JP2004087546A5 - - Google Patents

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Publication number
JP2004087546A5
JP2004087546A5 JP2002243004A JP2002243004A JP2004087546A5 JP 2004087546 A5 JP2004087546 A5 JP 2004087546A5 JP 2002243004 A JP2002243004 A JP 2002243004A JP 2002243004 A JP2002243004 A JP 2002243004A JP 2004087546 A5 JP2004087546 A5 JP 2004087546A5
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JP
Japan
Prior art keywords
silane compound
here
formula
hydrogenated
integer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002243004A
Other languages
English (en)
Japanese (ja)
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JP2004087546A (ja
JP4016419B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002243004A external-priority patent/JP4016419B2/ja
Priority to JP2002243004A priority Critical patent/JP4016419B2/ja
Priority to KR1020047005943A priority patent/KR20050026692A/ko
Priority to EP03792692A priority patent/EP1551057B1/en
Priority to DE60328302T priority patent/DE60328302D1/de
Priority to CNB038014351A priority patent/CN100423197C/zh
Priority to US10/515,728 priority patent/US7473443B2/en
Priority to AU2003262236A priority patent/AU2003262236A1/en
Priority to PCT/JP2003/010380 priority patent/WO2004019393A1/ja
Priority to TW092123202A priority patent/TW200418724A/zh
Publication of JP2004087546A publication Critical patent/JP2004087546A/ja
Publication of JP2004087546A5 publication Critical patent/JP2004087546A5/ja
Publication of JP4016419B2 publication Critical patent/JP4016419B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002243004A 2002-08-23 2002-08-23 シリコン膜形成用組成物およびシリコン膜の形成方法 Expired - Fee Related JP4016419B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2002243004A JP4016419B2 (ja) 2002-08-23 2002-08-23 シリコン膜形成用組成物およびシリコン膜の形成方法
AU2003262236A AU2003262236A1 (en) 2002-08-23 2003-08-15 Composition for forming silicon film and method for forming silicon film
EP03792692A EP1551057B1 (en) 2002-08-23 2003-08-15 Composition for forming a silicon film and method for forming a silicon film
DE60328302T DE60328302D1 (de) 2002-08-23 2003-08-15 Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms
CNB038014351A CN100423197C (zh) 2002-08-23 2003-08-15 硅膜形成用组合物和硅膜的形成方法
US10/515,728 US7473443B2 (en) 2002-08-23 2003-08-15 Composition for forming silicon film and method for forming silicon film
KR1020047005943A KR20050026692A (ko) 2002-08-23 2003-08-15 실리콘막 형성용 조성물 및 실리콘막의 형성 방법
PCT/JP2003/010380 WO2004019393A1 (ja) 2002-08-23 2003-08-15 シリコン膜形成用組成物およびシリコン膜の形成方法
TW092123202A TW200418724A (en) 2002-08-23 2003-08-22 Composition for forming silicon film and method for forming silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002243004A JP4016419B2 (ja) 2002-08-23 2002-08-23 シリコン膜形成用組成物およびシリコン膜の形成方法

Publications (3)

Publication Number Publication Date
JP2004087546A JP2004087546A (ja) 2004-03-18
JP2004087546A5 true JP2004087546A5 (https=) 2005-05-26
JP4016419B2 JP4016419B2 (ja) 2007-12-05

Family

ID=32051879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002243004A Expired - Fee Related JP4016419B2 (ja) 2002-08-23 2002-08-23 シリコン膜形成用組成物およびシリコン膜の形成方法

Country Status (1)

Country Link
JP (1) JP4016419B2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186320A (ja) * 2002-12-02 2004-07-02 Jsr Corp シリコン膜形成用組成物および太陽電池
JP4761041B2 (ja) * 2005-02-23 2011-08-31 ソニー株式会社 シリコン膜の形成方法
JP4725735B2 (ja) * 2006-08-25 2011-07-13 Ｊｓｒ株式会社 ガスバリア用シリカ膜積層フィルムの製造方法
WO2008085806A1 (en) * 2007-01-03 2008-07-17 Nanogram Corporation Nanoparticle inks based on silicon/germanium, doped particles, printing and processes for semiconductor applications
DE102007050288A1 (de) * 2007-10-18 2009-04-23 Otto Hauser Halbleiterbauteil
JP2011192908A (ja) * 2010-03-16 2011-09-29 Toshiba Corp ポリシリコン膜の製造方法、太陽電池及び電子デバイス
US8895962B2 (en) * 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
JP2013105991A (ja) * 2011-11-16 2013-05-30 Teijin Ltd 半導体積層体、半導体デバイス、及びそれらの製造方法
JP6099304B2 (ja) * 2010-12-10 2017-03-22 帝人株式会社 半導体積層体、半導体デバイス、及びそれらの製造方法
JP5921088B2 (ja) * 2011-05-27 2016-05-24 帝人株式会社 未焼結シリコン粒子膜及び半導体シリコン膜、並びにそれらの製造方法
EP2701182A3 (en) 2010-12-10 2014-06-04 Teijin Limited Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device
JP5253561B2 (ja) * 2011-02-04 2013-07-31 帝人株式会社 半導体デバイスの製造方法、半導体デバイス、並びに分散体
WO2012141292A1 (ja) * 2011-04-15 2012-10-18 昭和電工株式会社 シリコン膜の製造方法
JP5676363B2 (ja) * 2011-05-26 2015-02-25 国立大学法人広島大学 光起電力素子およびその製造方法
CA2752844A1 (en) 2011-09-19 2013-03-19 Hydro-Quebec Method for preparing a particulate of si or siox-based anode material, and material thus obtained
CN107039532B (zh) * 2012-03-30 2020-08-25 帝人株式会社 掺杂剂注入层、其形成方法及半导体装置的制造方法
JP5930038B2 (ja) 2012-07-20 2016-06-08 旭化成株式会社 太陽電池及び太陽電池の製造方法
WO2017079436A1 (en) * 2015-11-03 2017-05-11 Kaneka Americas Holding, Inc. Contro of nanoparticles dispersion stablity through dielectric constant tuning, and determination of intrinsic dielectric constant of surfactant-free nanoparticles
WO2019011681A1 (en) 2017-07-12 2019-01-17 Exeger Operations Ab PHOTOVOLTAIC DEVICE HAVING A LIGHT ABSORPTION LAYER COMPRISING A PLURALITY OF GRAINS OF A DOPED SEMICONDUCTOR MATERIAL
SE540184C2 (en) 2016-07-29 2018-04-24 Exeger Operations Ab A light absorbing layer and a photovoltaic device including a light absorbing layer
WO2018021952A1 (en) 2016-07-29 2018-02-01 Exeger Operations Ab A light absorbing layer and a photovoltaic device including a light absorbing layer
US10535527B2 (en) * 2017-07-13 2020-01-14 Applied Materials, Inc. Methods for depositing semiconductor films

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