JP2003509839A - 発光スペクトルの主成分分析を用いてエッチ終点を決定する方法 - Google Patents
発光スペクトルの主成分分析を用いてエッチ終点を決定する方法Info
- Publication number
- JP2003509839A JP2003509839A JP2001522570A JP2001522570A JP2003509839A JP 2003509839 A JP2003509839 A JP 2003509839A JP 2001522570 A JP2001522570 A JP 2001522570A JP 2001522570 A JP2001522570 A JP 2001522570A JP 2003509839 A JP2003509839 A JP 2003509839A
- Authority
- JP
- Japan
- Prior art keywords
- matrix
- score
- etch
- oes
- principal components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 description 41
- 229940050561 matrix product Drugs 0.000 description 35
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 5
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07K—PEPTIDES
- C07K14/00—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
- C07K14/195—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from bacteria
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
- A61K39/00—Medicinal preparations containing antigens or antibodies
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/32—Operator till task planning
- G05B2219/32187—Correlation between controlling parameters for influence on quality parameters
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45031—Manufacturing semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- Genetics & Genomics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Gastroenterology & Hepatology (AREA)
- Medicinal Chemistry (AREA)
- Molecular Biology (AREA)
- Proteomics, Peptides & Aminoacids (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Biophysics (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15289799P | 1999-09-08 | 1999-09-08 | |
| US60/152,879 | 1999-09-08 | ||
| US16386899P | 1999-11-05 | 1999-11-05 | |
| US60/163,868 | 1999-11-05 | ||
| US09/491,845 US6582618B1 (en) | 1999-09-08 | 2000-01-26 | Method of determining etch endpoint using principal components analysis of optical emission spectra |
| US09/491,845 | 2000-01-26 | ||
| PCT/US2000/016100 WO2001018845A1 (en) | 1999-09-08 | 2000-06-13 | Method of determining etch endpoint using principal components analysis of optical emission spectra |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003509839A true JP2003509839A (ja) | 2003-03-11 |
| JP2003509839A5 JP2003509839A5 (enExample) | 2007-06-14 |
Family
ID=27387343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001522570A Pending JP2003509839A (ja) | 1999-09-08 | 2000-06-13 | 発光スペクトルの主成分分析を用いてエッチ終点を決定する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6582618B1 (enExample) |
| EP (1) | EP1210724B1 (enExample) |
| JP (1) | JP2003509839A (enExample) |
| DE (1) | DE60041408D1 (enExample) |
| WO (1) | WO2001018845A1 (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007059585A (ja) * | 2005-08-24 | 2007-03-08 | Tokyo Electron Ltd | プラズマ処理装置の運転状態判定方法、運転状態判定装置、プログラム及び記憶媒体 |
| JP2007266641A (ja) * | 2002-06-12 | 2007-10-11 | Semisysco Co Ltd | 半導体乾式エッチング工程でのエッチング終了点の検出方法 |
| JP2015532544A (ja) * | 2012-10-17 | 2015-11-09 | 東京エレクトロン株式会社 | 多変量解析を用いたプラズマエンドポイント検出 |
| JP2020181959A (ja) * | 2019-04-26 | 2020-11-05 | 東京エレクトロン株式会社 | 学習方法、管理装置および管理プログラム |
| WO2022014392A1 (ja) * | 2020-07-16 | 2022-01-20 | 東京エレクトロン株式会社 | データ処理装置、データ処理システム、データ処理方法及びデータ処理プログラム |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1197130C (zh) * | 2000-07-04 | 2005-04-13 | 东京毅力科创株式会社 | 处理装置运转监视方法,评价方法及异常检测方法 |
| JP3708031B2 (ja) | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
| US7505879B2 (en) | 2002-06-05 | 2009-03-17 | Tokyo Electron Limited | Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus |
| WO2003105210A1 (ja) * | 2002-06-05 | 2003-12-18 | 東京エレクトロン株式会社 | 処理装置の多変量解析モデル式作成方法、処理装置用の多変量解析方法、処理装置の制御装置、処理装置の制御システム |
| TWI259546B (en) | 2002-06-28 | 2006-08-01 | Tokyo Electron Ltd | Method and system for predicting process performance using material processing tool and sensor data |
| US6723574B1 (en) * | 2002-09-26 | 2004-04-20 | Lam Research Corporation | Method for quantifying uniformity patterns and including expert knowledge for tool development and control |
| US6915177B2 (en) * | 2002-09-30 | 2005-07-05 | Advanced Micro Devices, Inc. | Comprehensive integrated lithographic process control system based on product design and yield feedback system |
| US6927076B2 (en) * | 2002-10-05 | 2005-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for recovering a plasma process |
| TWI240326B (en) * | 2002-10-31 | 2005-09-21 | Tokyo Electron Ltd | Method and apparatus for determining an etch property using an endpoint signal |
| ATE415702T1 (de) * | 2003-05-09 | 2008-12-15 | Unaxis Usa Inc | Endpunkt-erkennung in einem zeitlich gemultiplexten verfahren unter verwendung eines hüllkurvenalgorithmus |
| US20060006139A1 (en) * | 2003-05-09 | 2006-01-12 | David Johnson | Selection of wavelengths for end point in a time division multiplexed process |
| US6952657B2 (en) * | 2003-09-10 | 2005-10-04 | Peak Sensor Systems Llc | Industrial process fault detection using principal component analysis |
| US6980873B2 (en) | 2004-04-23 | 2005-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment |
| US7437404B2 (en) * | 2004-05-20 | 2008-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for improving equipment communication in semiconductor manufacturing equipment |
| US20060000799A1 (en) * | 2004-06-30 | 2006-01-05 | Hyun-Ho Doh | Methods and apparatus for determining endpoint in a plasma processing system |
| US8676538B2 (en) * | 2004-11-02 | 2014-03-18 | Advanced Micro Devices, Inc. | Adjusting weighting of a parameter relating to fault detection based on a detected fault |
| US7695984B1 (en) | 2005-04-20 | 2010-04-13 | Pivotal Systems Corporation | Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes |
| US7879732B2 (en) * | 2007-12-18 | 2011-02-01 | Chartered Semiconductor Manufacturing Ltd. | Thin film etching method and semiconductor device fabrication using same |
| US9997325B2 (en) | 2008-07-17 | 2018-06-12 | Verity Instruments, Inc. | Electron beam exciter for use in chemical analysis in processing systems |
| US20110168671A1 (en) * | 2010-01-08 | 2011-07-14 | International Business Machines Corporation | Process control using signal representative of a throttle valve position |
| DE102010028461B4 (de) * | 2010-04-30 | 2014-07-10 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels |
| TWI447828B (zh) * | 2011-06-22 | 2014-08-01 | Inotera Memories Inc | 製程原始資料的壓縮方法及壓縮系統 |
| US10692705B2 (en) | 2015-11-16 | 2020-06-23 | Tokyo Electron Limited | Advanced optical sensor and method for detecting an optical event in a light emission signal in a plasma chamber |
| US10522429B2 (en) | 2015-11-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device |
| SG11201808603VA (en) | 2016-03-31 | 2018-10-30 | Tokyo Electron Ltd | Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy |
| US10453653B2 (en) | 2016-09-02 | 2019-10-22 | Tokyo Electron Limited | Endpoint detection algorithm for atomic layer etching (ALE) |
| JP7112620B2 (ja) | 2016-11-18 | 2022-08-04 | 東京エレクトロン株式会社 | 製造プロセスにおける粒子によって誘発されるアークの検出のための方法および装置 |
| US10262910B2 (en) * | 2016-12-23 | 2019-04-16 | Lam Research Corporation | Method of feature exaction from time-series of spectra to control endpoint of process |
| CN110431655A (zh) | 2017-03-17 | 2019-11-08 | 东京毅力科创株式会社 | 用于蚀刻度量改进的表面改性控制 |
| US11328964B2 (en) | 2018-12-13 | 2022-05-10 | Applied Materials, Inc. | Prescriptive analytics in highly collinear response space |
| SG11202111021UA (en) | 2019-05-23 | 2021-11-29 | Tokyo Electron Ltd | Optical diagnostics of semiconductor process using hyperspectral imaging |
| US10910201B1 (en) * | 2019-08-22 | 2021-02-02 | Tokyo Electron Limited | Synthetic wavelengths for endpoint detection in plasma etching |
| US12489022B2 (en) | 2020-08-12 | 2025-12-02 | Applied Materials, Inc. | In-situ etch rate and etch rate uniformity detection system |
| US11830779B2 (en) | 2020-08-12 | 2023-11-28 | Applied Materials, Inc. | In-situ etch material selectivity detection system |
| US12072267B2 (en) * | 2020-08-31 | 2024-08-27 | Applied Materials, Inc. | Method and hardware for post maintenance vacuum recovery system |
| US12306044B2 (en) | 2022-09-20 | 2025-05-20 | Tokyo Electron Limited | Optical emission spectroscopy for advanced process characterization |
| US12362158B2 (en) | 2022-10-25 | 2025-07-15 | Tokyo Electron Limited | Method for OES data collection and endpoint detection |
| US12158374B2 (en) | 2022-10-25 | 2024-12-03 | Tokyo Electron Limited | Time-resolved OES data collection |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999021210A1 (en) * | 1997-10-23 | 1999-04-29 | Massachusetts Institute Of Technology | Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra |
| JP2000331985A (ja) * | 1999-05-18 | 2000-11-30 | Tokyo Electron Ltd | 終点検出方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5121337A (en) | 1990-10-15 | 1992-06-09 | Exxon Research And Engineering Company | Method for correcting spectral data for data due to the spectral measurement process itself and estimating unknown property and/or composition data of a sample using such method |
| US5288367A (en) | 1993-02-01 | 1994-02-22 | International Business Machines Corporation | End-point detection |
| US5479340A (en) | 1993-09-20 | 1995-12-26 | Sematech, Inc. | Real time control of plasma etch utilizing multivariate statistical analysis |
| US5658423A (en) | 1995-11-27 | 1997-08-19 | International Business Machines Corporation | Monitoring and controlling plasma processes via optical emission using principal component analysis |
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- 2000-06-13 EP EP00946783A patent/EP1210724B1/en not_active Expired - Lifetime
- 2000-06-13 DE DE60041408T patent/DE60041408D1/de not_active Expired - Lifetime
- 2000-06-13 JP JP2001522570A patent/JP2003509839A/ja active Pending
- 2000-06-13 WO PCT/US2000/016100 patent/WO2001018845A1/en not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO1999021210A1 (en) * | 1997-10-23 | 1999-04-29 | Massachusetts Institute Of Technology | Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007266641A (ja) * | 2002-06-12 | 2007-10-11 | Semisysco Co Ltd | 半導体乾式エッチング工程でのエッチング終了点の検出方法 |
| JP2007059585A (ja) * | 2005-08-24 | 2007-03-08 | Tokyo Electron Ltd | プラズマ処理装置の運転状態判定方法、運転状態判定装置、プログラム及び記憶媒体 |
| JP2015532544A (ja) * | 2012-10-17 | 2015-11-09 | 東京エレクトロン株式会社 | 多変量解析を用いたプラズマエンドポイント検出 |
| JP2020181959A (ja) * | 2019-04-26 | 2020-11-05 | 東京エレクトロン株式会社 | 学習方法、管理装置および管理プログラム |
| US11556853B2 (en) | 2019-04-26 | 2023-01-17 | Tokyo Electron Limited | Learning method, management device, and management program |
| WO2022014392A1 (ja) * | 2020-07-16 | 2022-01-20 | 東京エレクトロン株式会社 | データ処理装置、データ処理システム、データ処理方法及びデータ処理プログラム |
| JPWO2022014392A1 (enExample) * | 2020-07-16 | 2022-01-20 | ||
| CN115803850A (zh) * | 2020-07-16 | 2023-03-14 | 东京毅力科创株式会社 | 数据处理装置、数据处理系统、数据处理方法以及数据处理程序 |
| JP7427788B2 (ja) | 2020-07-16 | 2024-02-05 | 東京エレクトロン株式会社 | データ処理装置、データ処理システム、データ処理方法及びデータ処理プログラム |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1210724A1 (en) | 2002-06-05 |
| WO2001018845A1 (en) | 2001-03-15 |
| EP1210724B1 (en) | 2009-01-14 |
| US6582618B1 (en) | 2003-06-24 |
| DE60041408D1 (de) | 2009-03-05 |
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