JP2003533034A - 光電池 - Google Patents
光電池Info
- Publication number
- JP2003533034A JP2003533034A JP2001581357A JP2001581357A JP2003533034A JP 2003533034 A JP2003533034 A JP 2003533034A JP 2001581357 A JP2001581357 A JP 2001581357A JP 2001581357 A JP2001581357 A JP 2001581357A JP 2003533034 A JP2003533034 A JP 2003533034A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- photoactive layer
- photovoltaic cell
- photoactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007704 transition Effects 0.000 claims abstract description 24
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920000547 conjugated polymer Polymers 0.000 claims abstract description 7
- 229910003472 fullerene Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 8
- 229910001508 alkali metal halide Inorganic materials 0.000 claims description 3
- 150000008045 alkali metal halides Chemical class 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 68
- 239000000370 acceptor Substances 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- -1 polyphenylene Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 241000218645 Cedrus Species 0.000 description 1
- 241001331845 Equus asinus x caballus Species 0.000 description 1
- 241000985630 Lota lota Species 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/354—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-insulator-semiconductor [m-i-s] structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Composite Materials (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
Description
ポリマー成分およびフラーレン(Fulleren)成分からなる光活性層およ
び光活性層の両側に備えられた2つの金属電極を有する光電池に関する。
チックは共役プラスチックと呼ばれる。この共役プラスチックは電子エネルギー
に関して半導体に匹敵するエネルギー帯域を有し、ドーピングにより非導電性の
状態から金属導電性の状態に移行することができる。この共役プラスチックの例
は、ポリフェニレン、ポリビニルフェニレン(PPV)、ポリチオフェンまたは
ポリアニリンである。しかし共役ポリマーからなる光電池ポリマーセルのエネル
ギー変換効率は典型的に10−3〜10−2%である。この効率を改良するため
に、すでに電子供与体として1つのポリマー成分および電子受容体として他のポ
リマー成分を使用する2つの共役ポリマー成分からなる不均一の層が提案された
(米国特許第5670791号明細書)。電子受容体としてフラーレン(Ful
lerene)、特にバックミンスターフラーレン(Buckminsterf
ullerene)C60の使用により(米国特許第5454880号明細書)
そのほかの通常の光活性層中の電荷担体再結合を十分に回避することができ、こ
れがAM(エアーマス)1.5条件下で0.6〜1%に効率を上昇する。それにも
かかわらず達成される効率は、光電池を形成するためのこの光活性層の経済的な
技術的な使用に関して低すぎる。
更に上昇することを可能にするように形成することである。
の厚さを有する電気的に絶縁性の移行層が備えられることにより解決される。
抵抗が生じ、これがおそらく金属電極と有機光活性層との反応に帰因するという
事情に基づく。従ってこの直接の影響を阻止できる場合は、そのほかは一定の条
件で電荷移行の改良が予想されるはずであり、これが効率の上昇を生じる。電気
的に絶縁性の移行層を備えることにより光活性層と電極とのこの直接の反応を十
分に排除することができ、しかし電気的絶縁性の移行層の厚さは多くても5nm
に制限され、従ってこの移行層の高い電気抵抗は光活性層と電極の間の電荷担体
の緩和された移行を阻止しない。意想外にも、光活性層と電極の間にいかなる貫
通する、閉鎖された中間層も予想できないきわめて少ない層厚により、電荷担体
の移行を更に悪化させずに、電極と光活性層の間に生じるそのほかのバリアを十
分に排除することができる。この電気的に絶縁性の移行層を用いて、この移行層
を有しないそのほかは同じ構造のセルに比べて光電池の効率を20〜25%にま
で高めることができる。しかしこの目的のために電気的に絶縁性の移行層の最適
化が必要である。
る。もちろん化学的な層構造により求める作用に影響させることもできる。従っ
て塩、特にアルカリ金属ハロゲン化物からなる移行層が有利であり、その際フッ
化リチウムからなる移行層を使用する処理に関して特に良好な特性を確認するこ
とができ、フッ化リチウムは真空下で光活性層または電極の上に所望の層厚で蒸
着することができる。
明による光電池の電流−電圧の特性曲線を示す。
ウム/錫−酸化物(ITO)からなる電極層2が付着されている。この電極層2
は一般に比較的粗い表面構造を有し、ドーピングにより導電性のポリマー、一般
にPEDOTからなる平滑層3で覆われている。この平滑層3の上に、被覆法に
応じて、例えば100nmから数μmまでの層厚を有する2つの成分からなる光
活性層4が被覆されている。光活性層4は電子供与体として共役ポリマー、有利
にはPPV誘導体および電子受容体としてフラーレン、特に機能性フラーレンP
CBMからなる。この場合にポリマーの語はホモポリマーおよびオリゴマーであ
ると理解される。2つの成分を溶剤と混合し、溶液として平滑層3の上に回転塗
布または滴下により被覆する。この光活性層4を使用して大きな面積を被覆する
ために、ドクター塗布法または印刷法を使用することができる。溶剤として従来
のトルエンの代わりに有利にはクロロベンゼンのようなリファイニング剤(re
finingagent)を使用し、不均一層4の微細構造を保証し、不均一層
はこの場合に500nm未満の平均粒度を有する。これにより電子供与体と電子
受容体の接触位置の数をかなり増加することができ、これは模擬的AM1.5条
件下で改良された電荷分離および約2.6%の効率上昇の結果を生じる。
する薄い移行層6を被覆し、この層は電気的に絶縁性に作用しなければならない
。この移行層はこの実施例ではアルカリ金属ハロゲン化物、すなわちフッ化リチ
ウムからなり、フッ化リチウムは2×10−6トルの真空で0.2nm/分の速
度で蒸着するが、この場合に少ない層厚により光活性層4のいかなる貫通する閉
鎖された被覆も予想できない。
ニウムを使用し、アルミニウムを電気的に絶縁性の移行層6の上に蒸着する。光
活性層4と電極5の間の電気的に絶縁性の移行層6の挿入により、電極5と活性
フォト層4の直接の境界領域では、電極5が大きな領域で直接光活性層4に隣接
していないために、光活性層4と電極5の間の電荷の移行に妨害作用する反応を
十分に回避することができるので、光活性層4から電極5への電荷担体の移行が
、移行層6が光活性層4と電極5の間に付加的なバリアを形成しない条件で改良
され、これは移行層6の層厚の制限により保証される。その際移行層6の電気的
絶縁性は、特に光活性層4から移行層6への移行領域で電荷担体の移行を阻止す
る作用が発揮されることを明らかに阻止する。
励起エネルギーで電圧Uに対して電流密度Iをプロットし、2個の電池は本発明
による移行層6の存在によってのみ異なる。本発明による光電池の特性曲線7と
移行層6を除いて一致する構造の比較セルの特性曲線8との比較から、ほぼ同じ
約5.2mA/cm2の短絡電流で770mVから810mVへの無効電圧の上
昇が測定できることが示される。付加的に充填係数が0.52から0.62に改良
するので、本発明の光電池の効率は比較セルの2.6%から3.2%に高めること
ができ、これは20%から25%までのエネルギー変換の改良に相当する。
移行層6が示される図示された実施例に限定されない。従って電気的に絶縁性の
移行層6を、孔が集まる電極2とこれに続く有機層、実施例では平滑層3の間に
備えることができる。更に電気的に絶縁性の移行層6は電極2の領域にのみ備え
ることができる。電気的に絶縁性の移行層6の作用が電子供与体として共役ポリ
マーおよび電子受容体としてフラーレンに限定されないので、本発明の作用は電
子供与体および電子受容体からなる分子の二成分層を有するすべての光電池に認
めることができる。
グラフである。
Claims (4)
- 【請求項1】 2個の分子成分、すなわち電子供与体および電子受容体、特
に共役ポリマー成分およびフラーレン成分からなる光活性層(4)および光活性
層の両側に備えられた2つの金属電極(2,5)を有する光電池において、少な
くとも電極(5)と光活性層(4)の間に多くても5nmの厚さを有する電気的
に絶縁性の移行層(6)が備えられていることを特徴とする光電池。 - 【請求項2】 移行層(6)が多くても2nmの厚さを有する請求項1記載
の光電池。 - 【請求項3】 移行層(6)が塩、特にアルカリ金属ハロゲン化物からなる
請求項1または2記載の光電池。 - 【請求項4】 移行層(6)がフッ化リチウムからなる請求項3記載の光電
池。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0073400A AT411306B (de) | 2000-04-27 | 2000-04-27 | Photovoltaische zelle mit einer photoaktiven schicht aus zwei molekularen organischen komponenten |
ATA734/2000 | 2000-04-27 | ||
AT734/2000 | 2000-04-27 | ||
PCT/AT2001/000129 WO2001084645A1 (de) | 2000-04-27 | 2001-04-27 | Photovoltaische zelle |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013089574A Division JP2013157633A (ja) | 2000-04-27 | 2013-04-22 | 光電池 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003533034A true JP2003533034A (ja) | 2003-11-05 |
JP2003533034A5 JP2003533034A5 (ja) | 2013-06-13 |
JP5517386B2 JP5517386B2 (ja) | 2014-06-11 |
Family
ID=3680147
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001581357A Expired - Lifetime JP5517386B2 (ja) | 2000-04-27 | 2001-04-27 | 光電池 |
JP2013089574A Withdrawn JP2013157633A (ja) | 2000-04-27 | 2013-04-22 | 光電池 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013089574A Withdrawn JP2013157633A (ja) | 2000-04-27 | 2013-04-22 | 光電池 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6933436B2 (ja) |
EP (1) | EP1284027A1 (ja) |
JP (2) | JP5517386B2 (ja) |
CN (1) | CN1426607A (ja) |
AT (1) | AT411306B (ja) |
AU (1) | AU2001252014A1 (ja) |
WO (1) | WO2001084645A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005277199A (ja) * | 2004-03-25 | 2005-10-06 | National Institute Of Advanced Industrial & Technology | 半導体装置用の光透過性電極、半導体装置および電極の製造方法 |
JP2007273939A (ja) * | 2005-09-06 | 2007-10-18 | Kyoto Univ | 有機薄膜光電変換素子及びその製造方法 |
WO2009119871A1 (ja) * | 2008-03-25 | 2009-10-01 | 住友化学株式会社 | 有機光電変換素子 |
WO2009142330A1 (ja) * | 2008-05-23 | 2009-11-26 | 住友化学株式会社 | 有機光電変換素子およびその製造方法 |
KR100983414B1 (ko) * | 2008-07-22 | 2010-09-20 | 성균관대학교산학협력단 | 투명 전극 표면 패터닝에 의한 유기 태양전지 제조방법 |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT411306B (de) | 2000-04-27 | 2003-11-25 | Qsel Quantum Solar Energy Linz | Photovoltaische zelle mit einer photoaktiven schicht aus zwei molekularen organischen komponenten |
AT410859B (de) * | 2000-04-27 | 2003-08-25 | Qsel Quantum Solar Energy Linz | Verfahren zum herstellen einer photovoltaischen zelle mit einer photoaktiven schicht aus zwei organischen komponenten |
AT410729B (de) * | 2000-04-27 | 2003-07-25 | Qsel Quantum Solar Energy Linz | Photovoltaische zelle mit einer photoaktiven schicht aus zwei molekularen organischen komponenten |
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JP5517386B2 (ja) | 2014-06-11 |
US20040094196A1 (en) | 2004-05-20 |
US6933436B2 (en) | 2005-08-23 |
ATA7342000A (de) | 2003-04-15 |
AU2001252014A1 (en) | 2001-11-12 |
JP2013157633A (ja) | 2013-08-15 |
EP1284027A1 (de) | 2003-02-19 |
CN1426607A (zh) | 2003-06-25 |
WO2001084645A1 (de) | 2001-11-08 |
AT411306B (de) | 2003-11-25 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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EXPY | Cancellation because of completion of term |