JP2003315974A5 - - Google Patents

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Publication number
JP2003315974A5
JP2003315974A5 JP2002117102A JP2002117102A JP2003315974A5 JP 2003315974 A5 JP2003315974 A5 JP 2003315974A5 JP 2002117102 A JP2002117102 A JP 2002117102A JP 2002117102 A JP2002117102 A JP 2002117102A JP 2003315974 A5 JP2003315974 A5 JP 2003315974A5
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JP
Japan
Prior art keywords
exposure
pattern
mask
phase shifter
line width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002117102A
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English (en)
Japanese (ja)
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JP2003315974A (ja
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Publication date
Application filed filed Critical
Priority to JP2002117102A priority Critical patent/JP2003315974A/ja
Priority claimed from JP2002117102A external-priority patent/JP2003315974A/ja
Publication of JP2003315974A publication Critical patent/JP2003315974A/ja
Publication of JP2003315974A5 publication Critical patent/JP2003315974A5/ja
Pending legal-status Critical Current

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JP2002117102A 2002-04-19 2002-04-19 露光マスクの作製方法および露光方法 Pending JP2003315974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002117102A JP2003315974A (ja) 2002-04-19 2002-04-19 露光マスクの作製方法および露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002117102A JP2003315974A (ja) 2002-04-19 2002-04-19 露光マスクの作製方法および露光方法

Publications (2)

Publication Number Publication Date
JP2003315974A JP2003315974A (ja) 2003-11-06
JP2003315974A5 true JP2003315974A5 (enExample) 2005-09-08

Family

ID=29534408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002117102A Pending JP2003315974A (ja) 2002-04-19 2002-04-19 露光マスクの作製方法および露光方法

Country Status (1)

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JP (1) JP2003315974A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7396617B2 (en) 2004-06-14 2008-07-08 Photronics, Inc. Photomask reticle having multiple versions of the same mask pattern with different biases
US7435533B2 (en) 2004-06-14 2008-10-14 Photronics, Inc. Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases
US9005848B2 (en) 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9005849B2 (en) 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same

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