JP2003229547A - 磁気ランダムアクセスメモリ - Google Patents

磁気ランダムアクセスメモリ

Info

Publication number
JP2003229547A
JP2003229547A JP2002153063A JP2002153063A JP2003229547A JP 2003229547 A JP2003229547 A JP 2003229547A JP 2002153063 A JP2002153063 A JP 2002153063A JP 2002153063 A JP2002153063 A JP 2002153063A JP 2003229547 A JP2003229547 A JP 2003229547A
Authority
JP
Japan
Prior art keywords
read
random access
magnetic random
access memory
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002153063A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229547A5 (https=
Inventor
Yoshihisa Iwata
佳久 岩田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002153063A priority Critical patent/JP2003229547A/ja
Publication of JP2003229547A publication Critical patent/JP2003229547A/ja
Publication of JP2003229547A5 publication Critical patent/JP2003229547A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2002153063A 2001-11-29 2002-05-27 磁気ランダムアクセスメモリ Pending JP2003229547A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002153063A JP2003229547A (ja) 2001-11-29 2002-05-27 磁気ランダムアクセスメモリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-365236 2001-11-29
JP2001365236 2001-11-29
JP2002153063A JP2003229547A (ja) 2001-11-29 2002-05-27 磁気ランダムアクセスメモリ

Publications (2)

Publication Number Publication Date
JP2003229547A true JP2003229547A (ja) 2003-08-15
JP2003229547A5 JP2003229547A5 (https=) 2005-08-25

Family

ID=27759498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002153063A Pending JP2003229547A (ja) 2001-11-29 2002-05-27 磁気ランダムアクセスメモリ

Country Status (1)

Country Link
JP (1) JP2003229547A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7054186B2 (en) 2004-04-16 2006-05-30 Kabushiki Kaisha Toshiba Magnetic random access memory
JP2009205769A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 磁気記憶装置
US7916522B2 (en) 2008-04-14 2011-03-29 Kabushiki Kaisha Toshiba Semiconductor memory device
WO2011135984A1 (ja) * 2010-04-28 2011-11-03 株式会社日立製作所 半導体記憶装置
KR101385637B1 (ko) 2012-10-31 2014-04-24 성균관대학교산학협력단 반도체 메모리 장치, 프로그램 방법 및 시스템
CN115315748A (zh) * 2020-03-27 2022-11-08 华为技术有限公司 一种磁性随机存储器及电子设备

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7054186B2 (en) 2004-04-16 2006-05-30 Kabushiki Kaisha Toshiba Magnetic random access memory
JP2009205769A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 磁気記憶装置
US7916522B2 (en) 2008-04-14 2011-03-29 Kabushiki Kaisha Toshiba Semiconductor memory device
WO2011135984A1 (ja) * 2010-04-28 2011-11-03 株式会社日立製作所 半導体記憶装置
US8750032B2 (en) 2010-04-28 2014-06-10 Hitachi, Ltd. Semiconductor recording device
KR101385637B1 (ko) 2012-10-31 2014-04-24 성균관대학교산학협력단 반도체 메모리 장치, 프로그램 방법 및 시스템
CN115315748A (zh) * 2020-03-27 2022-11-08 华为技术有限公司 一种磁性随机存储器及电子设备

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