KR100406760B1
(ko)
*
|
2001-11-16 |
2003-11-21 |
신코엠 주식회사 |
반도체 메모리 장치
|
DE10214159B4
(de)
*
|
2002-03-28 |
2008-03-20 |
Qimonda Ag |
Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen
|
US6818549B2
(en)
*
|
2003-03-05 |
2004-11-16 |
Hewlett-Packard Development Company, L.P. |
Buried magnetic tunnel-junction memory cell and methods
|
US7050319B2
(en)
*
|
2003-12-03 |
2006-05-23 |
Micron Technology, Inc. |
Memory architecture and method of manufacture and operation thereof
|
FR2867300B1
(fr)
*
|
2004-03-05 |
2006-04-28 |
Commissariat Energie Atomique |
Memoire vive magnetoresistive a haute densite de courant
|
JP2005317739A
(ja)
*
|
2004-04-28 |
2005-11-10 |
Toshiba Corp |
磁気記憶装置およびその製造方法
|
JP5007120B2
(ja)
*
|
2004-05-25 |
2012-08-22 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
KR100707170B1
(ko)
*
|
2004-08-23 |
2007-04-13 |
삼성전자주식회사 |
균일한 스위칭 특성을 가지며 저 전류 스위칭이 가능한자기 메모리 소자 및 그 동작방법
|
JP2006080387A
(ja)
*
|
2004-09-10 |
2006-03-23 |
Tdk Corp |
磁気メモリ
|
US7339813B2
(en)
*
|
2004-09-30 |
2008-03-04 |
Sharp Laboratories Of America, Inc. |
Complementary output resistive memory cell
|
DE102004047638B4
(de)
*
|
2004-09-30 |
2011-12-01 |
Qimonda Ag |
Nichtflüchtige Speicherzelle
|
DE112005003425T5
(de)
*
|
2005-01-25 |
2008-01-03 |
Chan, Chien-Chiang, Chung-ho |
Einzelchip mit magnetoresistivem Speicher
|
US7272035B1
(en)
*
|
2005-08-31 |
2007-09-18 |
Grandis, Inc. |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
|
US7272034B1
(en)
*
|
2005-08-31 |
2007-09-18 |
Grandis, Inc. |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
|
US7203089B1
(en)
*
|
2005-11-17 |
2007-04-10 |
Macronix International Co., Ltd. |
Systems and methods for a magnetic memory device that includes two word line transistors
|
JP2007164938A
(ja)
*
|
2005-12-16 |
2007-06-28 |
Matsushita Electric Ind Co Ltd |
半導体記憶装置
|
US8013711B2
(en)
*
|
2006-03-09 |
2011-09-06 |
Panasonic Corporation |
Variable resistance element, semiconductor device, and method for manufacturing variable resistance element
|
US7606055B2
(en)
*
|
2006-05-18 |
2009-10-20 |
Micron Technology, Inc. |
Memory architecture and cell design employing two access transistors
|
US7403413B2
(en)
*
|
2006-06-28 |
2008-07-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Multiple port resistive memory cell
|
US20080094874A1
(en)
*
|
2006-10-23 |
2008-04-24 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Multiple-read resistance-variable memory cell structure and method of sensing a resistance thereof
|
KR100833426B1
(ko)
*
|
2006-12-04 |
2008-05-29 |
주식회사 하이닉스반도체 |
비휘발성 판독 전용 메모리 및 이의 형성 방법
|
JP5137390B2
(ja)
*
|
2006-12-12 |
2013-02-06 |
ルネサスエレクトロニクス株式会社 |
不揮発性記憶装置
|
US7608538B2
(en)
*
|
2007-01-05 |
2009-10-27 |
International Business Machines Corporation |
Formation of vertical devices by electroplating
|
US7508700B2
(en)
*
|
2007-03-15 |
2009-03-24 |
Magic Technologies, Inc. |
Method of magnetic tunneling junction pattern layout for magnetic random access memory
|
JP5151370B2
(ja)
*
|
2007-09-28 |
2013-02-27 |
ソニー株式会社 |
半導体装置
|
US7768812B2
(en)
|
2008-01-15 |
2010-08-03 |
Micron Technology, Inc. |
Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
|
US8194433B2
(en)
*
|
2008-02-20 |
2012-06-05 |
Ovonyx, Inc. |
Method and apparatus for accessing a bidirectional memory
|
JP2009199695A
(ja)
*
|
2008-02-25 |
2009-09-03 |
Toshiba Corp |
抵抗変化メモリ装置
|
US8034655B2
(en)
|
2008-04-08 |
2011-10-11 |
Micron Technology, Inc. |
Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays
|
US8211743B2
(en)
|
2008-05-02 |
2012-07-03 |
Micron Technology, Inc. |
Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes
|
US8134137B2
(en)
|
2008-06-18 |
2012-03-13 |
Micron Technology, Inc. |
Memory device constructions, memory cell forming methods, and semiconductor construction forming methods
|
US9343665B2
(en)
|
2008-07-02 |
2016-05-17 |
Micron Technology, Inc. |
Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
|
US9929211B2
(en)
|
2008-09-24 |
2018-03-27 |
Qualcomm Incorporated |
Reducing spin pumping induced damping of a free layer of a memory device
|
US8315081B2
(en)
|
2010-03-22 |
2012-11-20 |
Qualcomm Incorporated |
Memory cell that includes multiple non-volatile memories
|
US8400822B2
(en)
*
|
2010-03-22 |
2013-03-19 |
Qualcomm Incorporated |
Multi-port non-volatile memory that includes a resistive memory element
|
US8427859B2
(en)
|
2010-04-22 |
2013-04-23 |
Micron Technology, Inc. |
Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
|
US8411477B2
(en)
|
2010-04-22 |
2013-04-02 |
Micron Technology, Inc. |
Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
|
US8289763B2
(en)
|
2010-06-07 |
2012-10-16 |
Micron Technology, Inc. |
Memory arrays
|
US8956341B2
(en)
|
2010-06-10 |
2015-02-17 |
Carefusion 2200, Inc. |
Surgical device with reusable handle
|
US8351242B2
(en)
|
2010-09-29 |
2013-01-08 |
Micron Technology, Inc. |
Electronic devices, memory devices and memory arrays
|
US8441850B2
(en)
*
|
2010-10-08 |
2013-05-14 |
Qualcomm Incorporated |
Magnetic random access memory (MRAM) layout with uniform pattern
|
US8759809B2
(en)
|
2010-10-21 |
2014-06-24 |
Micron Technology, Inc. |
Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
|
US8796661B2
(en)
|
2010-11-01 |
2014-08-05 |
Micron Technology, Inc. |
Nonvolatile memory cells and methods of forming nonvolatile memory cell
|
US8526213B2
(en)
|
2010-11-01 |
2013-09-03 |
Micron Technology, Inc. |
Memory cells, methods of programming memory cells, and methods of forming memory cells
|
US9454997B2
(en)
|
2010-12-02 |
2016-09-27 |
Micron Technology, Inc. |
Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
|
US8902644B2
(en)
|
2010-12-14 |
2014-12-02 |
Nec Corporation |
Semiconductor storage device and its manufacturing method
|
US8431458B2
(en)
|
2010-12-27 |
2013-04-30 |
Micron Technology, Inc. |
Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells
|
US8791447B2
(en)
|
2011-01-20 |
2014-07-29 |
Micron Technology, Inc. |
Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
|
US8488365B2
(en)
|
2011-02-24 |
2013-07-16 |
Micron Technology, Inc. |
Memory cells
|
US8537592B2
(en)
|
2011-04-15 |
2013-09-17 |
Micron Technology, Inc. |
Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
|
JP5677186B2
(ja)
*
|
2011-05-06 |
2015-02-25 |
株式会社東芝 |
半導体記憶装置
|
JP2013064678A
(ja)
*
|
2011-09-20 |
2013-04-11 |
Renesas Electronics Corp |
半導体集積回路装置の製造方法
|
US8670264B1
(en)
*
|
2012-08-14 |
2014-03-11 |
Avalanche Technology, Inc. |
Multi-port magnetic random access memory (MRAM)
|
US9208870B2
(en)
*
|
2012-09-13 |
2015-12-08 |
Adesto Technologies Corporation |
Multi-port memory devices and methods having programmable impedance elements
|
US8901687B2
(en)
|
2012-11-27 |
2014-12-02 |
Industrial Technology Research Institute |
Magnetic device with a substrate, a sensing block and a repair layer
|
US9224447B2
(en)
*
|
2013-04-24 |
2015-12-29 |
Regents Of The University Of Minnesota |
General structure for computational random access memory (CRAM)
|
US20150263068A1
(en)
*
|
2014-03-13 |
2015-09-17 |
Kabushiki Kaisha Toshiba |
Variable resistance memory and the method of controlling the same
|
KR102171264B1
(ko)
*
|
2014-06-18 |
2020-10-28 |
삼성전자 주식회사 |
저 유전율 층을 가지는 메모리 소자 및 그 제조방법
|
US20170117027A1
(en)
*
|
2015-10-21 |
2017-04-27 |
HGST Netherlands B.V. |
Top pinned sot-mram architecture with in-stack selector
|
JP6178451B1
(ja)
*
|
2016-03-16 |
2017-08-09 |
株式会社東芝 |
メモリセルおよび磁気メモリ
|
KR20190084038A
(ko)
*
|
2016-11-14 |
2019-07-15 |
소니 세미컨덕터 솔루션즈 가부시키가이샤 |
반도체 회로 및 반도체 회로 시스템
|
JP2018156697A
(ja)
*
|
2017-03-15 |
2018-10-04 |
東芝メモリ株式会社 |
半導体記憶装置
|
US10468293B2
(en)
*
|
2017-12-28 |
2019-11-05 |
Spin Memory, Inc. |
Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels
|
US11222970B2
(en)
|
2017-12-28 |
2022-01-11 |
Integrated Silicon Solution, (Cayman) Inc. |
Perpendicular magnetic tunnel junction memory cells having vertical channels
|
US10658425B2
(en)
|
2017-12-28 |
2020-05-19 |
Spin Memory, Inc. |
Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels
|
US10460778B2
(en)
|
2017-12-29 |
2019-10-29 |
Spin Memory, Inc. |
Perpendicular magnetic tunnel junction memory cells having shared source contacts
|
CN115132776A
(zh)
*
|
2018-09-07 |
2022-09-30 |
联华电子股份有限公司 |
磁阻式随机存取存储器
|
EP3910634A4
(en)
*
|
2019-01-30 |
2022-01-05 |
Huawei Technologies Co., Ltd. |
MEMORY AND ELECTRONIC DEVICE
|
JP2020136396A
(ja)
*
|
2019-02-15 |
2020-08-31 |
キオクシア株式会社 |
半導体記憶装置
|
US11176979B2
(en)
|
2019-02-28 |
2021-11-16 |
Regents Of The University Of Minnesota |
Computational random access memory (CRAM) based on spin-orbit torque devices
|
JP2020149736A
(ja)
*
|
2019-03-11 |
2020-09-17 |
キオクシア株式会社 |
半導体記憶装置
|
JP2021039808A
(ja)
*
|
2019-09-03 |
2021-03-11 |
ソニーセミコンダクタソリューションズ株式会社 |
半導体回路および半導体回路システム
|
TW202127438A
(zh)
*
|
2020-01-07 |
2021-07-16 |
聯華電子股份有限公司 |
記憶體
|
WO2021253716A1
(zh)
*
|
2020-06-19 |
2021-12-23 |
长鑫存储技术有限公司 |
存储单元及其数据读写方法、存储阵列
|
US11145349B1
(en)
*
|
2020-09-28 |
2021-10-12 |
Globalfoundries U.S. Inc. |
Physically unclonable function architecture including memory cells with parallel-connected access transistors and common write wordlines
|
US20220108158A1
(en)
*
|
2020-10-02 |
2022-04-07 |
Sandisk Technologies Llc |
Ultralow power inference engine with external magnetic field programming assistance
|
CN113658627B
(zh)
*
|
2021-07-26 |
2024-03-29 |
安徽大学 |
一种能区分阻态交叉的10t4r单元电路
|