CN115315748A - 一种磁性随机存储器及电子设备 - Google Patents

一种磁性随机存储器及电子设备 Download PDF

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Publication number
CN115315748A
CN115315748A CN202080098838.2A CN202080098838A CN115315748A CN 115315748 A CN115315748 A CN 115315748A CN 202080098838 A CN202080098838 A CN 202080098838A CN 115315748 A CN115315748 A CN 115315748A
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China
Prior art keywords
lines
voltage control
random access
line
access memory
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叶力
李文静
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

一种磁性随机存储器及电子设备，用以提高磁性随机存储器的存储密度。磁性随机存储器包括多个存储块以及多组同层互连线；多个存储块中的每个存储块包括多个结构单元以及多个电压控制线；多个结构单元中的每个结构单元包括依次堆叠的多层存储结构，多层存储结构中的每层存储结构包括电极线以及设置于电极线上的多个存储单元，多个存储单元中的每个存储单元包括一个磁性隧道结，每个存储单元的一端与电极线连接，另一端与多个电压控制线中的一个电压控制线连接；其中，多个存储块沿着电极线的方向平行排列，多组同层互连线与电极线平行，多组同层互连线用于连接每个存储块中位置对应的电压控制线。

Description

PCT国内申请，说明书已公开。

Claims (12)

  1. PCT国内申请，权利要求书已公开。
CN202080098838.2A 2020-03-27 2020-03-27 一种磁性随机存储器及电子设备 Pending CN115315748A (zh)

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PCT/CN2020/081833 WO2021189470A1 (zh) 2020-03-27 2020-03-27 一种磁性随机存储器及电子设备

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CN115315748A true CN115315748A (zh) 2022-11-08

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CN (1) CN115315748A (zh)
WO (1) WO2021189470A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100612878B1 (ko) * 2004-12-03 2006-08-14 삼성전자주식회사 자기 메모리 소자와 그 제조 및 동작방법
US7292467B2 (en) * 2005-04-22 2007-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic random access memory device
US7826260B2 (en) * 2008-10-27 2010-11-02 Seagate Technology Llc Spin-transfer torque memory self-reference read and write assist methods
CN101834271B (zh) * 2010-03-02 2011-09-14 清华大学 磁电随机存储单元及具有该磁电随机存储单元的存储器
US9172030B2 (en) * 2011-07-15 2015-10-27 The Johns Hopkins University Magneto-electronic devices and methods of production
CN102683581B (zh) * 2012-04-24 2014-09-24 清华大学 一种电压可调的磁阻变随机存储单元及其随机存储器
CN103280234B (zh) * 2013-05-28 2016-06-29 中国科学院苏州纳米技术与纳米仿生研究所 磁性随机存储器
CN110890458B (zh) * 2018-09-07 2024-04-12 上海磁宇信息科技有限公司 一种提高磁性随机存储器写入效率的方法

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