JP2004031918A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2004031918A
JP2004031918A JP2003087857A JP2003087857A JP2004031918A JP 2004031918 A JP2004031918 A JP 2004031918A JP 2003087857 A JP2003087857 A JP 2003087857A JP 2003087857 A JP2003087857 A JP 2003087857A JP 2004031918 A JP2004031918 A JP 2004031918A
Authority
JP
Japan
Prior art keywords
layer
film
wiring
insulating
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003087857A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004031918A5 (https=
Inventor
Jun Tanaka
田中　順
Yoshiharu Otani
大谷　美晴
Kiyoshi Ogata
尾形　潔
Yasumichi Suzuki
鈴木　康道
Katsuhiko Hotta
堀田　勝彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi Ltd
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi ULSI Systems Co Ltd filed Critical Hitachi Ltd
Priority to JP2003087857A priority Critical patent/JP2004031918A/ja
Publication of JP2004031918A publication Critical patent/JP2004031918A/ja
Publication of JP2004031918A5 publication Critical patent/JP2004031918A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2003087857A 2002-04-12 2003-03-27 半導体装置 Pending JP2004031918A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003087857A JP2004031918A (ja) 2002-04-12 2003-03-27 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002109901 2002-04-12
JP2003087857A JP2004031918A (ja) 2002-04-12 2003-03-27 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006013585A Division JP4443517B2 (ja) 2002-04-12 2006-01-23 半導体装置の製造方法
JP2006013663A Division JP2006128722A (ja) 2002-04-12 2006-01-23 半導体装置

Publications (2)

Publication Number Publication Date
JP2004031918A true JP2004031918A (ja) 2004-01-29
JP2004031918A5 JP2004031918A5 (https=) 2006-03-09

Family

ID=31189937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003087857A Pending JP2004031918A (ja) 2002-04-12 2003-03-27 半導体装置

Country Status (1)

Country Link
JP (1) JP2004031918A (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6943431B2 (en) 2002-08-02 2005-09-13 Fujitsu Limited Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer
JP2006210685A (ja) * 2005-01-28 2006-08-10 Canon Inc 固体撮像装置の製造方法
KR100644028B1 (ko) 2005-05-11 2006-11-10 매그나칩 반도체 유한회사 반도체 칩 및 반도체 칩 패키지
JP2007035926A (ja) * 2005-07-27 2007-02-08 Denso Corp 半導体装置およびその製造方法
JP2013197575A (ja) * 2012-03-23 2013-09-30 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
JP5355892B2 (ja) * 2005-09-16 2013-11-27 ルネサスエレクトロニクス株式会社 配線構造並びに半導体装置及びその製造方法
KR20140086535A (ko) * 2012-12-28 2014-07-08 삼성전기주식회사 회로 기판 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319928A (ja) * 2000-05-08 2001-11-16 Hitachi Ltd 半導体集積回路装置およびその製造方法
WO2002001627A1 (en) * 2000-06-26 2002-01-03 Hitachi, Ltd. Semiconductor device and method manufacturing the same
JP2003163265A (ja) * 2001-11-27 2003-06-06 Nec Corp 配線構造およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319928A (ja) * 2000-05-08 2001-11-16 Hitachi Ltd 半導体集積回路装置およびその製造方法
WO2002001627A1 (en) * 2000-06-26 2002-01-03 Hitachi, Ltd. Semiconductor device and method manufacturing the same
JP2003163265A (ja) * 2001-11-27 2003-06-06 Nec Corp 配線構造およびその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6943431B2 (en) 2002-08-02 2005-09-13 Fujitsu Limited Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer
US7256118B2 (en) 2002-08-02 2007-08-14 Fujitsu Limited Semiconductor device using low-K material as interlayer insulating film and its manufacture method
JP2006210685A (ja) * 2005-01-28 2006-08-10 Canon Inc 固体撮像装置の製造方法
KR100644028B1 (ko) 2005-05-11 2006-11-10 매그나칩 반도체 유한회사 반도체 칩 및 반도체 칩 패키지
JP2007035926A (ja) * 2005-07-27 2007-02-08 Denso Corp 半導体装置およびその製造方法
JP5355892B2 (ja) * 2005-09-16 2013-11-27 ルネサスエレクトロニクス株式会社 配線構造並びに半導体装置及びその製造方法
JP2013197575A (ja) * 2012-03-23 2013-09-30 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
KR20140086535A (ko) * 2012-12-28 2014-07-08 삼성전기주식회사 회로 기판 및 그 제조 방법
JP2014131011A (ja) * 2012-12-28 2014-07-10 Samsung Electro-Mechanics Co Ltd 回路基板及びその製造方法
KR101872532B1 (ko) * 2012-12-28 2018-06-28 삼성전기주식회사 회로 기판 및 그 제조 방법

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