JP2004110890A5 - - Google Patents

Download PDF

Info

Publication number
JP2004110890A5
JP2004110890A5 JP2002268975A JP2002268975A JP2004110890A5 JP 2004110890 A5 JP2004110890 A5 JP 2004110890A5 JP 2002268975 A JP2002268975 A JP 2002268975A JP 2002268975 A JP2002268975 A JP 2002268975A JP 2004110890 A5 JP2004110890 A5 JP 2004110890A5
Authority
JP
Japan
Prior art keywords
mode
semiconductor memory
register
memory device
burst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002268975A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004110890A (ja
JP4111789B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002268975A external-priority patent/JP4111789B2/ja
Priority to JP2002268975A priority Critical patent/JP4111789B2/ja
Priority to EP03019245.4A priority patent/EP1400978B1/en
Priority to TW092123937A priority patent/TWI223811B/zh
Priority to CNB031562108A priority patent/CN100369156C/zh
Priority to US10/654,999 priority patent/US6842391B2/en
Priority to KR1020030063261A priority patent/KR100922412B1/ko
Publication of JP2004110890A publication Critical patent/JP2004110890A/ja
Priority to US11/001,619 priority patent/US7057959B2/en
Publication of JP2004110890A5 publication Critical patent/JP2004110890A5/ja
Publication of JP4111789B2 publication Critical patent/JP4111789B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2002268975A 2002-09-13 2002-09-13 半導体記憶装置の制御方法及び半導体記憶装置 Expired - Lifetime JP4111789B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002268975A JP4111789B2 (ja) 2002-09-13 2002-09-13 半導体記憶装置の制御方法及び半導体記憶装置
EP03019245.4A EP1400978B1 (en) 2002-09-13 2003-08-26 Semiconductor memory and method for controlling the same
TW092123937A TWI223811B (en) 2002-09-13 2003-08-29 Semiconductor memory and method for controlling the same
CNB031562108A CN100369156C (zh) 2002-09-13 2003-09-04 半导体存储器及其控制方法
US10/654,999 US6842391B2 (en) 2002-09-13 2003-09-05 Semiconductor memory of a dynamic random access memory (DRAM) type having a static random access memory (SRAM) interface
KR1020030063261A KR100922412B1 (ko) 2002-09-13 2003-09-09 반도체 기억 장치의 제어 방법 및 반도체 기억 장치
US11/001,619 US7057959B2 (en) 2002-09-13 2004-12-02 Semiconductor memory having mode register access in burst mode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002268975A JP4111789B2 (ja) 2002-09-13 2002-09-13 半導体記憶装置の制御方法及び半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2004110890A JP2004110890A (ja) 2004-04-08
JP2004110890A5 true JP2004110890A5 (enExample) 2005-06-16
JP4111789B2 JP4111789B2 (ja) 2008-07-02

Family

ID=31944505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002268975A Expired - Lifetime JP4111789B2 (ja) 2002-09-13 2002-09-13 半導体記憶装置の制御方法及び半導体記憶装置

Country Status (6)

Country Link
US (2) US6842391B2 (enExample)
EP (1) EP1400978B1 (enExample)
JP (1) JP4111789B2 (enExample)
KR (1) KR100922412B1 (enExample)
CN (1) CN100369156C (enExample)
TW (1) TWI223811B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4111789B2 (ja) * 2002-09-13 2008-07-02 富士通株式会社 半導体記憶装置の制御方法及び半導体記憶装置
EP1418589A1 (en) * 2002-11-06 2004-05-12 STMicroelectronics S.r.l. Method and device for timing random reading of a memory device
JP4386706B2 (ja) * 2003-11-06 2009-12-16 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
TWI260019B (en) * 2004-05-21 2006-08-11 Fujitsu Ltd Semiconductor memory device and memory system
JP4620504B2 (ja) * 2005-03-10 2011-01-26 富士通セミコンダクター株式会社 半導体メモリおよびシステム装置
KR100771876B1 (ko) * 2006-07-14 2007-11-01 삼성전자주식회사 버스트 데이터의 리오더링 여부에 따라 클럭 레이턴시를조절하는 반도체 메모리 장치 및 방법
JP5018074B2 (ja) * 2006-12-22 2012-09-05 富士通セミコンダクター株式会社 メモリ装置，メモリコントローラ及びメモリシステム
JP5029205B2 (ja) * 2007-08-10 2012-09-19 富士通セミコンダクター株式会社 半導体メモリ、半導体メモリのテスト方法およびシステム
US8307180B2 (en) 2008-02-28 2012-11-06 Nokia Corporation Extended utilization area for a memory device
KR100987296B1 (ko) * 2008-06-24 2010-10-12 종 진 우 범용 캐스터
US8874824B2 (en) 2009-06-04 2014-10-28 Memory Technologies, LLC Apparatus and method to share host system RAM with mass storage memory RAM
US9417998B2 (en) 2012-01-26 2016-08-16 Memory Technologies Llc Apparatus and method to provide cache move with non-volatile mass memory system
US9311226B2 (en) 2012-04-20 2016-04-12 Memory Technologies Llc Managing operational state data of a memory module using host memory in association with state change
JP2015008029A (ja) * 2013-06-26 2015-01-15 マイクロン テクノロジー， インク． 半導体装置
WO2015089488A1 (en) 2013-12-12 2015-06-18 Memory Technologies Llc Channel optimized storage modules
KR102164019B1 (ko) * 2014-01-27 2020-10-12 에스케이하이닉스 주식회사 버스트 랭스 제어 장치 및 이를 포함하는 반도체 장치
US10380060B2 (en) * 2016-06-17 2019-08-13 Etron Technology, Inc. Low-pincount high-bandwidth memory and memory bus
US20230221892A1 (en) * 2022-01-12 2023-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Memory interface

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6275948B1 (en) * 1997-11-14 2001-08-14 Agere Systems Guardian Corp. Processor powerdown operation using intermittent bursts of instruction clock
JP2000011652A (ja) * 1998-06-29 2000-01-14 Nec Corp 半導体記憶装置
US6314049B1 (en) * 2000-03-30 2001-11-06 Micron Technology, Inc. Elimination of precharge operation in synchronous flash memory
JP4111789B2 (ja) * 2002-09-13 2008-07-02 富士通株式会社 半導体記憶装置の制御方法及び半導体記憶装置

Similar Documents

Publication Publication Date Title
JP2004110890A5 (enExample)
US7603493B2 (en) Dynamically setting burst length of memory device by applying signal to at least one external pin during a read or write transaction
JP5801436B2 (ja) 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置
US6577553B2 (en) Semiconductor memory device
DE60035810D1 (de) Flash-Speicher
JP2007102994A (ja) 電流消耗を減少させる内部電源電圧発生回路を有するマルチチップ半導体メモリ装置
JPS58127262A (ja) マイクロコンピユ−タ
JP2008090851A (ja) 記憶システム、およびデータ転送方法
JP4111789B2 (ja) 半導体記憶装置の制御方法及び半導体記憶装置
KR0142033B1 (ko) 마이크로 컴퓨터
JP2003187593A5 (enExample)
JP4869713B2 (ja) マルチチップパッケージデバイス
JP2006107326A (ja) 半導体集積回路
JP2008009817A (ja) 半導体装置及びデータ転送方法
TW200617963A (en) Method and apparatus for information setting in a non-volatile memory device
JP2008192264A (ja) 半導体記憶装置
JP2007299227A (ja) 情報処理装置及び情報処理装置のブート方法
JP2008282246A (ja) 情報処理装置
KR100621635B1 (ko) 원낸드 플래시 메모리 장치의 인터럽트 제어 방법 및 장치
JP2021152779A (ja) 半導体記憶装置
JP2006243811A (ja) Ｄｍａ転送システム及びｄｍａ転送方法
TW200623116A (en) Method of controlling mode register set operation in memory device and circuit thereof
KR20000026010A (ko) 플래시 메모리 장치
KR100895686B1 (ko) 마이크로 컨트롤러의 데이터 로드 타이밍을 감소시키는 방법
JPS6140628A (ja) メモリ回路