JP2003521123A - 半導体素子に銅相互接続を形成する方法 - Google Patents
半導体素子に銅相互接続を形成する方法Info
- Publication number
- JP2003521123A JP2003521123A JP2001555133A JP2001555133A JP2003521123A JP 2003521123 A JP2003521123 A JP 2003521123A JP 2001555133 A JP2001555133 A JP 2001555133A JP 2001555133 A JP2001555133 A JP 2001555133A JP 2003521123 A JP2003521123 A JP 2003521123A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- copper
- forming
- layer
- sacrificial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010949 copper Substances 0.000 title claims abstract description 203
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 150
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 89
- 239000004065 semiconductor Substances 0.000 title description 26
- 238000000137 annealing Methods 0.000 claims abstract description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 28
- 238000005240 physical vapour deposition Methods 0.000 claims description 27
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 23
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 23
- 239000003989 dielectric material Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims 6
- 238000000059 patterning Methods 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 2
- 238000010297 mechanical methods and process Methods 0.000 claims 1
- 230000005226 mechanical processes and functions Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 42
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 230000009977 dual effect Effects 0.000 description 13
- 239000004020 conductor Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 244000132059 Carica parviflora Species 0.000 description 7
- 235000014653 Carica parviflora Nutrition 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 239000010432 diamond Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- HCVRBNOJROSOLX-UHFFFAOYSA-N dihydroxy(methylidene)silane Chemical compound O[Si](O)=C HCVRBNOJROSOLX-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 101100366710 Arabidopsis thaliana SSL12 gene Proteins 0.000 description 1
- 101100366563 Panax ginseng SS13 gene Proteins 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/493,320 | 2000-01-28 | ||
| US09/493,320 US6303486B1 (en) | 2000-01-28 | 2000-01-28 | Method of fabricating copper-based semiconductor devices using a sacrificial dielectric layer and an unconstrained copper anneal |
| PCT/US2000/025679 WO2001056077A1 (en) | 2000-01-28 | 2000-09-20 | Method of fabricating copper interconnections in semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003521123A true JP2003521123A (ja) | 2003-07-08 |
| JP2003521123A5 JP2003521123A5 (ko) | 2007-10-25 |
Family
ID=23959740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001555133A Pending JP2003521123A (ja) | 2000-01-28 | 2000-09-20 | 半導体素子に銅相互接続を形成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6303486B1 (ko) |
| EP (1) | EP1250715A1 (ko) |
| JP (1) | JP2003521123A (ko) |
| KR (1) | KR100670227B1 (ko) |
| WO (1) | WO2001056077A1 (ko) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005150681A (ja) * | 2003-11-11 | 2005-06-09 | Hynix Semiconductor Inc | 半導体素子の金属配線形成方法 |
| WO2012001978A1 (ja) * | 2010-07-01 | 2012-01-05 | パナソニック株式会社 | 不揮発性記憶素子及びその製造方法 |
| JPWO2012140887A1 (ja) * | 2011-04-14 | 2014-07-28 | パナソニック株式会社 | 不揮発性記憶素子およびその製造方法 |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6332900B1 (en) * | 1999-02-08 | 2001-12-25 | Wilson Greatbatch Ltd. | Physical vapor deposited electrode component and method of manufacture |
| US6355555B1 (en) * | 2000-01-28 | 2002-03-12 | Advanced Micro Devices, Inc. | Method of fabricating copper-based semiconductor devices using a sacrificial dielectric layer |
| US6858937B2 (en) * | 2000-03-02 | 2005-02-22 | Micron Technology, Inc. | Backend metallization method and device obtained therefrom |
| US6373135B1 (en) * | 2000-09-14 | 2002-04-16 | Infineon Technologies Ag | Semiconductor structure and method of fabrication |
| US6635564B1 (en) * | 2000-09-14 | 2003-10-21 | Infineon Technologies Ag | Semiconductor structure and method of fabrication including forming aluminum columns |
| US6429118B1 (en) * | 2000-09-18 | 2002-08-06 | Taiwan Semiconductor Manufacturing Company | Elimination of electrochemical deposition copper line damage for damascene processing |
| US6689684B1 (en) * | 2001-02-15 | 2004-02-10 | Advanced Micro Devices, Inc. | Cu damascene interconnections using barrier/capping layer |
| US6506668B1 (en) * | 2001-06-22 | 2003-01-14 | Advanced Micro Devices, Inc. | Utilization of annealing enhanced or repaired seed layer to improve copper interconnect reliability |
| US6686273B2 (en) * | 2001-09-26 | 2004-02-03 | Sharp Laboratories Of America, Inc. | Method of fabricating copper interconnects with very low-k inter-level insulator |
| US20080121343A1 (en) | 2003-12-31 | 2008-05-29 | Microfabrica Inc. | Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates |
| US20050202667A1 (en) * | 2001-12-03 | 2005-09-15 | University Of Southern California | Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates |
| US6706629B1 (en) | 2003-01-07 | 2004-03-16 | Taiwan Semiconductor Manufacturing Company | Barrier-free copper interconnect |
| KR100539444B1 (ko) * | 2003-07-11 | 2005-12-27 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속배선 형성방법 |
| FR2859822B1 (fr) * | 2003-09-16 | 2006-05-05 | Commissariat Energie Atomique | Structure d'interconnexion a faible constante dielectrique |
| US20050130407A1 (en) * | 2003-12-12 | 2005-06-16 | Jui-Neng Tu | Dual damascene process for forming a multi-layer low-k dielectric interconnect |
| US7169659B2 (en) * | 2004-08-31 | 2007-01-30 | Texas Instruments Incorporated | Method to selectively recess ETCH regions on a wafer surface using capoly as a mask |
| US7312146B2 (en) * | 2004-09-21 | 2007-12-25 | Applied Materials, Inc. | Semiconductor device interconnect fabricating techniques |
| US7129127B2 (en) * | 2004-09-24 | 2006-10-31 | Texas Instruments Incorporated | Integration scheme to improve NMOS with poly cap while mitigating PMOS degradation |
| US7172936B2 (en) * | 2004-09-24 | 2007-02-06 | Texas Instruments Incorporated | Method to selectively strain NMOS devices using a cap poly layer |
| KR100613346B1 (ko) * | 2004-12-15 | 2006-08-21 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
| US7468545B2 (en) * | 2005-05-06 | 2008-12-23 | Megica Corporation | Post passivation structure for a semiconductor device and packaging process for same |
| US7582556B2 (en) * | 2005-06-24 | 2009-09-01 | Megica Corporation | Circuitry component and method for forming the same |
| US7422975B2 (en) * | 2005-08-18 | 2008-09-09 | Sony Corporation | Composite inter-level dielectric structure for an integrated circuit |
| US20070194450A1 (en) * | 2006-02-21 | 2007-08-23 | Tyberg Christy S | BEOL compatible FET structure |
| US9613852B2 (en) | 2014-03-21 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method making the same |
| US10629478B2 (en) | 2017-08-22 | 2020-04-21 | International Business Machines Corporation | Dual-damascene formation with dielectric spacer and thin liner |
| US10903111B2 (en) * | 2019-03-20 | 2021-01-26 | International Business Machines Corporation | Semiconductor device with linerless contacts |
| US11177170B2 (en) | 2020-01-16 | 2021-11-16 | International Business Machines Corporation | Removal of barrier and liner layers from a bottom of a via |
| US11177166B2 (en) * | 2020-04-17 | 2021-11-16 | International Business Machines Corporation | Etch stop layer removal for capacitance reduction in damascene top via integration |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11126820A (ja) * | 1997-08-21 | 1999-05-11 | Matsushita Electron Corp | 半導体装置とその製造方法 |
| WO1999054934A1 (en) * | 1998-04-22 | 1999-10-28 | Cvc Products, Inc. | Ultra high-speed chip interconnect using free-space dielectrics |
| JP2003518325A (ja) * | 1999-01-08 | 2003-06-03 | ラム・リサーチ・コーポレーション | ダマシンによるメタリゼーション層を形成するためのリソグラフィックな方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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- 2000-09-20 KR KR1020027009687A patent/KR100670227B1/ko not_active IP Right Cessation
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| JP2005150681A (ja) * | 2003-11-11 | 2005-06-09 | Hynix Semiconductor Inc | 半導体素子の金属配線形成方法 |
| WO2012001978A1 (ja) * | 2010-07-01 | 2012-01-05 | パナソニック株式会社 | 不揮発性記憶素子及びその製造方法 |
| JP5436669B2 (ja) * | 2010-07-01 | 2014-03-05 | パナソニック株式会社 | 不揮発性記憶素子及びその製造方法 |
| US8785238B2 (en) | 2010-07-01 | 2014-07-22 | Panasonic Corporation | Nonvolatile memory element and method for manufacturing same |
| JPWO2012140887A1 (ja) * | 2011-04-14 | 2014-07-28 | パナソニック株式会社 | 不揮発性記憶素子およびその製造方法 |
| JP5636092B2 (ja) * | 2011-04-14 | 2014-12-03 | パナソニック株式会社 | 不揮発性記憶素子およびその製造方法 |
| US8921200B2 (en) | 2011-04-14 | 2014-12-30 | Panasonic Corporation | Nonvolatile storage element and method of manufacturing thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001056077A1 (en) | 2001-08-02 |
| KR20020074216A (ko) | 2002-09-28 |
| US6303486B1 (en) | 2001-10-16 |
| EP1250715A1 (en) | 2002-10-23 |
| KR100670227B1 (ko) | 2007-01-17 |
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