JP2004064088A - 静電放電から保護される薄膜共振器 - Google Patents
静電放電から保護される薄膜共振器 Download PDFInfo
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- JP2004064088A JP2004064088A JP2003278831A JP2003278831A JP2004064088A JP 2004064088 A JP2004064088 A JP 2004064088A JP 2003278831 A JP2003278831 A JP 2003278831A JP 2003278831 A JP2003278831 A JP 2003278831A JP 2004064088 A JP2004064088 A JP 2004064088A
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- resonator
- bonding pad
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- thin film
- film resonator
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- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 48
- 239000000463 material Substances 0.000 description 15
- 239000011241 protective layer Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02141—Means for compensation or elimination of undesirable effects of electric discharge due to pyroelectricity
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
【解決手段】 半導体基板上(14)に薄膜共振器(12)を有するフィルタ、および該フィルタを製造する方法を公開する。フィルタは、共振器(12)に接続するボンディングパッド(64)を有し、基板(14)に接触して、該基板(14)と共にショットキーダイオード(65)を形成し、静電放電から共振器(12)を保護する。ボンディングパッド(65)は、導体材料によって構成される。
【選択図】図2B
Description
Claims (10)
- 半導体基板上に製造された薄膜共振器と、
前記薄膜共振器に接続されたボンディングパッドであって、静電放電から前記薄膜共振器を保護するために、前記半導体基板とともにショットキーダイオードを形成するボンディングパットと、
を備える装置。 - 前記ボンディングパッドが、前記半導体基板とともに複数のショットキーダイオードを形成する、請求項1に記載の装置。
- 前記ボンディングパッドが導体材料を含む、請求項1に記載の装置。
- 前記ボンディングパッドが、金、ニッケル、およびクロムからなるグループから選択された導体を含む、請求項1に記載の装置。
- 前記薄膜共振器が、底部電極および頂部電極によってサンドイッチ状にはさまれた圧電部分を備える、請求項1に記載の装置。
- 前記圧電部分が窒化アルミニウムを含み、前記底部および頂部電極がモリブデンを含む、請求項5に記載の装置。
- 基板上に薄膜共振器を製造するステップと、
前記薄膜共振器に接続されるボンディングパッドを製造するステップであって、前記ボンディングパッドの一部が、ショットキーダイオードを形成するように前記基板に接触する、前記ボンディングパッドを製造するステップと、
を含む装置の製造方法。 - 前記ボンディングパッドが、前記基板とともに複数のショットキーダイオードを形成する、請求項7に記載の装置の製造方法。
- 前記ボンディングパッドが導体材料を含む、請求項7に記載の装置の製造方法。
- 前記ボンディングパッドが、金、ニッケル、およびクロムからなるグループから選択された導体を含む、請求項7に記載の装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/209,602 US6894360B2 (en) | 2002-07-30 | 2002-07-30 | Electrostatic discharge protection of thin-film resonators |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004064088A true JP2004064088A (ja) | 2004-02-26 |
Family
ID=27662708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003278831A Pending JP2004064088A (ja) | 2002-07-30 | 2003-07-24 | 静電放電から保護される薄膜共振器 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6894360B2 (ja) |
JP (1) | JP2004064088A (ja) |
DE (1) | DE10321470A1 (ja) |
GB (1) | GB2391407B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006326701A (ja) * | 2005-05-23 | 2006-12-07 | Sony Corp | 微小電気機械デバイス |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6662419B2 (en) * | 2001-12-17 | 2003-12-16 | Intel Corporation | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
KR100489828B1 (ko) * | 2003-04-07 | 2005-05-16 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
KR100646135B1 (ko) * | 2003-07-21 | 2006-11-23 | 쌍신전자통신주식회사 | 실리콘 체적탄성파 소자 및 그 제조방법 |
JP2005150990A (ja) * | 2003-11-13 | 2005-06-09 | Tdk Corp | 薄膜バルク波共振器ウェハ及び薄膜バルク波共振器の製造方法 |
JP4223428B2 (ja) * | 2004-03-31 | 2009-02-12 | 富士通メディアデバイス株式会社 | フィルタおよびその製造方法 |
US7227433B2 (en) * | 2004-03-31 | 2007-06-05 | Intel Corporation | Electro mechanical device having a sealed cavity |
JP4697528B2 (ja) * | 2004-06-02 | 2011-06-08 | 太陽誘電株式会社 | 弾性波装置 |
US7304412B2 (en) * | 2005-01-31 | 2007-12-04 | Avago Technologes Wireless Ip (Singapore) Pte Ltd | Apparatus embodying doped substrate portion |
US7443269B2 (en) * | 2005-07-27 | 2008-10-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit |
US9055093B2 (en) | 2005-10-21 | 2015-06-09 | Kevin R. Borders | Method, system and computer program product for detecting at least one of security threats and undesirable computer files |
US8586195B2 (en) * | 2007-07-11 | 2013-11-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method for forming an acoustic mirror with reduced metal layer roughness and related structure |
US8330556B2 (en) * | 2009-11-23 | 2012-12-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Passivation layers in acoustic resonators |
US8830012B2 (en) * | 2010-09-07 | 2014-09-09 | Wei Pang | Composite bulk acoustic wave resonator |
US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
US9040837B2 (en) * | 2011-12-14 | 2015-05-26 | Ibiden Co., Ltd. | Wiring board and method for manufacturing the same |
US9246467B2 (en) * | 2012-05-31 | 2016-01-26 | Texas Instruments Incorporated | Integrated resonator with a mass bias |
US10637435B2 (en) * | 2016-12-22 | 2020-04-28 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator and filter including the same |
KR102380843B1 (ko) * | 2016-12-22 | 2022-04-01 | 삼성전기주식회사 | 체적 음향 공진기 및 이를 포함하는 필터 |
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JPS61127217A (ja) * | 1984-11-26 | 1986-06-14 | Toshiba Corp | 圧電薄膜共振子 |
JPH0358468A (ja) * | 1989-07-26 | 1991-03-13 | Nec Corp | 半導体集積回路装置 |
JPH04343280A (ja) * | 1991-05-20 | 1992-11-30 | Canon Inc | 微小変位素子及びその製造方法、情報処理装置、走査型トンネル顕微鏡 |
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JPH1032454A (ja) * | 1996-07-15 | 1998-02-03 | Olympus Optical Co Ltd | マイクロ圧電振動子 |
JP2001177365A (ja) * | 1999-11-29 | 2001-06-29 | Nokia Mobile Phones Ltd | 平衡フィルターの中心周波数の調整方法及び複数の平衡フィルター |
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2002
- 2002-07-30 US US10/209,602 patent/US6894360B2/en not_active Expired - Fee Related
-
2003
- 2003-05-13 DE DE10321470A patent/DE10321470A1/de not_active Withdrawn
- 2003-06-19 GB GB0314307A patent/GB2391407B/en not_active Expired - Fee Related
- 2003-07-24 JP JP2003278831A patent/JP2004064088A/ja active Pending
-
2004
- 2004-01-06 US US10/752,661 patent/US7094678B2/en not_active Expired - Fee Related
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JPS5858757A (ja) * | 1981-10-05 | 1983-04-07 | Nec Corp | 半導体装置 |
JPS61127217A (ja) * | 1984-11-26 | 1986-06-14 | Toshiba Corp | 圧電薄膜共振子 |
JPH0358468A (ja) * | 1989-07-26 | 1991-03-13 | Nec Corp | 半導体集積回路装置 |
JPH04343280A (ja) * | 1991-05-20 | 1992-11-30 | Canon Inc | 微小変位素子及びその製造方法、情報処理装置、走査型トンネル顕微鏡 |
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JPH1032454A (ja) * | 1996-07-15 | 1998-02-03 | Olympus Optical Co Ltd | マイクロ圧電振動子 |
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Cited By (1)
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---|---|---|---|---|
JP2006326701A (ja) * | 2005-05-23 | 2006-12-07 | Sony Corp | 微小電気機械デバイス |
Also Published As
Publication number | Publication date |
---|---|
GB0314307D0 (en) | 2003-07-23 |
US20040021191A1 (en) | 2004-02-05 |
GB2391407A (en) | 2004-02-04 |
DE10321470A1 (de) | 2004-02-26 |
US6894360B2 (en) | 2005-05-17 |
US7094678B2 (en) | 2006-08-22 |
US20040142497A1 (en) | 2004-07-22 |
GB2391407B (en) | 2005-08-03 |
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