JP2004095717A - アニールウェーハのボロン汚染消滅方法 - Google Patents

アニールウェーハのボロン汚染消滅方法 Download PDF

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Publication number
JP2004095717A
JP2004095717A JP2002252608A JP2002252608A JP2004095717A JP 2004095717 A JP2004095717 A JP 2004095717A JP 2002252608 A JP2002252608 A JP 2002252608A JP 2002252608 A JP2002252608 A JP 2002252608A JP 2004095717 A JP2004095717 A JP 2004095717A
Authority
JP
Japan
Prior art keywords
boron
wafer
annealing
oxide film
hydrogen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002252608A
Other languages
English (en)
Japanese (ja)
Inventor
▲裴▼　昭益
Shoeki Hai
Yoshinobu Nakada
中田　嘉信
Kenichi Kaneko
金子　健一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumitomo Mitsubishi Silicon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Mitsubishi Silicon Corp filed Critical Sumitomo Mitsubishi Silicon Corp
Priority to JP2002252608A priority Critical patent/JP2004095717A/ja
Priority to US10/525,442 priority patent/US7199057B2/en
Priority to AU2003261789A priority patent/AU2003261789A1/en
Priority to KR1020057003175A priority patent/KR100686989B1/ko
Priority to EP03791374A priority patent/EP1548817B1/en
Priority to PCT/JP2003/010934 priority patent/WO2004021428A1/ja
Priority to TW092123975A priority patent/TW200406848A/zh
Publication of JP2004095717A publication Critical patent/JP2004095717A/ja
Pending legal-status Critical Current

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    • H10P95/90—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H10P70/12—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2002252608A 2002-08-30 2002-08-30 アニールウェーハのボロン汚染消滅方法 Pending JP2004095717A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002252608A JP2004095717A (ja) 2002-08-30 2002-08-30 アニールウェーハのボロン汚染消滅方法
US10/525,442 US7199057B2 (en) 2002-08-30 2003-08-28 Method of eliminating boron contamination in annealed wafer
AU2003261789A AU2003261789A1 (en) 2002-08-30 2003-08-28 Method of eliminating boron contamination of annealed wafer
KR1020057003175A KR100686989B1 (ko) 2002-08-30 2003-08-28 어닐 웨이퍼의 보론 오염 소멸 방법
EP03791374A EP1548817B1 (en) 2002-08-30 2003-08-28 Method of eliminating boron contamination of annealed wafer
PCT/JP2003/010934 WO2004021428A1 (ja) 2002-08-30 2003-08-28 アニールウェーハのボロン汚染消滅方法
TW092123975A TW200406848A (en) 2002-08-30 2003-08-29 Method of eliminating boron contamination of annealed wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002252608A JP2004095717A (ja) 2002-08-30 2002-08-30 アニールウェーハのボロン汚染消滅方法

Publications (1)

Publication Number Publication Date
JP2004095717A true JP2004095717A (ja) 2004-03-25

Family

ID=31972751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002252608A Pending JP2004095717A (ja) 2002-08-30 2002-08-30 アニールウェーハのボロン汚染消滅方法

Country Status (7)

Country Link
US (1) US7199057B2 (OSRAM)
EP (1) EP1548817B1 (OSRAM)
JP (1) JP2004095717A (OSRAM)
KR (1) KR100686989B1 (OSRAM)
AU (1) AU2003261789A1 (OSRAM)
TW (1) TW200406848A (OSRAM)
WO (1) WO2004021428A1 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322875A (ja) * 2004-05-10 2005-11-17 Siltron Inc シリコンウェーハ及びその製造方法
US8153538B1 (en) 2010-12-09 2012-04-10 Memc Electronic Materials, Inc. Process for annealing semiconductor wafers with flat dopant depth profiles

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080150028A1 (en) * 2006-12-21 2008-06-26 Advanced Micro Devices, Inc. Zero interface polysilicon to polysilicon gate for semiconductor device
CN103311110B (zh) 2012-03-12 2016-08-31 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法，晶体管的形成方法
CN106024586B (zh) * 2016-06-23 2018-07-06 扬州扬杰电子科技股份有限公司 一种碳化硅表面清洁方法
JP6834932B2 (ja) * 2017-12-19 2021-02-24 株式会社Sumco 貼り合わせウェーハ用の支持基板の製造方法および貼り合わせウェーハの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058552A (ja) * 1998-08-06 2000-02-25 Toshiba Ceramics Co Ltd シリコンウェーハの熱処理方法
JP2002100634A (ja) * 2000-09-21 2002-04-05 Shin Etsu Handotai Co Ltd アニールウェーハの製造方法およびアニールウェーハ
WO2002052632A1 (en) * 2000-12-22 2002-07-04 Komatsu Denshi Kinzoku Kabushiki Kaisha Method of heat treatment of silicon wafer doped with boron
JP2004072066A (ja) * 2002-08-06 2004-03-04 Siltron Inc アニールウェーハの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000082679A (ja) * 1998-07-08 2000-03-21 Canon Inc 半導体基板とその作製方法
CN1363118A (zh) * 2000-03-29 2002-08-07 信越半导体株式会社 退火圆片的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058552A (ja) * 1998-08-06 2000-02-25 Toshiba Ceramics Co Ltd シリコンウェーハの熱処理方法
JP2002100634A (ja) * 2000-09-21 2002-04-05 Shin Etsu Handotai Co Ltd アニールウェーハの製造方法およびアニールウェーハ
WO2002052632A1 (en) * 2000-12-22 2002-07-04 Komatsu Denshi Kinzoku Kabushiki Kaisha Method of heat treatment of silicon wafer doped with boron
JP2004072066A (ja) * 2002-08-06 2004-03-04 Siltron Inc アニールウェーハの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322875A (ja) * 2004-05-10 2005-11-17 Siltron Inc シリコンウェーハ及びその製造方法
JP2007318160A (ja) * 2004-05-10 2007-12-06 Siltron Inc シリコンウェーハ
JP2007329488A (ja) * 2004-05-10 2007-12-20 Siltron Inc シリコンウェーハの製造方法
US8153538B1 (en) 2010-12-09 2012-04-10 Memc Electronic Materials, Inc. Process for annealing semiconductor wafers with flat dopant depth profiles

Also Published As

Publication number Publication date
US20060148249A1 (en) 2006-07-06
US7199057B2 (en) 2007-04-03
TWI303087B (OSRAM) 2008-11-11
EP1548817A1 (en) 2005-06-29
KR20050058517A (ko) 2005-06-16
AU2003261789A1 (en) 2004-03-19
EP1548817A4 (en) 2007-08-01
TW200406848A (en) 2004-05-01
WO2004021428A1 (ja) 2004-03-11
KR100686989B1 (ko) 2007-02-26
EP1548817B1 (en) 2012-05-30

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