JP2003309456A - 薄膜トランジスタ回路およびそれを用いた半導体表示装置 - Google Patents

薄膜トランジスタ回路およびそれを用いた半導体表示装置

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Publication number
JP2003309456A
JP2003309456A JP2003008803A JP2003008803A JP2003309456A JP 2003309456 A JP2003309456 A JP 2003309456A JP 2003008803 A JP2003008803 A JP 2003008803A JP 2003008803 A JP2003008803 A JP 2003008803A JP 2003309456 A JP2003309456 A JP 2003309456A
Authority
JP
Japan
Prior art keywords
circuit
thin film
semiconductor
display device
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003008803A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003309456A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003008803A priority Critical patent/JP2003309456A/ja
Publication of JP2003309456A publication Critical patent/JP2003309456A/ja
Publication of JP2003309456A5 publication Critical patent/JP2003309456A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
JP2003008803A 1998-04-28 2003-01-16 薄膜トランジスタ回路およびそれを用いた半導体表示装置 Withdrawn JP2003309456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003008803A JP2003309456A (ja) 1998-04-28 2003-01-16 薄膜トランジスタ回路およびそれを用いた半導体表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11809298 1998-04-28
JP10-118092 1998-04-28
JP2003008803A JP2003309456A (ja) 1998-04-28 2003-01-16 薄膜トランジスタ回路およびそれを用いた半導体表示装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP04857899A Division JP3844613B2 (ja) 1998-04-28 1999-02-25 薄膜トランジスタ回路およびそれを用いた表示装置

Publications (2)

Publication Number Publication Date
JP2003309456A true JP2003309456A (ja) 2003-10-31
JP2003309456A5 JP2003309456A5 (enExample) 2006-04-06

Family

ID=29404543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003008803A Withdrawn JP2003309456A (ja) 1998-04-28 2003-01-16 薄膜トランジスタ回路およびそれを用いた半導体表示装置

Country Status (1)

Country Link
JP (1) JP2003309456A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073953A (ja) * 2005-09-06 2007-03-22 Tera Semicon Corp 多結晶シリコン薄膜製造方法及びその製造装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07191303A (ja) * 1993-12-25 1995-07-28 Semiconductor Energy Lab Co Ltd 液晶表示装置の駆動回路
JPH07294961A (ja) * 1994-04-22 1995-11-10 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置の駆動回路および設計方法
JPH0823105A (ja) * 1994-05-02 1996-01-23 Sony Corp 表示用半導体チップの製造方法
JPH0862637A (ja) * 1994-04-22 1996-03-08 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置の駆動回路及びその製造方法
JPH0878329A (ja) * 1994-09-05 1996-03-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0961843A (ja) * 1995-08-21 1997-03-07 Matsushita Electric Ind Co Ltd レーザアニール方法および液晶表示装置の製造方法
JPH1012891A (ja) * 1996-06-20 1998-01-16 Sony Corp 薄膜半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07191303A (ja) * 1993-12-25 1995-07-28 Semiconductor Energy Lab Co Ltd 液晶表示装置の駆動回路
JPH07294961A (ja) * 1994-04-22 1995-11-10 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置の駆動回路および設計方法
JPH0862637A (ja) * 1994-04-22 1996-03-08 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置の駆動回路及びその製造方法
JPH0823105A (ja) * 1994-05-02 1996-01-23 Sony Corp 表示用半導体チップの製造方法
JPH0878329A (ja) * 1994-09-05 1996-03-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0961843A (ja) * 1995-08-21 1997-03-07 Matsushita Electric Ind Co Ltd レーザアニール方法および液晶表示装置の製造方法
JPH1012891A (ja) * 1996-06-20 1998-01-16 Sony Corp 薄膜半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073953A (ja) * 2005-09-06 2007-03-22 Tera Semicon Corp 多結晶シリコン薄膜製造方法及びその製造装置

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