JP2003297069A5 - - Google Patents

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Publication number
JP2003297069A5
JP2003297069A5 JP2002100806A JP2002100806A JP2003297069A5 JP 2003297069 A5 JP2003297069 A5 JP 2003297069A5 JP 2002100806 A JP2002100806 A JP 2002100806A JP 2002100806 A JP2002100806 A JP 2002100806A JP 2003297069 A5 JP2003297069 A5 JP 2003297069A5
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JP
Japan
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JP2002100806A
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JP2003297069A (ja
JP4047615B2 (ja
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Priority claimed from JP2002100806A external-priority patent/JP4047615B2/ja
Priority to JP2002100806A priority Critical patent/JP4047615B2/ja
Priority to TW091121114A priority patent/TW594728B/zh
Priority to US10/262,941 priority patent/US6914806B2/en
Priority to DE10256977A priority patent/DE10256977A1/de
Priority to KR10-2002-0076849A priority patent/KR100511017B1/ko
Priority to CNB021540497A priority patent/CN1329917C/zh
Publication of JP2003297069A publication Critical patent/JP2003297069A/ja
Publication of JP2003297069A5 publication Critical patent/JP2003297069A5/ja
Publication of JP4047615B2 publication Critical patent/JP4047615B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002100806A 2002-04-03 2002-04-03 磁気記憶装置 Expired - Fee Related JP4047615B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002100806A JP4047615B2 (ja) 2002-04-03 2002-04-03 磁気記憶装置
TW091121114A TW594728B (en) 2002-04-03 2002-09-16 Magnetic memory device
US10/262,941 US6914806B2 (en) 2002-04-03 2002-10-03 Magnetic memory device
KR10-2002-0076849A KR100511017B1 (ko) 2002-04-03 2002-12-05 자기기억장치
DE10256977A DE10256977A1 (de) 2002-04-03 2002-12-05 Magnetische Speichervorrichtung
CNB021540497A CN1329917C (zh) 2002-04-03 2002-12-06 磁存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002100806A JP4047615B2 (ja) 2002-04-03 2002-04-03 磁気記憶装置

Publications (3)

Publication Number Publication Date
JP2003297069A JP2003297069A (ja) 2003-10-17
JP2003297069A5 true JP2003297069A5 (ja) 2005-09-08
JP4047615B2 JP4047615B2 (ja) 2008-02-13

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ID=28786236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002100806A Expired - Fee Related JP4047615B2 (ja) 2002-04-03 2002-04-03 磁気記憶装置

Country Status (6)

Country Link
US (1) US6914806B2 (ja)
JP (1) JP4047615B2 (ja)
KR (1) KR100511017B1 (ja)
CN (1) CN1329917C (ja)
DE (1) DE10256977A1 (ja)
TW (1) TW594728B (ja)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100406760B1 (ko) * 2001-11-16 2003-11-21 신코엠 주식회사 반도체 메모리 장치
DE10214159B4 (de) * 2002-03-28 2008-03-20 Qimonda Ag Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen
US6818549B2 (en) * 2003-03-05 2004-11-16 Hewlett-Packard Development Company, L.P. Buried magnetic tunnel-junction memory cell and methods
US7050319B2 (en) * 2003-12-03 2006-05-23 Micron Technology, Inc. Memory architecture and method of manufacture and operation thereof
FR2867300B1 (fr) * 2004-03-05 2006-04-28 Commissariat Energie Atomique Memoire vive magnetoresistive a haute densite de courant
JP2005317739A (ja) * 2004-04-28 2005-11-10 Toshiba Corp 磁気記憶装置およびその製造方法
JP5007120B2 (ja) * 2004-05-25 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置
KR100707170B1 (ko) * 2004-08-23 2007-04-13 삼성전자주식회사 균일한 스위칭 특성을 가지며 저 전류 스위칭이 가능한자기 메모리 소자 및 그 동작방법
JP2006080387A (ja) * 2004-09-10 2006-03-23 Tdk Corp 磁気メモリ
US7339813B2 (en) * 2004-09-30 2008-03-04 Sharp Laboratories Of America, Inc. Complementary output resistive memory cell
DE102004047638B4 (de) * 2004-09-30 2011-12-01 Qimonda Ag Nichtflüchtige Speicherzelle
DE112005003425T5 (de) * 2005-01-25 2008-01-03 Chan, Chien-Chiang, Chung-ho Einzelchip mit magnetoresistivem Speicher
US7272035B1 (en) * 2005-08-31 2007-09-18 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
US7272034B1 (en) * 2005-08-31 2007-09-18 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
US7203089B1 (en) * 2005-11-17 2007-04-10 Macronix International Co., Ltd. Systems and methods for a magnetic memory device that includes two word line transistors
JP2007164938A (ja) * 2005-12-16 2007-06-28 Matsushita Electric Ind Co Ltd 半導体記憶装置
US8013711B2 (en) * 2006-03-09 2011-09-06 Panasonic Corporation Variable resistance element, semiconductor device, and method for manufacturing variable resistance element
US7606055B2 (en) * 2006-05-18 2009-10-20 Micron Technology, Inc. Memory architecture and cell design employing two access transistors
US7403413B2 (en) * 2006-06-28 2008-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple port resistive memory cell
US20080094874A1 (en) * 2006-10-23 2008-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-read resistance-variable memory cell structure and method of sensing a resistance thereof
KR100833426B1 (ko) * 2006-12-04 2008-05-29 주식회사 하이닉스반도체 비휘발성 판독 전용 메모리 및 이의 형성 방법
JP5137390B2 (ja) * 2006-12-12 2013-02-06 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
US7508700B2 (en) * 2007-03-15 2009-03-24 Magic Technologies, Inc. Method of magnetic tunneling junction pattern layout for magnetic random access memory
JP5151370B2 (ja) * 2007-09-28 2013-02-27 ソニー株式会社 半導体装置
US7768812B2 (en) 2008-01-15 2010-08-03 Micron Technology, Inc. Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
US8194433B2 (en) * 2008-02-20 2012-06-05 Ovonyx, Inc. Method and apparatus for accessing a bidirectional memory
JP2009199695A (ja) * 2008-02-25 2009-09-03 Toshiba Corp 抵抗変化メモリ装置
US8034655B2 (en) 2008-04-08 2011-10-11 Micron Technology, Inc. Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays
US8211743B2 (en) 2008-05-02 2012-07-03 Micron Technology, Inc. Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes
US8134137B2 (en) 2008-06-18 2012-03-13 Micron Technology, Inc. Memory device constructions, memory cell forming methods, and semiconductor construction forming methods
US9343665B2 (en) 2008-07-02 2016-05-17 Micron Technology, Inc. Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
US9929211B2 (en) 2008-09-24 2018-03-27 Qualcomm Incorporated Reducing spin pumping induced damping of a free layer of a memory device
US8315081B2 (en) 2010-03-22 2012-11-20 Qualcomm Incorporated Memory cell that includes multiple non-volatile memories
US8400822B2 (en) * 2010-03-22 2013-03-19 Qualcomm Incorporated Multi-port non-volatile memory that includes a resistive memory element
US8427859B2 (en) 2010-04-22 2013-04-23 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8411477B2 (en) 2010-04-22 2013-04-02 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8289763B2 (en) 2010-06-07 2012-10-16 Micron Technology, Inc. Memory arrays
US8956341B2 (en) 2010-06-10 2015-02-17 Carefusion 2200, Inc. Surgical device with reusable handle
US8351242B2 (en) 2010-09-29 2013-01-08 Micron Technology, Inc. Electronic devices, memory devices and memory arrays
US8441850B2 (en) * 2010-10-08 2013-05-14 Qualcomm Incorporated Magnetic random access memory (MRAM) layout with uniform pattern
US8759809B2 (en) 2010-10-21 2014-06-24 Micron Technology, Inc. Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
US8796661B2 (en) 2010-11-01 2014-08-05 Micron Technology, Inc. Nonvolatile memory cells and methods of forming nonvolatile memory cell
US8526213B2 (en) 2010-11-01 2013-09-03 Micron Technology, Inc. Memory cells, methods of programming memory cells, and methods of forming memory cells
US9454997B2 (en) 2010-12-02 2016-09-27 Micron Technology, Inc. Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
US8902644B2 (en) 2010-12-14 2014-12-02 Nec Corporation Semiconductor storage device and its manufacturing method
US8431458B2 (en) 2010-12-27 2013-04-30 Micron Technology, Inc. Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells
US8791447B2 (en) 2011-01-20 2014-07-29 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
US8488365B2 (en) 2011-02-24 2013-07-16 Micron Technology, Inc. Memory cells
US8537592B2 (en) 2011-04-15 2013-09-17 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
JP5677186B2 (ja) * 2011-05-06 2015-02-25 株式会社東芝 半導体記憶装置
JP2013064678A (ja) * 2011-09-20 2013-04-11 Renesas Electronics Corp 半導体集積回路装置の製造方法
US8670264B1 (en) * 2012-08-14 2014-03-11 Avalanche Technology, Inc. Multi-port magnetic random access memory (MRAM)
US9208870B2 (en) * 2012-09-13 2015-12-08 Adesto Technologies Corporation Multi-port memory devices and methods having programmable impedance elements
US8901687B2 (en) 2012-11-27 2014-12-02 Industrial Technology Research Institute Magnetic device with a substrate, a sensing block and a repair layer
US9224447B2 (en) * 2013-04-24 2015-12-29 Regents Of The University Of Minnesota General structure for computational random access memory (CRAM)
US20150263068A1 (en) * 2014-03-13 2015-09-17 Kabushiki Kaisha Toshiba Variable resistance memory and the method of controlling the same
KR102171264B1 (ko) * 2014-06-18 2020-10-28 삼성전자 주식회사 저 유전율 층을 가지는 메모리 소자 및 그 제조방법
US20170117027A1 (en) * 2015-10-21 2017-04-27 HGST Netherlands B.V. Top pinned sot-mram architecture with in-stack selector
JP6178451B1 (ja) * 2016-03-16 2017-08-09 株式会社東芝 メモリセルおよび磁気メモリ
KR20190084038A (ko) * 2016-11-14 2019-07-15 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 회로 및 반도체 회로 시스템
JP2018156697A (ja) * 2017-03-15 2018-10-04 東芝メモリ株式会社 半導体記憶装置
US10468293B2 (en) * 2017-12-28 2019-11-05 Spin Memory, Inc. Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels
US11222970B2 (en) 2017-12-28 2022-01-11 Integrated Silicon Solution, (Cayman) Inc. Perpendicular magnetic tunnel junction memory cells having vertical channels
US10658425B2 (en) 2017-12-28 2020-05-19 Spin Memory, Inc. Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels
US10460778B2 (en) 2017-12-29 2019-10-29 Spin Memory, Inc. Perpendicular magnetic tunnel junction memory cells having shared source contacts
CN115132776A (zh) * 2018-09-07 2022-09-30 联华电子股份有限公司 磁阻式随机存取存储器
EP3910634A4 (en) * 2019-01-30 2022-01-05 Huawei Technologies Co., Ltd. MEMORY AND ELECTRONIC DEVICE
JP2020136396A (ja) * 2019-02-15 2020-08-31 キオクシア株式会社 半導体記憶装置
US11176979B2 (en) 2019-02-28 2021-11-16 Regents Of The University Of Minnesota Computational random access memory (CRAM) based on spin-orbit torque devices
JP2020149736A (ja) * 2019-03-11 2020-09-17 キオクシア株式会社 半導体記憶装置
JP2021039808A (ja) * 2019-09-03 2021-03-11 ソニーセミコンダクタソリューションズ株式会社 半導体回路および半導体回路システム
TW202127438A (zh) * 2020-01-07 2021-07-16 聯華電子股份有限公司 記憶體
WO2021253716A1 (zh) * 2020-06-19 2021-12-23 长鑫存储技术有限公司 存储单元及其数据读写方法、存储阵列
US11145349B1 (en) * 2020-09-28 2021-10-12 Globalfoundries U.S. Inc. Physically unclonable function architecture including memory cells with parallel-connected access transistors and common write wordlines
US20220108158A1 (en) * 2020-10-02 2022-04-07 Sandisk Technologies Llc Ultralow power inference engine with external magnetic field programming assistance
CN113658627B (zh) * 2021-07-26 2024-03-29 安徽大学 一种能区分阻态交叉的10t4r单元电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5732016A (en) 1996-07-02 1998-03-24 Motorola Memory cell structure in a magnetic random access memory and a method for fabricating thereof
US5946227A (en) 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6034887A (en) * 1998-08-05 2000-03-07 International Business Machines Corporation Non-volatile magnetic memory cell and devices
US5940319A (en) 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
KR100366702B1 (ko) 2000-02-03 2003-01-08 삼성전자 주식회사 쓰기 및 읽기 회로를 갖는 자기 터널 접합 소자를 이용한자기 랜덤 액세스 메모리
US6252471B1 (en) 2000-09-29 2001-06-26 Motorola Inc. Programmable oscillator using magnetoresistive memory technology
US6272040B1 (en) 2000-09-29 2001-08-07 Motorola, Inc. System and method for programming a magnetoresistive memory device
TW584976B (en) * 2000-11-09 2004-04-21 Sanyo Electric Co Magnetic memory device
JP3844117B2 (ja) * 2001-06-27 2006-11-08 インターナショナル・ビジネス・マシーンズ・コーポレーション メモリセル、記憶回路ブロック、データの書き込み方法及びデータの読み出し方法
JP2003016777A (ja) * 2001-06-28 2003-01-17 Mitsubishi Electric Corp 薄膜磁性体記憶装置

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