KR100756469B1 - 연마 조성물 - Google Patents

연마 조성물 Download PDF

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Publication number
KR100756469B1
KR100756469B1 KR1020027009918A KR20027009918A KR100756469B1 KR 100756469 B1 KR100756469 B1 KR 100756469B1 KR 1020027009918 A KR1020027009918 A KR 1020027009918A KR 20027009918 A KR20027009918 A KR 20027009918A KR 100756469 B1 KR100756469 B1 KR 100756469B1
Authority
KR
South Korea
Prior art keywords
polishing
polishing composition
silanol
dielectric layer
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020027009918A
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English (en)
Korean (ko)
Other versions
KR20020075902A (ko
Inventor
랙크레이그디
토마스테렌스엠
예쳰추(크리스틴)
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20020075902A publication Critical patent/KR20020075902A/ko
Application granted granted Critical
Publication of KR100756469B1 publication Critical patent/KR100756469B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
KR1020027009918A 2000-02-02 2001-02-02 연마 조성물 Expired - Fee Related KR100756469B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17967900P 2000-02-02 2000-02-02
US60/179,679 2000-02-02

Publications (2)

Publication Number Publication Date
KR20020075902A KR20020075902A (ko) 2002-10-07
KR100756469B1 true KR100756469B1 (ko) 2007-09-07

Family

ID=22657533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027009918A Expired - Fee Related KR100756469B1 (ko) 2000-02-02 2001-02-02 연마 조성물

Country Status (6)

Country Link
US (1) US7070485B2 (https=)
EP (1) EP1263906A1 (https=)
JP (1) JP2003522424A (https=)
KR (1) KR100756469B1 (https=)
TW (1) TW572979B (https=)
WO (1) WO2001057150A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7524346B2 (en) * 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
US7037184B2 (en) 2003-01-22 2006-05-02 Raytech Innovation Solutions, Llc Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US6852020B2 (en) 2003-01-22 2005-02-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same
WO2004040633A1 (en) * 2002-10-25 2004-05-13 Intersurface Dynamics, Inc. Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics
US8025808B2 (en) * 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
JP4339034B2 (ja) * 2003-07-01 2009-10-07 花王株式会社 研磨液組成物
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
CN101588894B (zh) * 2006-12-20 2013-03-27 圣戈本陶瓷及塑料股份有限公司 机械加工无机非金属工件的方法
MY150487A (en) * 2008-09-19 2014-01-30 Cabot Microelectronics Corp Barrier slurry for low-k dielectrics.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968381A (en) * 1987-10-16 1990-11-06 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Method of haze-free polishing for semiconductor wafers

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338377A (en) * 1979-10-10 1982-07-06 Minnesota Mining And Manufacturing Company Sulfonato-organosilanol compounds and aqueous solutions thereof
US4480009A (en) * 1980-12-15 1984-10-30 M&T Chemicals Inc. Siloxane-containing polymers
US4537914A (en) * 1983-07-06 1985-08-27 Creative Products Resource Associates, Ltd. Floor cleaning and waxing composition
JPS61136909A (ja) * 1984-12-04 1986-06-24 Mitsubishi Chem Ind Ltd 無水ケイ酸の水分散液組成物
JP2714411B2 (ja) 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5614444A (en) 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5681055A (en) * 1995-09-28 1997-10-28 Morton International, Inc. Side-impact airbag module assembly incorporating combination airbag inflator and module housing
US5645736A (en) * 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
KR970042941A (ko) * 1995-12-29 1997-07-26 베일리 웨인 피 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JPH11345789A (ja) * 1998-06-01 1999-12-14 Toshiba Corp 研磨方法
JP4257687B2 (ja) * 1999-01-11 2009-04-22 株式会社トクヤマ 研磨剤および研磨方法
US6582623B1 (en) 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
US6602112B2 (en) * 2000-01-18 2003-08-05 Rodel Holdings, Inc. Dissolution of metal particles produced by polishing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968381A (en) * 1987-10-16 1990-11-06 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Method of haze-free polishing for semiconductor wafers

Also Published As

Publication number Publication date
KR20020075902A (ko) 2002-10-07
US20010044264A1 (en) 2001-11-22
TW572979B (en) 2004-01-21
EP1263906A1 (en) 2002-12-11
JP2003522424A (ja) 2003-07-22
WO2001057150A1 (en) 2001-08-09
US7070485B2 (en) 2006-07-04

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