JP2003315974A5 - - Google Patents
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- JP2003315974A5 JP2003315974A5 JP2002117102A JP2002117102A JP2003315974A5 JP 2003315974 A5 JP2003315974 A5 JP 2003315974A5 JP 2002117102 A JP2002117102 A JP 2002117102A JP 2002117102 A JP2002117102 A JP 2002117102A JP 2003315974 A5 JP2003315974 A5 JP 2003315974A5
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- pattern
- mask
- phase shifter
- line width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Claims (8)
設計パターンの中から、線幅精度が要求されるパターンと、高解像度でのパターン露光が要求されるパターンとを抽出する工程と、
前記抽出されたパターンに対応するマスクパターンに対して位相シフタを発生させる工程とを行う
ことを特徴とする露光マスクの作製方法。A method for producing an exposure mask comprising a phase shifter that shifts the phase of light transmitted through both sides of the line width direction of the mask pattern,
Extracting a pattern that requires line width accuracy and a pattern that requires high-resolution pattern exposure from the design pattern; and
And a step of generating a phase shifter for the mask pattern corresponding to the extracted pattern. An exposure mask manufacturing method comprising:
前記線幅精度が要求されるパターンは、ゲート電極パターンである
ことを特徴とする露光マスクの作製方法。In the manufacturing method of the exposure mask of Claim 1,
The pattern requiring the line width accuracy is a gate electrode pattern. An exposure mask manufacturing method, wherein:
前記パターンを抽出した後、
前記抽出されたパターンに対応するマスクパターンに対して位相シフタを発生させると共に、当該位相シフタが位相矛盾なく配置されるまで前記マスクパターンを複数枚の露光マスクに分割する
ことを特徴とする露光マスクの作製方法。In the manufacturing method of the exposure mask of Claim 1,
After extracting the pattern,
An exposure mask characterized by generating a phase shifter for a mask pattern corresponding to the extracted pattern and dividing the mask pattern into a plurality of exposure masks until the phase shifter is arranged without phase contradiction Manufacturing method.
設計パターンの中から線幅精度が要求されるパターンと高解像度でのパターン露光が要求されるパターンとを抽出し、抽出されたパターンに対応するマスクパターンに対して位相シフタを発生させてなる露光マスクを作製し、
前記露光マスクを用いた露光を行う
ことを特徴とする露光方法。An exposure method for performing high-resolution pattern exposure by shifting the phase of light transmitted through both sides of the mask pattern in the line width direction,
An exposure that extracts a pattern that requires line width accuracy and a pattern that requires high-resolution pattern exposure from the design pattern, and generates a phase shifter for the mask pattern corresponding to the extracted pattern. Make a mask,
Exposure using the said exposure mask. The exposure method characterized by the above-mentioned.
前記設計パターンのうち前記抽出後に残されたパターンに対応するマスクパターンが形成された通常の露光マスクを作製し、
前記通常の露光マスクを用いて前記露光に重ね合わせた露光を行う
ことを特徴とする露光方法。The exposure method according to claim 4, wherein
Producing a normal exposure mask in which a mask pattern corresponding to the pattern left after the extraction of the design pattern is formed,
An exposure method characterized by performing exposure superimposed on the exposure using the normal exposure mask.
前記抽出されたパターンに対応するマスクパターンに対して位相シフタを発生させると共に、当該位相シフタが位相矛盾なく配置されるまで前記マスクパターンを複数枚の露光マスクに分割し、
分割された複数のマスクを用いた重ね合わせ露光を行う
ことを特徴とする露光方法。The exposure method according to claim 4, wherein
A phase shifter is generated for the mask pattern corresponding to the extracted pattern, and the mask pattern is divided into a plurality of exposure masks until the phase shifter is arranged without phase contradiction,
An exposure method comprising performing overlay exposure using a plurality of divided masks.
前記設計パターンのうち前記抽出後に残されたパターンに対応するマスクパターンが形成された通常の露光マスクを作製し、
前記通常の露光マスクを用いて前記重ね合わせ露光に対して、さらに重ね合わせた露光を行う
ことを特徴とする露光方法。The exposure method according to claim 6, wherein
Producing a normal exposure mask in which a mask pattern corresponding to the pattern left after the extraction of the design pattern is formed,
An exposure method comprising performing further superimposed exposure on the overlay exposure using the normal exposure mask.
設計パターンの中から線幅精度が要求されるパターンと高解像度でのパターン露光が要求されるパターンとを抽出し、抽出されたパターンに対応するマスクパターンに対して位相シフタを発生させてなる露光マスクを作製し、 An exposure that extracts a pattern that requires line width accuracy and a pattern that requires high-resolution pattern exposure from the design pattern, and generates a phase shifter for the mask pattern corresponding to the extracted pattern. Make a mask,
前記露光マスクを用いた露光を行う Perform exposure using the exposure mask
ことを特徴とする半導体装置の製造方法。 A method for manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002117102A JP2003315974A (en) | 2002-04-19 | 2002-04-19 | Method of manufacturing exposure mask and exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002117102A JP2003315974A (en) | 2002-04-19 | 2002-04-19 | Method of manufacturing exposure mask and exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003315974A JP2003315974A (en) | 2003-11-06 |
| JP2003315974A5 true JP2003315974A5 (en) | 2005-09-08 |
Family
ID=29534408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002117102A Pending JP2003315974A (en) | 2002-04-19 | 2002-04-19 | Method of manufacturing exposure mask and exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003315974A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7435533B2 (en) | 2004-06-14 | 2008-10-14 | Photronics, Inc. | Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases |
| US7396617B2 (en) | 2004-06-14 | 2008-07-08 | Photronics, Inc. | Photomask reticle having multiple versions of the same mask pattern with different biases |
| US9005848B2 (en) | 2008-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
| US9005849B2 (en) | 2009-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
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2002
- 2002-04-19 JP JP2002117102A patent/JP2003315974A/en active Pending
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