. 3B are diagrams showing a conventional table of drawings for showing a process for making the high-pressure water material of the fourth item. Example of a soil conductor device [Description of main components] Semiconductor wafer 'semiconductor substrate n-type semiconductor layer P-type semiconductor layer 1 insulating film> Electrode 316623 revision 14 Patent application No. 94104282 revised August 5, 100 Replacement page metal film electrode recessed mask wafer adsorption abutment high-pressure nozzle n2 nozzle n-type semiconductor substrate semiconductor layer insulating film electrode (metal film) 15 316623 revision