JP2003510828A5 - - Google Patents

Download PDF

Info

Publication number
JP2003510828A5
JP2003510828A5 JP2001526874A JP2001526874A JP2003510828A5 JP 2003510828 A5 JP2003510828 A5 JP 2003510828A5 JP 2001526874 A JP2001526874 A JP 2001526874A JP 2001526874 A JP2001526874 A JP 2001526874A JP 2003510828 A5 JP2003510828 A5 JP 2003510828A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001526874A
Other versions
JP2003510828A (ja
Filing date
Publication date
Priority claimed from US09/409,464 external-priority patent/US6303506B1/en
Application filed filed Critical
Publication of JP2003510828A publication Critical patent/JP2003510828A/ja
Publication of JP2003510828A5 publication Critical patent/JP2003510828A5/ja
Pending legal-status Critical Current

Links

JP2001526874A 1999-09-30 2000-09-05 二酸化珪素ｃｍｐ工程で傷および欠陥を減少するかまたは取り除くための組成物および方法 Pending JP2003510828A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/409,464 US6303506B1 (en) 1999-09-30 1999-09-30 Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process
US09/409,464 1999-09-30
PCT/US2000/024342 WO2001023486A1 (en) 1999-09-30 2000-09-05 Compositions for and methods of reducing/eliminating scratches and defects in silicon dioxide cmp process

Publications (2)

Publication Number Publication Date
JP2003510828A JP2003510828A (ja) 2003-03-18
JP2003510828A5 true JP2003510828A5 (ja) 2007-10-04

Family

ID=23620607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001526874A Pending JP2003510828A (ja) 1999-09-30 2000-09-05 二酸化珪素ｃｍｐ工程で傷および欠陥を減少するかまたは取り除くための組成物および方法

Country Status (8)

Country Link
US (1) US6303506B1 (ja)
EP (1) EP1218466B1 (ja)
JP (1) JP2003510828A (ja)
KR (1) KR100643975B1 (ja)
CN (1) CN1211448C (ja)
DE (1) DE60003703T2 (ja)
HK (1) HK1046922A1 (ja)
WO (1) WO2001023486A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
TW471057B (en) * 2000-06-09 2002-01-01 Macronix Int Co Ltd Method for reducing dishing effect during chemical mechanical polishing
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
KR100396881B1 (ko) * 2000-10-16 2003-09-02 삼성전자주식회사 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법
US6800218B2 (en) 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6677239B2 (en) * 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
KR100558194B1 (ko) * 2003-10-17 2006-03-10 삼성전자주식회사 높은 식각 선택비를 갖는 식각 조성물, 이의 제조 방법,이를 이용한 산화막의 선택적 식각 방법 및 반도체 장치의제조 방법
JP4799843B2 (ja) * 2003-10-17 2011-10-26 三星電子株式会社 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法
KR100596845B1 (ko) * 2003-10-22 2006-07-04 주식회사 하이닉스반도체 반도체 소자의 콘택 형성 방법
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
JP2014216464A (ja) * 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US11193044B2 (en) * 2016-08-26 2021-12-07 Ferro Corporation Slurry composition and method of selective silica polishing

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3426077A (en) * 1964-04-21 1969-02-04 Gaf Corp Low foaming biodegradable surfactant compositions
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
US4588474A (en) 1981-02-03 1986-05-13 Chem-Tronics, Incorporated Chemical milling processes and etchants therefor
US5607718A (en) 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5567300A (en) 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
JP3972133B2 (ja) * 1995-11-15 2007-09-05 ダイキン工業株式会社 ウエハ処理液及びその製造方法
US5769689A (en) 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JPH10102040A (ja) * 1996-09-30 1998-04-21 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法

Similar Documents

Publication Publication Date Title
BE2016C059I2 (ja)
BE2016C018I2 (ja)
BE2014C009I2 (ja)
BE2012C016I2 (ja)
BE2010C018I2 (ja)
BE2009C057I2 (ja)
BRPI0113085B8 (ja)
BRPI0112928B8 (ja)
BE2014C025I2 (ja)
CH694022C1 (ja)
JP2002055806A5 (ja)
CN300955183S (zh) 连接件
JP2002200564A5 (ja)
BRPI0000763B8 (ja)
ECSMU014119U (ja)
CN3134542S (ja)
CN3141399S (ja)
CN3147660S (ja)
AU2000280296A8 (ja)
BY4905C1 (ja)
BY5592C1 (ja)
AU2000278679A8 (ja)
AU2000278560A8 (ja)
CN3145855S (ja)
CN3135513S (ja)