JP2003258381A5 - - Google Patents
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- JP2003258381A5 JP2003258381A5 JP2002059065A JP2002059065A JP2003258381A5 JP 2003258381 A5 JP2003258381 A5 JP 2003258381A5 JP 2002059065 A JP2002059065 A JP 2002059065A JP 2002059065 A JP2002059065 A JP 2002059065A JP 2003258381 A5 JP2003258381 A5 JP 2003258381A5
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- JP
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- Prior art keywords
- nitride semiconductor
- composition ratio
- semiconductor layer
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- depth
- Prior art date
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002059065A JP4251813B2 (ja) | 2002-03-05 | 2002-03-05 | 窒化物半導体発光素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002059065A JP4251813B2 (ja) | 2002-03-05 | 2002-03-05 | 窒化物半導体発光素子の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003258381A JP2003258381A (ja) | 2003-09-12 |
JP2003258381A5 true JP2003258381A5 (ko) | 2005-09-15 |
JP4251813B2 JP4251813B2 (ja) | 2009-04-08 |
Family
ID=28668867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002059065A Expired - Lifetime JP4251813B2 (ja) | 2002-03-05 | 2002-03-05 | 窒化物半導体発光素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4251813B2 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4822674B2 (ja) * | 2004-04-30 | 2011-11-24 | パナソニック株式会社 | 窒化物半導体素子およびその製造方法 |
US8368183B2 (en) | 2004-11-02 | 2013-02-05 | Sharp Kabushiki Kaisha | Nitride semiconductor device |
JP2007201379A (ja) * | 2006-01-30 | 2007-08-09 | Hamamatsu Photonics Kk | 化合物半導体基板、その製造方法及び半導体デバイス |
WO2009139376A1 (ja) * | 2008-05-14 | 2009-11-19 | 昭和電工株式会社 | Iii族窒化物半導体発光素子の製造方法及びiii族窒化物半導体発光素子、並びにランプ |
TWI656660B (zh) * | 2011-10-27 | 2019-04-11 | 晶元光電股份有限公司 | 半導體發光二極體結構 |
-
2002
- 2002-03-05 JP JP2002059065A patent/JP4251813B2/ja not_active Expired - Lifetime
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