JP2003295413A5 - - Google Patents
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- Publication number
- JP2003295413A5 JP2003295413A5 JP2003124535A JP2003124535A JP2003295413A5 JP 2003295413 A5 JP2003295413 A5 JP 2003295413A5 JP 2003124535 A JP2003124535 A JP 2003124535A JP 2003124535 A JP2003124535 A JP 2003124535A JP 2003295413 A5 JP2003295413 A5 JP 2003295413A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36654502P | 2002-03-25 | 2002-03-25 | |
| US366545 | 2002-03-25 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007212820A Division JP4558770B2 (ja) | 2002-03-25 | 2007-08-17 | マスクパターン形成方法及び装置、並びに、コンピュータ・プログラム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003295413A JP2003295413A (ja) | 2003-10-15 |
| JP2003295413A5 true JP2003295413A5 (enExample) | 2007-10-04 |
| JP4102701B2 JP4102701B2 (ja) | 2008-06-18 |
Family
ID=27805318
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003124535A Expired - Fee Related JP4102701B2 (ja) | 2002-03-25 | 2003-03-25 | クロムレス相リソグラフィのために半導体デバイス・パターンを相領域とクロム領域に分解するための方法および装置 |
| JP2007212820A Expired - Fee Related JP4558770B2 (ja) | 2002-03-25 | 2007-08-17 | マスクパターン形成方法及び装置、並びに、コンピュータ・プログラム |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007212820A Expired - Fee Related JP4558770B2 (ja) | 2002-03-25 | 2007-08-17 | マスクパターン形成方法及び装置、並びに、コンピュータ・プログラム |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6851103B2 (enExample) |
| EP (1) | EP1349002B1 (enExample) |
| JP (2) | JP4102701B2 (enExample) |
| KR (1) | KR100566151B1 (enExample) |
| CN (1) | CN100405221C (enExample) |
| DE (1) | DE60306438T2 (enExample) |
| SG (2) | SG144749A1 (enExample) |
| TW (1) | TWI301229B (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06335801A (ja) * | 1993-05-24 | 1994-12-06 | Okuma Mach Works Ltd | バランス修正機能付数値制御旋盤 |
| JP3025369U (ja) * | 1995-11-30 | 1996-06-11 | 大宮工業株式会社 | 不釣合い修正機能付旋盤 |
| KR100566151B1 (ko) * | 2002-03-25 | 2006-03-31 | 에이에스엠엘 마스크툴즈 비.브이. | 무크롬 상 리소그래피를 이용하여 상 및 크롬영역으로반도체디바이스패턴을 분해하는 방법 및 장치 |
| JP2004133427A (ja) * | 2002-07-26 | 2004-04-30 | Asml Masktools Bv | ダイポール照明技術とともに用いる配向依存遮蔽 |
| SG137657A1 (en) * | 2002-11-12 | 2007-12-28 | Asml Masktools Bv | Method and apparatus for performing model-based layout conversion for use with dipole illumination |
| US7234128B2 (en) * | 2003-10-03 | 2007-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for improving the critical dimension uniformity of patterned features on wafers |
| US6968532B2 (en) * | 2003-10-08 | 2005-11-22 | Intel Corporation | Multiple exposure technique to pattern tight contact geometries |
| US7861207B2 (en) * | 2004-02-25 | 2010-12-28 | Mentor Graphics Corporation | Fragmentation point and simulation site adjustment for resolution enhancement techniques |
| US7234130B2 (en) * | 2004-02-25 | 2007-06-19 | James Word | Long range corrections in integrated circuit layout designs |
| US7493587B2 (en) * | 2005-03-02 | 2009-02-17 | James Word | Chromeless phase shifting mask for integrated circuits using interior region |
| US8037429B2 (en) * | 2005-03-02 | 2011-10-11 | Mentor Graphics Corporation | Model-based SRAF insertion |
| DE102005009805A1 (de) * | 2005-03-03 | 2006-09-14 | Infineon Technologies Ag | Lithographiemaske und Verfahren zum Erzeugen einer Lithographiemaske |
| SG126877A1 (en) * | 2005-04-12 | 2006-11-29 | Asml Masktools Bv | A method, program product and apparatus for performing double exposure lithography |
| WO2006127538A2 (en) * | 2005-05-20 | 2006-11-30 | Cadence Design Systems, Inc. | Manufacturing aware design and design aware manufacturing |
| US7395516B2 (en) | 2005-05-20 | 2008-07-01 | Cadence Design Systems, Inc. | Manufacturing aware design and design aware manufacturing |
| US7732102B2 (en) * | 2005-07-14 | 2010-06-08 | Freescale Semiconductor, Inc. | Cr-capped chromeless phase lithography |
| EP2267530A1 (en) * | 2006-04-06 | 2010-12-29 | ASML MaskTools B.V. | Method and apparatus for performing dark field double dipole lithography |
| JP4922112B2 (ja) * | 2006-09-13 | 2012-04-25 | エーエスエムエル マスクツールズ ビー．ブイ． | パターン分解フィーチャのためのモデルベースｏｐｃを行うための方法および装置 |
| US7934177B2 (en) * | 2007-02-06 | 2011-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for a pattern layout split |
| US7799487B2 (en) * | 2007-02-09 | 2010-09-21 | Ayman Yehia Hamouda | Dual metric OPC |
| US7945869B2 (en) * | 2007-08-20 | 2011-05-17 | Infineon Technologies Ag | Mask and method for patterning a semiconductor wafer |
| US7846643B1 (en) | 2007-11-02 | 2010-12-07 | Western Digital (Fremont), Llc | Method and system for providing a structure in a microelectronic device using a chromeless alternating phase shift mask |
| JP5355112B2 (ja) * | 2009-01-28 | 2013-11-27 | 株式会社東芝 | パターンレイアウト作成方法 |
| JP5407623B2 (ja) * | 2009-07-16 | 2014-02-05 | 富士通セミコンダクター株式会社 | マスクパターン評価方法、マスクパターン補正方法及びマスクパターン発生装置 |
| CN109298592A (zh) * | 2012-02-15 | 2019-02-01 | 大日本印刷株式会社 | 相移掩模及使用该相移掩模的抗蚀图案形成方法 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362591A (en) * | 1989-10-09 | 1994-11-08 | Hitachi Ltd. Et Al. | Mask having a phase shifter and method of manufacturing same |
| US5281500A (en) * | 1991-09-04 | 1994-01-25 | Micron Technology, Inc. | Method of preventing null formation in phase shifted photomasks |
| JPH05341498A (ja) | 1992-04-10 | 1993-12-24 | Toshiba Corp | フォトマスク設計装置および設計方法 |
| US5881125A (en) | 1992-09-25 | 1999-03-09 | Intel Corporation | Attenuated phase-shifted reticle using sub-resolution pattern |
| US5446521A (en) * | 1993-06-30 | 1995-08-29 | Intel Corporation | Phase-shifted opaquing ring |
| JP2661529B2 (ja) | 1993-11-30 | 1997-10-08 | 日本電気株式会社 | 位相シフトマスク |
| JP2917879B2 (ja) | 1995-10-31 | 1999-07-12 | 日本電気株式会社 | フォトマスク及びその製造方法 |
| US6228539B1 (en) * | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| US5923562A (en) * | 1996-10-18 | 1999-07-13 | International Business Machines Corporation | Method for automatically eliminating three way intersection design conflicts in phase edge, phase shift designs |
| JPH10198018A (ja) * | 1997-01-13 | 1998-07-31 | Mitsubishi Electric Corp | 減衰型位相シフトマスクおよびその製造方法 |
| US6114071A (en) | 1997-11-24 | 2000-09-05 | Asml Masktools Netherlands B.V. | Method of fine feature edge tuning with optically-halftoned mask |
| US6106979A (en) * | 1997-12-30 | 2000-08-22 | Micron Technology, Inc. | Use of attenuating phase-shifting mask for improved printability of clear-field patterns |
| US6077630A (en) * | 1998-01-08 | 2000-06-20 | Micron Technology, Inc. | Subresolution grating for attenuated phase shifting mask fabrication |
| KR100585466B1 (ko) | 1998-03-17 | 2006-06-02 | 에이에스엠엘 마스크툴즈 비.브이. | 고 투과성 “감쇠” 위상 시프트 마스크를 갖는서브-0.25λ 라인 피쳐를 패터닝하는 방법 |
| JP3185754B2 (ja) * | 1998-05-29 | 2001-07-11 | 日本電気株式会社 | 露光原版の作製方法 |
| KR100400294B1 (ko) * | 1998-12-30 | 2003-12-24 | 주식회사 하이닉스반도체 | 노광마스크 |
| JP4442962B2 (ja) * | 1999-10-19 | 2010-03-31 | 株式会社ルネサステクノロジ | フォトマスクの製造方法 |
| JP2001183806A (ja) | 1999-12-24 | 2001-07-06 | Nec Corp | 露光方法および位相シフトマスク |
| DE10001119A1 (de) * | 2000-01-13 | 2001-07-26 | Infineon Technologies Ag | Phasenmaske |
| JP2001222097A (ja) * | 2000-02-09 | 2001-08-17 | Fujitsu Ltd | 位相シフトマスク及びその製造方法 |
| JP2001319871A (ja) * | 2000-02-29 | 2001-11-16 | Nikon Corp | 露光方法、濃度フィルタの製造方法、及び露光装置 |
| US6544694B2 (en) * | 2000-03-03 | 2003-04-08 | Koninklijke Philips Electronics N.V. | Method of manufacturing a device by means of a mask phase-shifting mask for use in said method |
| JP2001296646A (ja) * | 2000-04-17 | 2001-10-26 | Fujitsu Ltd | フォトマスク、フォトマスクの製造方法、露光方法及び露光装置 |
| JP3749083B2 (ja) * | 2000-04-25 | 2006-02-22 | 株式会社ルネサステクノロジ | 電子装置の製造方法 |
| US6335130B1 (en) | 2000-05-01 | 2002-01-01 | Asml Masktools Netherlands B.V. | System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features |
| TW512424B (en) * | 2000-05-01 | 2002-12-01 | Asml Masktools Bv | Hybrid phase-shift mask |
| US6338922B1 (en) * | 2000-05-08 | 2002-01-15 | International Business Machines Corporation | Optimized alternating phase shifted mask design |
| US6787271B2 (en) * | 2000-07-05 | 2004-09-07 | Numerical Technologies, Inc. | Design and layout of phase shifting photolithographic masks |
| US6815129B1 (en) * | 2000-09-26 | 2004-11-09 | Euv Llc | Compensation of flare-induced CD changes EUVL |
| US6901575B2 (en) * | 2000-10-25 | 2005-05-31 | Numerical Technologies, Inc. | Resolving phase-shift conflicts in layouts using weighted links between phase shifters |
| US6500587B1 (en) * | 2001-02-02 | 2002-12-31 | Advanced Micro Devices, Inc. | Binary and attenuating phase-shifting masks for multiple wavelengths |
| US6553562B2 (en) | 2001-05-04 | 2003-04-22 | Asml Masktools B.V. | Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques |
| US6571380B2 (en) * | 2001-07-12 | 2003-05-27 | Micron Technology, Inc. | Integrated circuit with layout matched high speed lines |
| US6605396B2 (en) * | 2001-08-06 | 2003-08-12 | Infineon Technologies, Ag | Resolution enhancement for alternating phase shift masks |
| US6548417B2 (en) * | 2001-09-19 | 2003-04-15 | Intel Corporation | In-situ balancing for phase-shifting mask |
| US6757886B2 (en) * | 2001-11-13 | 2004-06-29 | International Business Machines Corporation | Alternating phase shift mask design with optimized phase shapes |
| EP1408373A4 (en) * | 2001-12-26 | 2012-01-25 | Panasonic Corp | PHOTOMASK, METHOD FOR THE PRODUCTION THEREOF AND STRUCTURAL EDUCATION PROCESS WITH THE PHOTOMASK |
| US6625802B2 (en) | 2002-02-01 | 2003-09-23 | Intel Corporation | Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography |
| KR100566151B1 (ko) * | 2002-03-25 | 2006-03-31 | 에이에스엠엘 마스크툴즈 비.브이. | 무크롬 상 리소그래피를 이용하여 상 및 크롬영역으로반도체디바이스패턴을 분해하는 방법 및 장치 |
| US6894864B2 (en) | 2002-07-26 | 2005-05-17 | Wistron Corp. | Portable information storage device |
-
2003
- 2003-03-25 KR KR1020030018563A patent/KR100566151B1/ko not_active Expired - Fee Related
- 2003-03-25 SG SG200608891-8A patent/SG144749A1/en unknown
- 2003-03-25 EP EP03251875A patent/EP1349002B1/en not_active Expired - Lifetime
- 2003-03-25 DE DE60306438T patent/DE60306438T2/de not_active Expired - Fee Related
- 2003-03-25 CN CNB031286399A patent/CN100405221C/zh not_active Expired - Lifetime
- 2003-03-25 SG SG200301491A patent/SG125911A1/en unknown
- 2003-03-25 TW TW092106620A patent/TWI301229B/zh not_active IP Right Cessation
- 2003-03-25 JP JP2003124535A patent/JP4102701B2/ja not_active Expired - Fee Related
- 2003-03-25 US US10/395,903 patent/US6851103B2/en not_active Expired - Lifetime
-
2005
- 2005-01-18 US US11/035,737 patent/US7549140B2/en not_active Expired - Lifetime
-
2007
- 2007-08-17 JP JP2007212820A patent/JP4558770B2/ja not_active Expired - Fee Related