JP2004047975A5 - - Google Patents
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- Publication number
- JP2004047975A5 JP2004047975A5 JP2003137073A JP2003137073A JP2004047975A5 JP 2004047975 A5 JP2004047975 A5 JP 2004047975A5 JP 2003137073 A JP2003137073 A JP 2003137073A JP 2003137073 A JP2003137073 A JP 2003137073A JP 2004047975 A5 JP2004047975 A5 JP 2004047975A5
- Authority
- JP
- Japan
- Prior art keywords
- peeled
- peeling
- semiconductor device
- layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 37
- 239000010410 layer Substances 0.000 claims 31
- 239000004065 semiconductor Substances 0.000 claims 27
- 239000000853 adhesive Substances 0.000 claims 25
- 230000001070 adhesive effect Effects 0.000 claims 25
- 238000004519 manufacturing process Methods 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 12
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims 11
- 239000010408 film Substances 0.000 claims 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 239000004033 plastic Substances 0.000 claims 6
- 239000002356 single layer Substances 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 4
- 229910052779 Neodymium Inorganic materials 0.000 claims 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 229910052804 chromium Inorganic materials 0.000 claims 4
- 239000011651 chromium Substances 0.000 claims 4
- 229910017052 cobalt Inorganic materials 0.000 claims 4
- 239000010941 cobalt Substances 0.000 claims 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 229910052741 iridium Inorganic materials 0.000 claims 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 4
- 229910052742 iron Inorganic materials 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 239000011733 molybdenum Substances 0.000 claims 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910052762 osmium Inorganic materials 0.000 claims 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 4
- 229910052763 palladium Inorganic materials 0.000 claims 4
- 229910052703 rhodium Inorganic materials 0.000 claims 4
- 239000010948 rhodium Substances 0.000 claims 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 4
- 238000005096 rolling process Methods 0.000 claims 4
- 229910052707 ruthenium Inorganic materials 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 239000004925 Acrylic resin Substances 0.000 claims 2
- 229920000178 Acrylic resin Polymers 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 2
- 229920002050 silicone resin Polymers 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 claims 1
- 238000003475 lamination Methods 0.000 claims 1
- -1 nitride compound Chemical class 0.000 claims 1
- 229920000647 polyepoxide Polymers 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 238000013518 transcription Methods 0.000 claims 1
- 230000035897 transcription Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003137073A JP2004047975A (ja) | 2002-05-17 | 2003-05-15 | 積層体の転写方法及び半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002143797 | 2002-05-17 | ||
| JP2003137073A JP2004047975A (ja) | 2002-05-17 | 2003-05-15 | 積層体の転写方法及び半導体装置の作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004265298A Division JP4757469B2 (ja) | 2002-05-17 | 2004-09-13 | 半導体装置の作製方法 |
| JP2009092389A Division JP5094776B2 (ja) | 2002-05-17 | 2009-04-06 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004047975A JP2004047975A (ja) | 2004-02-12 |
| JP2004047975A5 true JP2004047975A5 (enExample) | 2005-06-16 |
Family
ID=31719506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003137073A Withdrawn JP2004047975A (ja) | 2002-05-17 | 2003-05-15 | 積層体の転写方法及び半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004047975A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8872330B2 (en) | 2006-08-04 | 2014-10-28 | Osram Opto Semiconductors Gmbh | Thin-film semiconductor component and component assembly |
| US9054141B2 (en) | 2006-09-29 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005311295A (ja) * | 2004-03-26 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| WO2005114749A1 (en) | 2004-05-21 | 2005-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2006013462A (ja) * | 2004-05-21 | 2006-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| US9384439B2 (en) | 2004-06-14 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and communication system |
| JP5072196B2 (ja) * | 2004-06-14 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| DE102005055293A1 (de) * | 2005-08-05 | 2007-02-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip |
| CN101242951B (zh) * | 2005-08-09 | 2012-10-31 | 旭硝子株式会社 | 薄板玻璃层压体以及利用薄板玻璃层压体的显示装置的制造方法 |
| KR101255301B1 (ko) * | 2006-02-13 | 2013-04-15 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이의 제조 방법 |
| DE102007004304A1 (de) | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
| US7968382B2 (en) | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US8047442B2 (en) * | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JPWO2010026938A1 (ja) * | 2008-09-08 | 2012-02-02 | 電気化学工業株式会社 | 半導体製品の製造方法 |
| JP5586920B2 (ja) | 2008-11-20 | 2014-09-10 | 株式会社半導体エネルギー研究所 | フレキシブル半導体装置の作製方法 |
| KR101801956B1 (ko) | 2009-09-16 | 2017-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 이의 제조 방법 |
| JP5770542B2 (ja) * | 2011-06-14 | 2015-08-26 | キヤノン・コンポーネンツ株式会社 | 半導体装置の製造方法 |
| JP6244183B2 (ja) * | 2013-11-20 | 2017-12-06 | 東京応化工業株式会社 | 処理方法 |
| US10115747B2 (en) * | 2015-01-06 | 2018-10-30 | Sharp Kabushiki Kaisha | Method of producing component board |
| CN110892506B (zh) * | 2017-07-14 | 2024-04-09 | 信越化学工业株式会社 | 具有高热导率的器件基板及其制造方法 |
| CN115803122B (zh) * | 2020-07-31 | 2023-12-01 | 东丽株式会社 | 层叠体的制造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
| JP4619462B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| JP3809681B2 (ja) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
| JPH10150007A (ja) * | 1996-11-18 | 1998-06-02 | Toyo Chem Co Ltd | 半導体ウエハ固定用シート |
| JP3878288B2 (ja) * | 1997-07-28 | 2007-02-07 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| JP3406207B2 (ja) * | 1997-11-12 | 2003-05-12 | シャープ株式会社 | 表示用トランジスタアレイパネルの形成方法 |
| JP3804349B2 (ja) * | 1999-08-06 | 2006-08-02 | セイコーエプソン株式会社 | 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、および電気光学装置 |
| JP3994593B2 (ja) * | 1999-08-18 | 2007-10-24 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| JP4478268B2 (ja) * | 1999-12-28 | 2010-06-09 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
| JP2002217391A (ja) * | 2001-01-23 | 2002-08-02 | Seiko Epson Corp | 積層体の製造方法及び半導体装置 |
-
2003
- 2003-05-15 JP JP2003137073A patent/JP2004047975A/ja not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8872330B2 (en) | 2006-08-04 | 2014-10-28 | Osram Opto Semiconductors Gmbh | Thin-film semiconductor component and component assembly |
| US9054141B2 (en) | 2006-09-29 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
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