JP2003522424A - 研磨組成物 - Google Patents

研磨組成物

Info

Publication number
JP2003522424A
JP2003522424A JP2001557972A JP2001557972A JP2003522424A JP 2003522424 A JP2003522424 A JP 2003522424A JP 2001557972 A JP2001557972 A JP 2001557972A JP 2001557972 A JP2001557972 A JP 2001557972A JP 2003522424 A JP2003522424 A JP 2003522424A
Authority
JP
Japan
Prior art keywords
polishing
polishing composition
insulating layer
silanol
soluble
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001557972A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003522424A5 (https=
Inventor
ラック，クレイグ・ディー
トーマス，テレンス・エム
（クリスティーン） イェ，チャンチ
Original Assignee
ロデール ホールディングス インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ロデール ホールディングス インコーポレイテッド filed Critical ロデール ホールディングス インコーポレイテッド
Publication of JP2003522424A publication Critical patent/JP2003522424A/ja
Publication of JP2003522424A5 publication Critical patent/JP2003522424A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
JP2001557972A 2000-02-02 2001-02-02 研磨組成物 Pending JP2003522424A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17967900P 2000-02-02 2000-02-02
US60/179,679 2000-02-02
PCT/US2001/003367 WO2001057150A1 (en) 2000-02-02 2001-02-02 Polishing composition

Publications (2)

Publication Number Publication Date
JP2003522424A true JP2003522424A (ja) 2003-07-22
JP2003522424A5 JP2003522424A5 (https=) 2008-03-13

Family

ID=22657533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001557972A Pending JP2003522424A (ja) 2000-02-02 2001-02-02 研磨組成物

Country Status (6)

Country Link
US (1) US7070485B2 (https=)
EP (1) EP1263906A1 (https=)
JP (1) JP2003522424A (https=)
KR (1) KR100756469B1 (https=)
TW (1) TW572979B (https=)
WO (1) WO2001057150A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009540575A (ja) * 2006-06-07 2009-11-19 キャボット マイクロエレクトロニクス コーポレイション 窒化シリコン材料を研磨するための組成物および方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7524346B2 (en) * 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
US7037184B2 (en) 2003-01-22 2006-05-02 Raytech Innovation Solutions, Llc Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US6852020B2 (en) 2003-01-22 2005-02-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same
WO2004040633A1 (en) * 2002-10-25 2004-05-13 Intersurface Dynamics, Inc. Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics
US8025808B2 (en) * 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
JP4339034B2 (ja) * 2003-07-01 2009-10-07 花王株式会社 研磨液組成物
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
CN101588894B (zh) * 2006-12-20 2013-03-27 圣戈本陶瓷及塑料股份有限公司 机械加工无机非金属工件的方法
MY150487A (en) * 2008-09-19 2014-01-30 Cabot Microelectronics Corp Barrier slurry for low-k dielectrics.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11116948A (ja) * 1997-07-28 1999-04-27 Cabot Corp タングステンの蝕刻抑制剤を含むポリシング組成物
JPH11345789A (ja) * 1998-06-01 1999-12-14 Toshiba Corp 研磨方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338377A (en) * 1979-10-10 1982-07-06 Minnesota Mining And Manufacturing Company Sulfonato-organosilanol compounds and aqueous solutions thereof
US4480009A (en) * 1980-12-15 1984-10-30 M&T Chemicals Inc. Siloxane-containing polymers
US4537914A (en) * 1983-07-06 1985-08-27 Creative Products Resource Associates, Ltd. Floor cleaning and waxing composition
JPS61136909A (ja) * 1984-12-04 1986-06-24 Mitsubishi Chem Ind Ltd 無水ケイ酸の水分散液組成物
DE3735158A1 (de) 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
JP2714411B2 (ja) 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5614444A (en) 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5681055A (en) * 1995-09-28 1997-10-28 Morton International, Inc. Side-impact airbag module assembly incorporating combination airbag inflator and module housing
US5645736A (en) * 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
KR970042941A (ko) * 1995-12-29 1997-07-26 베일리 웨인 피 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
JP4257687B2 (ja) * 1999-01-11 2009-04-22 株式会社トクヤマ 研磨剤および研磨方法
US6582623B1 (en) 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
US6602112B2 (en) * 2000-01-18 2003-08-05 Rodel Holdings, Inc. Dissolution of metal particles produced by polishing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11116948A (ja) * 1997-07-28 1999-04-27 Cabot Corp タングステンの蝕刻抑制剤を含むポリシング組成物
JPH11345789A (ja) * 1998-06-01 1999-12-14 Toshiba Corp 研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009540575A (ja) * 2006-06-07 2009-11-19 キャボット マイクロエレクトロニクス コーポレイション 窒化シリコン材料を研磨するための組成物および方法

Also Published As

Publication number Publication date
KR20020075902A (ko) 2002-10-07
US20010044264A1 (en) 2001-11-22
TW572979B (en) 2004-01-21
EP1263906A1 (en) 2002-12-11
KR100756469B1 (ko) 2007-09-07
WO2001057150A1 (en) 2001-08-09
US7070485B2 (en) 2006-07-04

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