JP2003229547A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003229547A5 JP2003229547A5 JP2002153063A JP2002153063A JP2003229547A5 JP 2003229547 A5 JP2003229547 A5 JP 2003229547A5 JP 2002153063 A JP2002153063 A JP 2002153063A JP 2002153063 A JP2002153063 A JP 2002153063A JP 2003229547 A5 JP2003229547 A5 JP 2003229547A5
- Authority
- JP
- Japan
- Prior art keywords
- memory cells
- random access
- magnetic random
- read
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002153063A JP2003229547A (ja) | 2001-11-29 | 2002-05-27 | 磁気ランダムアクセスメモリ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-365236 | 2001-11-29 | ||
| JP2001365236 | 2001-11-29 | ||
| JP2002153063A JP2003229547A (ja) | 2001-11-29 | 2002-05-27 | 磁気ランダムアクセスメモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003229547A JP2003229547A (ja) | 2003-08-15 |
| JP2003229547A5 true JP2003229547A5 (https=) | 2005-08-25 |
Family
ID=27759498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002153063A Pending JP2003229547A (ja) | 2001-11-29 | 2002-05-27 | 磁気ランダムアクセスメモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003229547A (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005310840A (ja) | 2004-04-16 | 2005-11-04 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| JP5065940B2 (ja) * | 2008-02-28 | 2012-11-07 | 株式会社東芝 | 磁気記憶装置 |
| JP2009259316A (ja) | 2008-04-14 | 2009-11-05 | Toshiba Corp | 半導体記憶装置 |
| KR101448365B1 (ko) * | 2010-04-28 | 2014-10-07 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 기억 장치 |
| KR101385637B1 (ko) | 2012-10-31 | 2014-04-24 | 성균관대학교산학협력단 | 반도체 메모리 장치, 프로그램 방법 및 시스템 |
| CN115315748A (zh) * | 2020-03-27 | 2022-11-08 | 华为技术有限公司 | 一种磁性随机存储器及电子设备 |
-
2002
- 2002-05-27 JP JP2002153063A patent/JP2003229547A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI333207B (en) | Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device | |
| US8279662B2 (en) | Multi-bit magnetic memory with independently programmable free layer domains | |
| CN100541650C (zh) | 非易失性存储阵列和地址转换方法 | |
| JP2010534941A (ja) | 多状態の不揮発性メモリ素子 | |
| RU2010129831A (ru) | Устройство с магнитным туннельным переходом с раздельными трактами считывания и записи | |
| JP2004104127A5 (https=) | ||
| JP2002367365A5 (https=) | ||
| CN102882513A (zh) | 全加器电路和芯片 | |
| JP2006140468A (ja) | マグネチックram | |
| CN1347560A (zh) | 对磁电阻存储器中单元电阻估值的装置 | |
| JP2005259334A5 (https=) | ||
| US7149100B2 (en) | Serial transistor-cell array architecture | |
| CN110164902A (zh) | 一种多级单元磁存储结构及其读写方法 | |
| JP2009163860A5 (https=) | ||
| CN102365746A (zh) | 异质结氧化物非易失性存储器装置 | |
| KR101323767B1 (ko) | 플럭스 프로그래밍된 멀티-비트 자기 메모리 | |
| JP2003229547A5 (https=) | ||
| CN102891679B (zh) | 或逻辑电路和芯片 | |
| JP2012027974A (ja) | 半導体記憶装置 | |
| US6836429B2 (en) | MRAM having two write conductors | |
| CN102882514B (zh) | 与逻辑电路和芯片 | |
| WO2002084706A3 (de) | Integrierte magnetoresistive halbleiterspeicheranordnung | |
| JP2004193603A5 (https=) | ||
| US20190051338A1 (en) | Storage device, information processing apparatus, and storage device control method | |
| CN102881333B (zh) | 移位寄存器电路和芯片 |