JP2003229259A - 有機電場発光表示装置の製造方法 - Google Patents

有機電場発光表示装置の製造方法

Info

Publication number
JP2003229259A
JP2003229259A JP2003020705A JP2003020705A JP2003229259A JP 2003229259 A JP2003229259 A JP 2003229259A JP 2003020705 A JP2003020705 A JP 2003020705A JP 2003020705 A JP2003020705 A JP 2003020705A JP 2003229259 A JP2003229259 A JP 2003229259A
Authority
JP
Japan
Prior art keywords
display substrate
donor element
organic
electrode
donor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003020705A
Other languages
English (en)
Japanese (ja)
Inventor
Mitchell S Burberry
スチュワート バーバリー ミッチェル
Lee William Tutt
ウィリアム トゥット リー
Myron W Culver
ウィリアム カルバー マイロン
Ching Wan Tang
ワン タン チン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of JP2003229259A publication Critical patent/JP2003229259A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/18Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/048Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/351Metal complexes comprising lanthanides or actinides, e.g. comprising europium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
JP2003020705A 2002-01-30 2003-01-29 有機電場発光表示装置の製造方法 Pending JP2003229259A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/060670 2002-01-30
US10/060,670 US6610455B1 (en) 2002-01-30 2002-01-30 Making electroluminscent display devices

Publications (1)

Publication Number Publication Date
JP2003229259A true JP2003229259A (ja) 2003-08-15

Family

ID=27610065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003020705A Pending JP2003229259A (ja) 2002-01-30 2003-01-29 有機電場発光表示装置の製造方法

Country Status (6)

Country Link
US (1) US6610455B1 (US06610455-20030826-C00011.png)
EP (1) EP1335637B1 (US06610455-20030826-C00011.png)
JP (1) JP2003229259A (US06610455-20030826-C00011.png)
KR (1) KR100910438B1 (US06610455-20030826-C00011.png)
CN (1) CN100416849C (US06610455-20030826-C00011.png)
TW (1) TWI259738B (US06610455-20030826-C00011.png)

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JP2006148045A (ja) * 2004-11-17 2006-06-08 Samsung Sdi Co Ltd 低分子有機電界発光素子及びその製造方法
JP2006309955A (ja) * 2005-04-26 2006-11-09 Sony Corp 有機電界発光素子の製造方法および有機電界発光素子
KR100699993B1 (ko) * 2004-08-30 2007-03-26 삼성에스디아이 주식회사 레이저 열전사 방법
JP2008500730A (ja) * 2004-05-27 2008-01-10 イーストマン コダック カンパニー 複数の金属層を備えるoledのドナー
JP2009238740A (ja) * 2008-03-07 2009-10-15 Semiconductor Energy Lab Co Ltd 成膜方法及び発光装置の作製方法
US7632714B2 (en) 2006-07-31 2009-12-15 Sony Corporation Method for manufacturing a display device
US7993806B2 (en) 2007-04-02 2011-08-09 Sony Corporation Transfer substrate, and fabrication process of organic electroluminescent devices
WO2011114873A1 (ja) * 2010-03-18 2011-09-22 株式会社半導体エネルギー研究所 成膜方法及び成膜用基板の作製方法
US8207088B2 (en) 2007-08-16 2012-06-26 Sony Corporation Transfer substrate and method for fabricating organic electroluminescent element
US8900675B2 (en) 2010-03-18 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing deposition substrate
US8951816B2 (en) 2010-03-18 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Film forming method

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KR20060020031A (ko) * 2004-08-30 2006-03-06 삼성에스디아이 주식회사 레이저 열전사 장치
KR100860005B1 (ko) * 2004-09-21 2008-09-25 삼성에스디아이 주식회사 유기 전계 발광 소자의 제조 방법
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KR100635579B1 (ko) 2004-12-20 2006-10-17 삼성에스디아이 주식회사 레이저 열 전사장치, 상기 장치를 사용하는 레이저 열전사법 및 상기 장치를 사용하는 유기전계발광표시장치제조방법
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JP2006309994A (ja) * 2005-04-27 2006-11-09 Sony Corp 転写用基板および転写方法ならびに表示装置の製造方法
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GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
JP4420065B2 (ja) * 2007-05-21 2010-02-24 ソニー株式会社 転写方法および転写装置ならびに有機発光素子の製造方法
KR100884253B1 (ko) * 2007-07-04 2009-02-17 주식회사 아이엠티 건식세정장치 및 방법
US8425974B2 (en) * 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
WO2009099002A1 (en) * 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5416987B2 (ja) 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US20090218219A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing Apparatus
JP5079722B2 (ja) 2008-03-07 2012-11-21 株式会社半導体エネルギー研究所 発光装置の作製方法
US8182863B2 (en) 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
US7932112B2 (en) * 2008-04-14 2011-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
CN102131950B (zh) * 2008-06-19 2014-05-28 实用光有限公司 光感应图案
WO2010041262A2 (en) * 2008-10-12 2010-04-15 Utilight Ltd. Solar cells and method of manufacturing thereof
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
KR20150109013A (ko) * 2014-03-18 2015-10-01 삼성디스플레이 주식회사 유기막 패턴 형성용 마스크, 이를 이용한 유기막 패턴 형성 방법 및 유기 발광 표시 장치의 제조 방법
KR102181239B1 (ko) * 2014-09-03 2020-11-23 삼성디스플레이 주식회사 박막 형성 장치 및 그를 이용한 박막 형성 방법
KR102352406B1 (ko) 2015-03-02 2022-01-19 삼성디스플레이 주식회사 표시 장치의 제조 방법 및 표시 장치
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CN107706223B (zh) * 2017-09-29 2020-08-14 京东方科技集团股份有限公司 Oled显示结构及显示器、空间点定位系统及方法
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KR101101864B1 (ko) * 2004-05-27 2012-01-05 글로벌 오엘이디 테크놀러지 엘엘씨 유기 물질을 전사하여 oled 디바이스를 형성하기 위한 도너 소자
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US7959993B2 (en) 2004-11-17 2011-06-14 Samsung Mobile Display Co., Ltd. Small molecular organic electroluminescent display device and method of fabricating the same
JP2006309955A (ja) * 2005-04-26 2006-11-09 Sony Corp 有機電界発光素子の製造方法および有機電界発光素子
US7632714B2 (en) 2006-07-31 2009-12-15 Sony Corporation Method for manufacturing a display device
KR101361017B1 (ko) * 2006-07-31 2014-02-10 소니 주식회사 표시 장치의 제조 방법
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WO2011114873A1 (ja) * 2010-03-18 2011-09-22 株式会社半導体エネルギー研究所 成膜方法及び成膜用基板の作製方法
US8815352B2 (en) 2010-03-18 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Film forming method and method for manufacturing film-formation substrate
US8900675B2 (en) 2010-03-18 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing deposition substrate
US8951816B2 (en) 2010-03-18 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Film forming method
JP5666556B2 (ja) * 2010-03-18 2015-02-12 株式会社半導体エネルギー研究所 成膜方法及び成膜用基板の作製方法

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CN1436025A (zh) 2003-08-13
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TWI259738B (en) 2006-08-01
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