DE60041408D1 - Verfahren zur bestimmung des plasmaätzendpunktes unter verwendung der hauptkomponentenanalyse von optischen spektren - Google Patents

Verfahren zur bestimmung des plasmaätzendpunktes unter verwendung der hauptkomponentenanalyse von optischen spektren

Info

Publication number
DE60041408D1
DE60041408D1 DE60041408T DE60041408T DE60041408D1 DE 60041408 D1 DE60041408 D1 DE 60041408D1 DE 60041408 T DE60041408 T DE 60041408T DE 60041408 T DE60041408 T DE 60041408T DE 60041408 D1 DE60041408 D1 DE 60041408D1
Authority
DE
Germany
Prior art keywords
plasma
determining
main component
component analysis
optical spectra
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041408T
Other languages
German (de)
English (en)
Inventor
Anthony John Toprac
Hongyu Yue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE60041408D1 publication Critical patent/DE60041408D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K14/00—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
    • C07K14/195—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from bacteria
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K39/00—Medicinal preparations containing antigens or antibodies
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/32—Operator till task planning
    • G05B2219/32187—Correlation between controlling parameters for influence on quality parameters
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Genetics & Genomics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Gastroenterology & Hepatology (AREA)
  • Medicinal Chemistry (AREA)
  • Molecular Biology (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Biophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
DE60041408T 1999-09-08 2000-06-13 Verfahren zur bestimmung des plasmaätzendpunktes unter verwendung der hauptkomponentenanalyse von optischen spektren Expired - Lifetime DE60041408D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15289799P 1999-09-08 1999-09-08
US16386899P 1999-11-05 1999-11-05
US09/491,845 US6582618B1 (en) 1999-09-08 2000-01-26 Method of determining etch endpoint using principal components analysis of optical emission spectra
PCT/US2000/016100 WO2001018845A1 (en) 1999-09-08 2000-06-13 Method of determining etch endpoint using principal components analysis of optical emission spectra

Publications (1)

Publication Number Publication Date
DE60041408D1 true DE60041408D1 (de) 2009-03-05

Family

ID=27387343

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041408T Expired - Lifetime DE60041408D1 (de) 1999-09-08 2000-06-13 Verfahren zur bestimmung des plasmaätzendpunktes unter verwendung der hauptkomponentenanalyse von optischen spektren

Country Status (5)

Country Link
US (1) US6582618B1 (enExample)
EP (1) EP1210724B1 (enExample)
JP (1) JP2003509839A (enExample)
DE (1) DE60041408D1 (enExample)
WO (1) WO2001018845A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1197130C (zh) * 2000-07-04 2005-04-13 东京毅力科创株式会社 处理装置运转监视方法,评价方法及异常检测方法
JP3708031B2 (ja) 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
US7505879B2 (en) 2002-06-05 2009-03-17 Tokyo Electron Limited Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
WO2003105210A1 (ja) * 2002-06-05 2003-12-18 東京エレクトロン株式会社 処理装置の多変量解析モデル式作成方法、処理装置用の多変量解析方法、処理装置の制御装置、処理装置の制御システム
TWI240325B (en) * 2002-06-12 2005-09-21 Semi Sysco Co Ltd Method for detecting an end point in a dry etching process
TWI259546B (en) 2002-06-28 2006-08-01 Tokyo Electron Ltd Method and system for predicting process performance using material processing tool and sensor data
US6723574B1 (en) * 2002-09-26 2004-04-20 Lam Research Corporation Method for quantifying uniformity patterns and including expert knowledge for tool development and control
US6915177B2 (en) * 2002-09-30 2005-07-05 Advanced Micro Devices, Inc. Comprehensive integrated lithographic process control system based on product design and yield feedback system
US6927076B2 (en) * 2002-10-05 2005-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Method for recovering a plasma process
TWI240326B (en) * 2002-10-31 2005-09-21 Tokyo Electron Ltd Method and apparatus for determining an etch property using an endpoint signal
ATE415702T1 (de) * 2003-05-09 2008-12-15 Unaxis Usa Inc Endpunkt-erkennung in einem zeitlich gemultiplexten verfahren unter verwendung eines hüllkurvenalgorithmus
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
US6952657B2 (en) * 2003-09-10 2005-10-04 Peak Sensor Systems Llc Industrial process fault detection using principal component analysis
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) * 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US20060000799A1 (en) * 2004-06-30 2006-01-05 Hyun-Ho Doh Methods and apparatus for determining endpoint in a plasma processing system
US8676538B2 (en) * 2004-11-02 2014-03-18 Advanced Micro Devices, Inc. Adjusting weighting of a parameter relating to fault detection based on a detected fault
US7695984B1 (en) 2005-04-20 2010-04-13 Pivotal Systems Corporation Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes
JP4643392B2 (ja) * 2005-08-24 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置の運転状態判定方法、運転状態判定装置、プログラム及び記憶媒体
US7879732B2 (en) * 2007-12-18 2011-02-01 Chartered Semiconductor Manufacturing Ltd. Thin film etching method and semiconductor device fabrication using same
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
US20110168671A1 (en) * 2010-01-08 2011-07-14 International Business Machines Corporation Process control using signal representative of a throttle valve position
DE102010028461B4 (de) * 2010-04-30 2014-07-10 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels
TWI447828B (zh) * 2011-06-22 2014-08-01 Inotera Memories Inc 製程原始資料的壓縮方法及壓縮系統
CN104736744B (zh) * 2012-10-17 2017-06-06 东京毅力科创株式会社 使用多变量分析的等离子体蚀刻终点检测
US10692705B2 (en) 2015-11-16 2020-06-23 Tokyo Electron Limited Advanced optical sensor and method for detecting an optical event in a light emission signal in a plasma chamber
US10522429B2 (en) 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
SG11201808603VA (en) 2016-03-31 2018-10-30 Tokyo Electron Ltd Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
JP7112620B2 (ja) 2016-11-18 2022-08-04 東京エレクトロン株式会社 製造プロセスにおける粒子によって誘発されるアークの検出のための方法および装置
US10262910B2 (en) * 2016-12-23 2019-04-16 Lam Research Corporation Method of feature exaction from time-series of spectra to control endpoint of process
CN110431655A (zh) 2017-03-17 2019-11-08 东京毅力科创株式会社 用于蚀刻度量改进的表面改性控制
US11328964B2 (en) 2018-12-13 2022-05-10 Applied Materials, Inc. Prescriptive analytics in highly collinear response space
JP2020181959A (ja) * 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
SG11202111021UA (en) 2019-05-23 2021-11-29 Tokyo Electron Ltd Optical diagnostics of semiconductor process using hyperspectral imaging
US10910201B1 (en) * 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
TW202204876A (zh) * 2020-07-16 2022-02-01 日商東京威力科創股份有限公司 資料處理裝置、資料處理系統、資料處理方法及資料處理程式
US12489022B2 (en) 2020-08-12 2025-12-02 Applied Materials, Inc. In-situ etch rate and etch rate uniformity detection system
US11830779B2 (en) 2020-08-12 2023-11-28 Applied Materials, Inc. In-situ etch material selectivity detection system
US12072267B2 (en) * 2020-08-31 2024-08-27 Applied Materials, Inc. Method and hardware for post maintenance vacuum recovery system
US12306044B2 (en) 2022-09-20 2025-05-20 Tokyo Electron Limited Optical emission spectroscopy for advanced process characterization
US12362158B2 (en) 2022-10-25 2025-07-15 Tokyo Electron Limited Method for OES data collection and endpoint detection
US12158374B2 (en) 2022-10-25 2024-12-03 Tokyo Electron Limited Time-resolved OES data collection

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121337A (en) 1990-10-15 1992-06-09 Exxon Research And Engineering Company Method for correcting spectral data for data due to the spectral measurement process itself and estimating unknown property and/or composition data of a sample using such method
US5288367A (en) 1993-02-01 1994-02-22 International Business Machines Corporation End-point detection
US5479340A (en) 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
US5658423A (en) 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
US5862060A (en) 1996-11-22 1999-01-19 Uop Llc Maintenance of process control by statistical analysis of product optical spectrum
US6153115A (en) 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
JP4051470B2 (ja) * 1999-05-18 2008-02-27 東京エレクトロン株式会社 終点検出方法
US6564114B1 (en) * 1999-09-08 2003-05-13 Advanced Micro Devices, Inc. Determining endpoint in etching processes using real-time principal components analysis of optical emission spectra
US6368879B1 (en) * 1999-09-22 2002-04-09 Advanced Micro Devices, Inc. Process control with control signal derived from metrology of a repetitive critical dimension feature of a test structure on the work piece

Also Published As

Publication number Publication date
EP1210724A1 (en) 2002-06-05
WO2001018845A1 (en) 2001-03-15
EP1210724B1 (en) 2009-01-14
JP2003509839A (ja) 2003-03-11
US6582618B1 (en) 2003-06-24

Similar Documents

Publication Publication Date Title
DE60041408D1 (de) Verfahren zur bestimmung des plasmaätzendpunktes unter verwendung der hauptkomponentenanalyse von optischen spektren
DE60115653D1 (de) Verfahren zur Detektion von Emotionen, unter Verwendung von Untergruppenspezialisten
DE60027603D1 (de) Verfahren zur abschätzung von petrophysikalischen gesteinsparametern unter verwendung von temperaturmodifizierten nmr-daten
DE69933896D1 (de) Verfahren zur Aufrechterhaltung der Gleichförmigkeit von Farbmessgeräten
DE69732905D1 (de) Verfahren zur verbesserung der genauigkeit von maschinen
DE69511229D1 (de) Verfahren zur Analyse von gleichmässig erregten mechanischen Schwingungen
DE69841513D1 (de) Verfahren zur NMR-Bohrlochmessung
DE60126002D1 (de) Verfahren und Vorrichtung zur Bildung von sichtbaren Ergebnissen unter Verwendung von kolorimetrischen Streifen
DE69838434D1 (de) Luziferase und verfahren zur bestimmung von intrazellulärem atp unter verwendung derselben
DE69833835D1 (de) Verfahren zur Bestimmung der Dicke eines optischen Prüfkörpers
DE69717413D1 (de) Verfahren zur Gewichtsbestimmung von bogenförmigen Trägern
DE69936553D1 (de) Verfahren zur Konzentrationsmessung von NOx
DE60232117D1 (de) Verfahren zur Dickenmessung
DE10196666T1 (de) Verfahren zur Messung mittels Wobbelfrequenzumsetzung
DE69920967D1 (de) Verfahren zur cvd unter verwendung von bi-alkoxiden
DE69819857D1 (de) Verfahren zur herstellung eines optischen leiters
DE59914773D1 (de) VERFAHREN ZUR BESTIMMUNG DER NOx-KONZENTRATION
DE59806044D1 (de) Verfahren zur ermittlung von segmentzeiten
DE50111035D1 (de) Verfahren zur detektion des von einer probe kommenden lichtes
DE50204097D1 (de) Verfahren zur ermittlung von auswirkungen von konstruktionsentscheidungen
DE69934789D1 (de) Verfahren zur bestimmung der antibiotikasensitivität von bakterien
DE69922499D1 (de) Verfahren zur Erkennung von Kunststoffmaterialien mittels optischer Messungen
DE59901571D1 (de) Verfahren zur kompensation von temperaturbedingten massabweichungen in der maschinengeometrie
DE60203543D1 (de) Verfahren zum Erkennen der Quantisierung von Spektren
DE50012927D1 (de) Verfahren zur kontinuierlichen Bestimmung der optischen Schichtdicke von Beschichtungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES, INC., GRAND CAYMANN, KY

8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,