JP2003526067A5 - - Google Patents

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Publication number
JP2003526067A5
JP2003526067A5 JP2001531148A JP2001531148A JP2003526067A5 JP 2003526067 A5 JP2003526067 A5 JP 2003526067A5 JP 2001531148 A JP2001531148 A JP 2001531148A JP 2001531148 A JP2001531148 A JP 2001531148A JP 2003526067 A5 JP2003526067 A5 JP 2003526067A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001531148A
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Japanese (ja)
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JP2003526067A (ja
JP4488155B2 (ja
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Publication date
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Priority claimed from PCT/DE2000/003719 external-priority patent/WO2001029901A2/de
Publication of JP2003526067A publication Critical patent/JP2003526067A/ja
Publication of JP2003526067A5 publication Critical patent/JP2003526067A5/ja
Application granted granted Critical
Publication of JP4488155B2 publication Critical patent/JP4488155B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001531148A 1999-10-20 2000-10-20 少なくとも1つの被処理物を熱処理するための装置及び方法 Expired - Lifetime JP4488155B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19950575.6 1999-10-20
DE19950575 1999-10-20
PCT/DE2000/003719 WO2001029901A2 (de) 1999-10-20 2000-10-20 Vorrichtung und verfahren zum temperieren mindestens eines prozessierguts

Publications (3)

Publication Number Publication Date
JP2003526067A JP2003526067A (ja) 2003-09-02
JP2003526067A5 true JP2003526067A5 (enExample) 2010-03-11
JP4488155B2 JP4488155B2 (ja) 2010-06-23

Family

ID=7926306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001531148A Expired - Lifetime JP4488155B2 (ja) 1999-10-20 2000-10-20 少なくとも1つの被処理物を熱処理するための装置及び方法

Country Status (9)

Country Link
US (1) US6703589B1 (enExample)
EP (1) EP1277237B1 (enExample)
JP (1) JP4488155B2 (enExample)
CN (1) CN1187842C (enExample)
AT (1) ATE481740T1 (enExample)
AU (1) AU769237B2 (enExample)
DE (1) DE50015995D1 (enExample)
ES (1) ES2352314T3 (enExample)
WO (1) WO2001029901A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10359102A1 (de) * 2003-12-17 2005-07-21 Carl Zeiss Smt Ag Optische Komponente umfassend ein Material mit einer vorbestimmten Homogenität der thermischen Längsausdehnung
JP3986021B2 (ja) * 2003-12-26 2007-10-03 オリジン電気株式会社 基板の処理方法及び装置
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers
US20090050208A1 (en) * 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
JP5176364B2 (ja) * 2007-03-29 2013-04-03 日本電気株式会社 光加熱装置及び光加熱方法
DE102008022784A1 (de) * 2008-05-08 2009-11-12 Avancis Gmbh & Co. Kg Vorrichtung und Verfahren zum Tempern von Gegenständen in einer Behandlungskammer
EP2144026B1 (de) * 2008-06-20 2016-04-13 Volker Probst Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern
KR20110097908A (ko) * 2008-11-28 2011-08-31 볼커 프로브스트 반도체 층 또는 원소 셀레늄 및/또는 황으로 처리된 코팅 기판, 특히 평면 기판의 제조 방법
TWI418047B (zh) * 2009-01-07 2013-12-01 Ind Tech Res Inst Ib-iiia-via2化合物半導體薄膜之製造裝置
DE102010008084A1 (de) 2010-02-15 2011-08-18 Leybold Optics GmbH, 63755 Vorrichtung zur thermischen Behandlung von Substraten
US9333526B2 (en) * 2011-02-17 2016-05-10 Frank A. Liporace Device for coating bone plate
US9915475B2 (en) * 2011-04-12 2018-03-13 Jiaxiong Wang Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes
US20140170805A1 (en) * 2012-12-14 2014-06-19 Heliovolt Corporation Thermal Processing Utilizing Independently Controlled Elemental Reactant Vapor Pressures and/or Indirect Cooling
JP2014181882A (ja) * 2013-03-21 2014-09-29 Ngk Insulators Ltd 熱処理装置
TWI584489B (zh) * 2016-06-24 2017-05-21 Asia Neo Tech Industrial Co Ltd Method and processing device for hydrogen passivation treatment of solar cell sheet
KR101846509B1 (ko) * 2017-03-29 2018-04-09 (주)앤피에스 열원 장치 및 이를 구비하는 기판 처리 장치
CN110147032A (zh) * 2018-02-12 2019-08-20 上海微电子装备(集团)股份有限公司 掩模版移动装置、光刻机及光刻方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022835B2 (ja) 1978-08-17 1985-06-04 株式会社村田製作所 圧電性磁器の製造方法
JPS57183041A (en) 1981-05-06 1982-11-11 Nec Corp Annealing method for chemical semiconductor
JPS61129834A (ja) * 1984-11-28 1986-06-17 Dainippon Screen Mfg Co Ltd 光照射型熱処理装置
US5011794A (en) 1989-05-01 1991-04-30 At&T Bell Laboratories Procedure for rapid thermal annealing of implanted semiconductors
WO1994007269A1 (de) 1992-09-22 1994-03-31 Siemens Aktiengesellschaft Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
JPH0778830A (ja) * 1993-09-07 1995-03-20 Hitachi Ltd 半導体製造装置
JP2875768B2 (ja) 1994-11-30 1999-03-31 新日本無線株式会社 半導体基板の熱処理方法
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US5851929A (en) 1996-01-04 1998-12-22 Micron Technology, Inc. Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source
DE19711702C1 (de) 1997-03-20 1998-06-25 Siemens Ag Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb
US6171982B1 (en) 1997-12-26 2001-01-09 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same

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