JP2004119007A - 高密度再生専用光ディスク - Google Patents

高密度再生専用光ディスク Download PDF

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JP2004119007A
JP2004119007A JP2003336174A JP2003336174A JP2004119007A JP 2004119007 A JP2004119007 A JP 2004119007A JP 2003336174 A JP2003336174 A JP 2003336174A JP 2003336174 A JP2003336174 A JP 2003336174A JP 2004119007 A JP2004119007 A JP 2004119007A
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optical disk
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In-Oh Hwang
黄　仁　吾
In-Sik Park
朴　仁　植
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Samsung Electronics Co Ltd
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Abstract

【課題】　高密度光ディスクを提供する。
【解決手段】　ピットが形成された基板と、誘電体材料と金属粒子との混合物よりなって超解像近接場構造を有する１つ以上のマスク層と、を含む高密度再生専用光ディスクである。これにより、レーザーダイオードの短波長化や対物レンズの開口率を高めずに大容量及び高密度化を達成しうる。
【選択図】　　　図２

Description

　本発明は光ディスクに係り、特にディスク内に超解像近接場構造（Ｓｕｐｅｒ−Ｒｅｓｏｌｕｔｉｏｎ　Ｎｅａｒ−Ｆｉｅｌｄ　Ｓｔｒｕｃｔｕｒｅ：ｓｕｐｅｒ−ＲＥＮＳ）を導入することによってレーザービームの分解能以下サイズのマークを再生できる高密度再生専用光ディスクに関する。
　光ディスクは既存の磁気記録媒体に比べて記録単位当り必要な記録面積が非常に狭いために高密度記録媒体として多用されている。このような光ディスクはその機能によって、記録された情報を再生だけ行う再生専用型（Ｒｅａｄ　Ｏｎｌｙ　Ｍｅｍｏｒｙ；ＲＯＭ）と１回に限って記録可能な追記型（ＷＯＲＭ）及び記録後に消去及び書換え可能な消去可能型（Ｅｒａｓａｂｌｅ）とに区分される。
　追記型光ディスクの一例として、ＣＤ−Ｒがある。ＣＤ−Ｒは、７８０ｎｍの記録レーザーをシアニン、フタロシアニンなどの有機色素よりなる記録層に照射して色素層の分解、基板及び反射膜の変形などを誘発し、１ｍＷ以下の低いパワーで記録された信号を読出す光記録媒体であって、約６５０ＭＢの記録容量でデータ、音楽、画像など多様な形態のデータを記録／再生する用途として広く使われている。
　しかし、ＣＤ−ＲまたはＣＤ−ＲＷのように７８０ｎｍの記録波長を用いる光記録媒体は、その容量が動画像を貯蔵するには多少不足し、かつ次第に複雑になるマルチメディア環境下における使用には多くの問題点を有している。
　このような問題点を克服するために開発されたのが６３０−６８０ｎｍの短波長レーザーを使用して断面２．７ないし４．７ＧＢの容量を実現したのがＤＶＤであり、ＤＶＤも再生専用（ＤＶＤ）、追記型（ＤＶＤ−Ｒ）及び消去可能型（ＤＶＤ−ＲＡＭ、ＤＶＤ＋ＲＷ、ＤＶＤ−ＲＷ）に分類されうる。ＤＶＤ−Ｒは記録レーザーを記録層に照射することによって記録層の変形及び分解を誘発し、ＤＶＤ−ＲＡＭ、ＤＶＤ−ＲＷは相変化による光学的特性の変化を誘発してデータを記録する。特に、有機色素を使用したＤＶＤ−ＲはＤＶＤ−ＲＯＭとの互換性、価格及び容量面で他の媒体に比べて相対的に有利な位置にあるために関心が集中している。
　このように最近登場している多数のメディアにおける最大の問題点は容量であり、この容量の増大のための色々な方法が試みられている。光ディスクの容量は限定された面積内に正確に再生可能な小さな形態のピットをいかほど多く取り入れ、またこのようなピットを正確に再生できるレーザービームの特性に優先的に依存している。レーザーダイオードから発生する光はピックアップの対物レンズを通じて集束しても回折影響のために無限に小さな一点としては集束されず、有限幅を有するビームとして形成され、これを回折限界と称する。一般の光ディスクの場合には光源の波長がλであり、対物レンズの開口数がＮＡ（Ｎｕｍｅｒｉｃａｌ　Ａｐｅｒｔｕｒｅ）である時、λ／４ＮＡが再生分解能の限界となる。したがって、光源の波長が短くなったり、対物レンズの開口数が大きくなるほど記録容量が増大する。しかし、現在のレーザー技術としては短波長のレーザーを提供するのに限界があって、開口数の大きい対物レンズを製造するにはコスト高となる限界点があり、また対物レンズの開口数が大きくなるほどピックアップとディスク間の距離が非常に短くなるためにピックアップとディスクとの衝突によりディスク表面が損傷されることによってデータ損失の恐れが大きくなる。
　最近、このような再生分解能の限界を克服するために超解像近接場構造の光ディスクが研究されているが、このような構造の光ディスクには酸化銀マスク層が主に使われる。図１にはこのように酸化銀マスク層を備えた光ディスクを概略的に示した。このような構造での記録及び再生過程を説明すれば、記録時に酸化銀が微小銀粒子と酸素とに分解され、再生時に前記微小銀粒子の表面にプラズモンが形成され、このような表面プラズモンにより近接場再生（Ｎｅａｒ　Ｆｉｅｌｄ　Ｒｅａｄｉｎｇ：ＮＦＲ）が可能となり、前記回折限界を克服して非常に小さな記録マークを再生可能になる。
　しかし、酸化銀などの酸化金属マスク層を使用する光記録媒体はＷＯＲＭタイプでは使用できるが、記録過程により酸化銀が微小銀粒子と酸素とに分解され、これは超解像効果を発生させる金属粒子が記録過程で発生するということを意味するので、このような記録過程なしにピット状に基板上に情報が記入されている再生専用光ディスク（ＲＯＭ）には酸化銀マスク層を適用できないという問題点がある。
米国特許第６３３５９０８号明細書
　したがって、本発明が解決しようとする技術的課題は、レーザーダイオードの短波長化や対物レンズの開口率を高めずに大容量及び高密度化を達成でき、再生専用光ディスクに適用できる高密度光ディスクを提供するところにある。
　前記目的を達成するために本発明は、ピットが形成されている基板と、誘電体材料と金属粒子との混合物よりなって超解像近接場構造を有する１つ以上のマスク層と、を含む高密度再生専用光ディスクを提供する。
　本発明の一実施例によれば、前記誘電体材料は金属の酸化物、窒化物、硫黄物、フッ化物またはこれらの混合物であることが望ましい。
　また、前記誘電体材料はＺｎＳ−ＳｉＯ２であることが望ましい。
　本発明の他の実施例によれば、前記金属粒子は金、白金、ロジウム、パラジウムまたはこれらの混合物であることが望ましい。
　本発明の望ましい実施例によれば、前記金属粒子は白金であることが望ましい。また、本発明に係る光ディスクは１つ以上の反射層をさらに含むことが望ましい。
　本発明の望ましい実施例によれば、前記マスク層の上下側の少なくとも１面に誘電体層をさらに含みうる。
　本発明に係る高密度再生専用光ディスクはレーザーダイオードの短波長化や対物レンズの開口率を高めずに大容量及び高密度化を達成しうる。
　以下、添付した図面を参照しつつ本発明をさらに詳細に説明する。
　ピット１７が形成されている透明基板１０上にマスク層１１が形成されている本発明の一実施例による光ディスクを図２に示した。基板１０は記録レーザーの波長で高い透明度を有し、優秀な耐衝撃性、耐熱性、耐環境性などを有する材料として射出成形のような通常の基板製造方法により成形可能な材料のうち選択される。具体例として、ポリカーボネート、ポリメチルメタアクリレート、エポキシ、ポリエステル、非晶質ポリオレフィンなどがある。
　本発明では既存の酸化銀膜の代りに誘電体材料に微小金属粒子を分散させた形態のマスク層１１が提供され、前記微小金属粒子はレーザービームより小さい。このように本発明では表面プラズモンの源泉が微小金属粒子の形に存在するために再生専用ディスクに使用できる。
　このようなマスク層１１はセルフフォーカシング効果を果たし、近接場光に対する開口として作用し、６８０ｎｍのレーザー光源下で１００ｎｍ以下の微細なマークの再生を可能にする。
　前記マスク層に使われる誘電体は金属の酸化物、窒化物、硫黄物、フッ化物またはこれらの混合物であり、例えば、ＳｉＯ２、Ａｌ２Ｏ３、Ｓｉ３Ｎ４、ＳｉＮ、ＺｎＳ、ＭｇＦ２などが使われうる。マスク層に分散される金属材料としては、金、白金、ロジウム、パラジウムなどの貴金属材料を使用することが望ましい。この際、誘電体材料及び金属材料は相互化学的に反応しないために微小金属粒子がその形態を保つべきであるが、銀粒子を使用する時には誘電体材料のうちサルファと反応して、経時的に特性が低下する恐れがあるので望ましくない。
　一方、前記マスク層はスパッタリングにより成膜されうるが、スパッタリングターゲット自体が前記誘電体材料と微小サイズの金属粒子との混合物であるためにスパッタリング法によりレーザービームサイズ以下の微小金属粒子を分散させうる。
　図２において、本発明に係る光ディスクは反射層（図示せず）をさらに含み、反射層は記録または再生時に高反射率を得るためのものであって、よく変形されないように熱伝導率及び反射率の大きい金属で形成することが望ましい。したがって、Ａｕ、Ａｌ、Ｃｕ、Ｃｒ、Ａｇ、Ｔｉ、Ｐｄ、Ｎｉ、Ｚｎ、Ｍｇ及びこれらの合金で構成された群から選択された金属よりなり、一般に真空蒸着、電子ビームまたはスパッタリングなどの一般の方法により５０ないし１５０ｎｍの厚さに形成される。十分な反射率及び信頼性を確保するためには６０ないし１２０ｎｍが望ましい。
　本発明に係る光ディスクは、マスク層と基板間、マスク層と反射層間または両面に誘電体層をさらに含むこともできる。マスク層と基板間の誘電体層は熱による基板の損傷を防止し、マスク層と反射層間の誘電体層は拡散防止層としての機能を行う。
　また、本発明に係る光ディスクは、保護層をさらに含むことができ、このような保護層は光ディスクの他の構成層を保護する作用を行う。このような保護層は通常の方法によって形成されうるが、例えば、衝撃強度が大きく、透明でかつ紫外線により硬化可能な物質であって、エポキシまたはアクリレート系紫外線硬化性樹脂を反射膜などの上にスピンコーティングした後、紫外線で硬化させる方法を用いて形成する。
　以下、本発明の望ましい実施例に基づいて本発明をさらに具体的に説明するが、これに本発明が制限されることではない。
　ＤＶＤのような０．７４μｍのトラックピッチを有し、ピットが形成されている０．６ｍｍ厚さのポリカーボネート（ＰＣ）基板上に、ＺｎＳ−ＳｉＯ２ターゲットを４００Ｗに、Ｐｔターゲットを１６０Ｗにコスパッタリングして５０ｎｍ厚さの混合薄膜を形成した。この際、Ａｒは２０ｓｃｃｍに供給し、蒸着圧力は１．５ｍＴｏｒｒであり、前記薄膜内のＺｎＳ−ＳｉＯ２とＰｔとの体積比は８０：２０であった。
　０．７４μｍのトラックピッチを有し、ピットが形成されている０．６ｍｍ厚さのＰＣ基板上に誘電体層としてＺｎＳ−ＳｉＯ２、マスク層としてＺｎＳ−ＳｉＯ２＋Ｐｔをスパッタリングで成膜した後、Ａｇを１００ｎｍ厚さにスパッタリングして反射膜を製造した。次いで、光硬化性樹脂保護層をスピンコーティング法で形成した後、４０℃の真空オーブンで１２時間乾燥させて光ディスクを完成した。この際、マスク層としてＺｎＳ−ＳｉＯ２とＰｔとの混合層はＺｎＳ−ＳｉＯ２ターゲットを４００Ｗに、Ｐｔターゲットを１６０Ｗにコスパッタリングして５０ｎｍ厚さの混合薄膜を形成したが、Ａｒは２０ｓｃｃｍに供給し、蒸着圧力は１．５ｍＴｏｒｒであり、前記薄膜内のＺｎＳ−ＳｉＯ２とＰｔとの体積比は８０：２０であった。
　マスク層と反射膜間にＺｎＳ−ＳｉＯ２をさらに成膜したことを除いては前記実施例２と同じ方法で再生専用ディスクを製造した。
　（比較例１）
　トラックピッチ０．７４μｍのプリグルーブを有し、ピットが形成されている０．６mm厚さのＰＣ基板に反射膜としてＡｇをスパッタリング法で成膜し、光硬化樹脂保護層をスピンコーティング法で形成してマスク層のない再生専用光ディスクを製造した。
　（試験例１）
　前記実施例１〜３及び比較例１から得られたディスクの性能を６３５ｎｍ、ＮＡ　０．６０のピックアップを有するＤＶＤ評価用設備で評価した。線速度は６ｍ／ｓ、再生パワーは４ｍＷとしてその結果を図３に示した。図３から分かるように、この場合の再生分解能（λ／４ＮＡ）は２６５ｎｍに当り、ＤＶＤにおける最小ピット長は４００ｎｍであるが、比較例１により製造された光ディスクでは分解能２６５ｎｍより小さな２５０ｎｍ及び２００ｎｍのピットではＣ／Ｎが全然得られなかったが、実施例１により製造された光ディスクでは２５０ｎｍのピットに対しても実用化可能なレベルである約４０ｄＢのＣ／Ｎが得られ、これより超解像効果が得られるということが確認しうる。
　ディスク内に超解像近接場構造を導入することによってレーザービームの分解能以下サイズのマークを再生できる高密度再生専用光ディスクに適用しうる。
従来の技術に係るディスク構造の概略図である。 本発明の実施例１に係るディスク構造の概略図である。 本発明の実施例１〜３及び比較例１から得られたディスクの性能評価についてのグラフである。
符号の説明
１０　基板
１１　マスク層
１２　記録層
１３　反射層
１４　誘電体層
１５　記録マーク
１６　金属粒子
１７　ピット

Claims (7)

  1. 　ピットが形成されている基板と、
    　誘電体材料と金属粒子との混合物よりなって超解像近接場構造を有する１つ以上のマスク層と、を含む高密度再生専用光ディスク。
  2. 　前記誘電体材料は金属酸化物、窒化物、硫黄物、フッ化物またはこれらの混合物であることを特徴とする請求項１に記載の高密度再生専用光ディスク。
  3. 　前記誘電体材料はＺｎＳ−ＳｉＯ２であることを特徴とする請求項１に記載の高密度再生専用光ディスク。
  4. 　前記金属粒子は金、白金、ロジウム、パラジウムまたはこれらの混合物であることを特徴とする請求項１に記載の高密度再生専用光ディスク。
  5. 　前記金属粒子は白金であることを特徴とする請求項１に記載の高密度再生専用光ディスク。
  6. 　１つ以上の反射層をさらに備えることを特徴とする請求項１に記載の高密度光ディスク。
  7. 　前記マスク層の少なくとも１面に誘電体層をさらに含むことを特徴とする請求項１に記載の高密度光ディスク。
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