JP2004004834A5 - - Google Patents
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- Publication number
- JP2004004834A5 JP2004004834A5 JP2003133513A JP2003133513A JP2004004834A5 JP 2004004834 A5 JP2004004834 A5 JP 2004004834A5 JP 2003133513 A JP2003133513 A JP 2003133513A JP 2003133513 A JP2003133513 A JP 2003133513A JP 2004004834 A5 JP2004004834 A5 JP 2004004834A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- alkyl group
- hydrogen atom
- photoresist composition
- positive photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000000217 alkyl group Chemical group 0.000 claims 10
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 claims 8
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims 8
- 229920002120 photoresistant polymer Polymers 0.000 claims 8
- 125000004432 carbon atoms Chemical group C* 0.000 claims 6
- 239000002253 acid Substances 0.000 claims 4
- 125000002947 alkylene group Chemical group 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- 125000001424 substituent group Chemical group 0.000 claims 4
- 125000003342 alkenyl group Chemical group 0.000 claims 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims 3
- 125000003118 aryl group Chemical group 0.000 claims 3
- 125000000732 arylene group Chemical group 0.000 claims 3
- 125000006165 cyclic alkyl group Chemical group 0.000 claims 3
- 125000005843 halogen group Chemical group 0.000 claims 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 3
- 125000000547 substituted alkyl group Chemical group 0.000 claims 3
- ORILYTVJVMAKLC-UHFFFAOYSA-N Adamantane Chemical group C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 claims 2
- 125000003368 amide group Chemical group 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims 2
- 125000004185 ester group Chemical group 0.000 claims 2
- 125000001033 ether group Chemical group 0.000 claims 2
- -1 iodonium sulfonate compound Chemical class 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 125000002252 acyl group Chemical group 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
- 239000003112 inhibitor Substances 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- 125000005156 substituted alkylene group Chemical group 0.000 claims 1
- 125000000565 sulfonamide group Chemical group 0.000 claims 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 claims 1
- 125000000101 thioether group Chemical group 0.000 claims 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28576299A JP3444821B2 (ja) | 1999-10-06 | 1999-10-06 | ポジ型フォトレジスト組成物 |
TW090108286A TW562995B (en) | 1999-10-06 | 2001-04-06 | Positive photoresist composition |
JP2003133513A JP3620745B2 (ja) | 1999-10-06 | 2003-05-12 | ポジ型フォトレジスト組成物 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28576299A JP3444821B2 (ja) | 1999-10-06 | 1999-10-06 | ポジ型フォトレジスト組成物 |
JP2003133513A JP3620745B2 (ja) | 1999-10-06 | 2003-05-12 | ポジ型フォトレジスト組成物 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28576299A Division JP3444821B2 (ja) | 1999-10-06 | 1999-10-06 | ポジ型フォトレジスト組成物 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004004834A JP2004004834A (ja) | 2004-01-08 |
JP2004004834A5 true JP2004004834A5 (hr) | 2004-12-16 |
JP3620745B2 JP3620745B2 (ja) | 2005-02-16 |
Family
ID=55182155
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28576299A Expired - Fee Related JP3444821B2 (ja) | 1999-10-06 | 1999-10-06 | ポジ型フォトレジスト組成物 |
JP2003133513A Expired - Lifetime JP3620745B2 (ja) | 1999-10-06 | 2003-05-12 | ポジ型フォトレジスト組成物 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28576299A Expired - Fee Related JP3444821B2 (ja) | 1999-10-06 | 1999-10-06 | ポジ型フォトレジスト組成物 |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP3444821B2 (hr) |
TW (1) | TW562995B (hr) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4768152B2 (ja) * | 2000-09-01 | 2011-09-07 | ダイセル化学工業株式会社 | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
JP2002116542A (ja) * | 2000-10-06 | 2002-04-19 | Daicel Chem Ind Ltd | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
JP2002357905A (ja) * | 2001-03-28 | 2002-12-13 | Sumitomo Chem Co Ltd | レジスト組成物 |
US6927009B2 (en) | 2001-05-22 | 2005-08-09 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
US6852468B2 (en) | 2001-06-12 | 2005-02-08 | Fuji Photo Film Co., Ltd. | Positive resist composition |
JP3912767B2 (ja) * | 2001-06-21 | 2007-05-09 | 富士フイルム株式会社 | ポジ型感光性組成物 |
JP4262422B2 (ja) * | 2001-06-28 | 2009-05-13 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物及びそれを用いたパターン形成方法 |
US7192681B2 (en) * | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
KR20030035823A (ko) * | 2001-08-02 | 2003-05-09 | 스미또모 가가꾸 고교 가부시끼가이샤 | 화학 증폭형 포지티브형 레지스트 조성물 |
JP3803286B2 (ja) * | 2001-12-03 | 2006-08-02 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターンの形成方法 |
JP3836359B2 (ja) * | 2001-12-03 | 2006-10-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
JP3841399B2 (ja) * | 2002-02-21 | 2006-11-01 | 富士写真フイルム株式会社 | ポジ型レジスト組成物 |
KR100979871B1 (ko) | 2002-04-01 | 2010-09-02 | 다이셀 가가꾸 고교 가부시끼가이샤 | ArF 엑시머 레이저 레지스트용 중합체 용액의 제조 방법 |
JP4439270B2 (ja) | 2003-06-18 | 2010-03-24 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4491503B2 (ja) * | 2003-06-18 | 2010-06-30 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
TWI366067B (en) | 2003-09-10 | 2012-06-11 | Fujifilm Corp | Photosensitive composition and pattern forming method using the same |
TWI375121B (en) | 2004-06-28 | 2012-10-21 | Fujifilm Corp | Photosensitive composition and method for forming pattern using the same |
JP4714488B2 (ja) * | 2004-08-26 | 2011-06-29 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4472586B2 (ja) * | 2005-06-20 | 2010-06-02 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4796792B2 (ja) | 2005-06-28 | 2011-10-19 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
JP4969916B2 (ja) * | 2006-05-25 | 2012-07-04 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
US8530148B2 (en) | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
EP2138898B1 (en) | 2007-04-13 | 2014-05-21 | FUJIFILM Corporation | Method for pattern formation, and use of resist composition in said method |
EP1980911A3 (en) | 2007-04-13 | 2009-06-24 | FUJIFILM Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
WO2008140119A1 (ja) | 2007-05-15 | 2008-11-20 | Fujifilm Corporation | パターン形成方法 |
US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
JP4617337B2 (ja) | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
KR20100017783A (ko) | 2007-06-12 | 2010-02-16 | 후지필름 가부시키가이샤 | 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
JP4590431B2 (ja) | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
KR100989565B1 (ko) | 2007-06-12 | 2010-10-25 | 후지필름 가부시키가이샤 | 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
US8632942B2 (en) | 2007-06-12 | 2014-01-21 | Fujifilm Corporation | Method of forming patterns |
JP4919508B2 (ja) * | 2007-09-13 | 2012-04-18 | 株式会社ダイセル | フォトレジスト用単量体、高分子化合物及びフォトレジスト組成物 |
JP5077355B2 (ja) | 2007-10-01 | 2012-11-21 | Jsr株式会社 | 感放射線性組成物 |
JP5806800B2 (ja) | 2008-03-28 | 2015-11-10 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
TWI533082B (zh) | 2008-09-10 | 2016-05-11 | Jsr股份有限公司 | 敏輻射性樹脂組成物 |
EP2325694B1 (en) | 2008-09-12 | 2017-11-08 | JSR Corporation | Radiation-sensitive resin composition, and resist pattern formation method |
JP5591465B2 (ja) | 2008-10-30 | 2014-09-17 | 丸善石油化学株式会社 | 濃度が均一な半導体リソグラフィー用共重合体溶液の製造方法 |
WO2011125685A1 (ja) | 2010-03-31 | 2011-10-13 | Jsr株式会社 | 感放射線性樹脂組成物 |
WO2012043684A1 (ja) | 2010-09-29 | 2012-04-05 | Jsr株式会社 | 感放射線性樹脂組成物及びパターン形成方法 |
CN112558409B (zh) * | 2019-09-25 | 2022-05-20 | 常州强力先端电子材料有限公司 | 能够在i线高产酸的磺酰亚胺类光产酸剂 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3042618B2 (ja) * | 1998-07-03 | 2000-05-15 | 日本電気株式会社 | ラクトン構造を有する(メタ)アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法 |
JP4131062B2 (ja) * | 1998-09-25 | 2008-08-13 | 信越化学工業株式会社 | 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
JP3547047B2 (ja) * | 1999-05-26 | 2004-07-28 | 富士写真フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JP2000338673A (ja) * | 1999-05-26 | 2000-12-08 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JP3390702B2 (ja) * | 1999-08-05 | 2003-03-31 | ダイセル化学工業株式会社 | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
JP3330903B2 (ja) * | 1999-08-05 | 2002-10-07 | ダイセル化学工業株式会社 | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
-
1999
- 1999-10-06 JP JP28576299A patent/JP3444821B2/ja not_active Expired - Fee Related
-
2001
- 2001-04-06 TW TW090108286A patent/TW562995B/zh active
-
2003
- 2003-05-12 JP JP2003133513A patent/JP3620745B2/ja not_active Expired - Lifetime