JP2003218458A - 半導体発光装置 - Google Patents

半導体発光装置

Info

Publication number
JP2003218458A
JP2003218458A JP2002014463A JP2002014463A JP2003218458A JP 2003218458 A JP2003218458 A JP 2003218458A JP 2002014463 A JP2002014463 A JP 2002014463A JP 2002014463 A JP2002014463 A JP 2002014463A JP 2003218458 A JP2003218458 A JP 2003218458A
Authority
JP
Japan
Prior art keywords
layer
light emitting
emitting device
saturable absorption
saturable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002014463A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003218458A5 (enExample
Inventor
Tomoteru Ono
智輝 大野
Shigetoshi Ito
茂稔 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2002014463A priority Critical patent/JP2003218458A/ja
Publication of JP2003218458A publication Critical patent/JP2003218458A/ja
Publication of JP2003218458A5 publication Critical patent/JP2003218458A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP2002014463A 2002-01-23 2002-01-23 半導体発光装置 Pending JP2003218458A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002014463A JP2003218458A (ja) 2002-01-23 2002-01-23 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002014463A JP2003218458A (ja) 2002-01-23 2002-01-23 半導体発光装置

Publications (2)

Publication Number Publication Date
JP2003218458A true JP2003218458A (ja) 2003-07-31
JP2003218458A5 JP2003218458A5 (enExample) 2005-06-23

Family

ID=27651134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002014463A Pending JP2003218458A (ja) 2002-01-23 2002-01-23 半導体発光装置

Country Status (1)

Country Link
JP (1) JP2003218458A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223148A (ja) * 2004-02-05 2005-08-18 Sharp Corp 窒化物系半導体レーザ素子とそれを含む光学式情報処理装置
JP2006080225A (ja) * 2004-09-08 2006-03-23 Ricoh Co Ltd 自励発振型半導体レーザ、自励発振型半導体レーザの製造方法、光センサ装置、光伝送システム及び記録再生装置
US7606278B2 (en) 2006-05-02 2009-10-20 Sony Corporation Semiconductor laser, method of manufacturing semiconductor device, optical pickup, and optical disk apparatus
US7653105B2 (en) 2006-11-09 2010-01-26 Sony Corporation Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system
JP2012195475A (ja) * 2011-03-17 2012-10-11 Sony Corp 半導体レーザ素子組立体及びその駆動方法
JP2023084807A (ja) * 2021-12-08 2023-06-20 古河電気工業株式会社 光源、光源装置、光源の駆動方法、ラマン増幅器、およびラマン増幅システム

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223148A (ja) * 2004-02-05 2005-08-18 Sharp Corp 窒化物系半導体レーザ素子とそれを含む光学式情報処理装置
JP2006080225A (ja) * 2004-09-08 2006-03-23 Ricoh Co Ltd 自励発振型半導体レーザ、自励発振型半導体レーザの製造方法、光センサ装置、光伝送システム及び記録再生装置
US7606278B2 (en) 2006-05-02 2009-10-20 Sony Corporation Semiconductor laser, method of manufacturing semiconductor device, optical pickup, and optical disk apparatus
US7653105B2 (en) 2006-11-09 2010-01-26 Sony Corporation Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system
US7867798B2 (en) 2006-11-09 2011-01-11 Sony Corporation Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system
JP2012195475A (ja) * 2011-03-17 2012-10-11 Sony Corp 半導体レーザ素子組立体及びその駆動方法
JP2023084807A (ja) * 2021-12-08 2023-06-20 古河電気工業株式会社 光源、光源装置、光源の駆動方法、ラマン増幅器、およびラマン増幅システム

Similar Documents

Publication Publication Date Title
JP4678805B2 (ja) 半導体発光装置およびその製造方法
US6984841B2 (en) Nitride semiconductor light emitting element and production thereof
JP2002094189A (ja) 窒化物半導体レーザ素子およびそれを用いた光学装置
JP2010118702A (ja) 窒化物半導体発光素子
JP3659621B2 (ja) 窒化物系半導体レーザ装置の製造方法
JPWO2003038956A1 (ja) 半導体発光素子の製造方法
CN102237634A (zh) 半导体激光器及其制造方法
JP4526260B2 (ja) 窒化物半導体発光素子
JP2002151786A (ja) 半導体レーザ素子
JP4646095B2 (ja) 半導体発光装置およびその製造方法ならびに光学式情報記録再生装置
JP2010098070A (ja) 端面発光型半導体レーザ素子及びその製造方法
JP3457516B2 (ja) 窒化ガリウム系化合物半導体素子
US20040056242A1 (en) Nitride semiconductor light emitting element and manufacturing method thereof
JP4756784B2 (ja) 窒化物半導体レーザ素子とその製造方法
JPH10303459A (ja) 窒化ガリウム系半導体発光素子およびその製造方法
JP4216011B2 (ja) 窒化物半導体レーザ素子チップとそれを含むレーザ装置
JP2007329487A (ja) レーザ素子および光記録再生装置
JP4197030B2 (ja) 半導体レーザ、半導体レーザの製造方法、光ピックアップおよび光ディスク装置
JP2002246694A (ja) 窒化物半導体発光素子とその製法
JP2003198065A (ja) 窒化物半導体レーザ素子および光記録再生装置
JP4330319B2 (ja) 窒化物半導体発光素子およびその製造方法
JP2002141617A (ja) 窒化物半導体発光素子とそれを含む光学装置
JP4426980B2 (ja) 半導体発光素子の製造方法
JP2010003882A (ja) 端面発光型半導体レーザ素子
JP2000332365A (ja) 半導体発光素子及びその製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Effective date: 20041005

Free format text: JAPANESE INTERMEDIATE CODE: A523

A621 Written request for application examination

Effective date: 20041005

Free format text: JAPANESE INTERMEDIATE CODE: A621

A977 Report on retrieval

Effective date: 20060420

Free format text: JAPANESE INTERMEDIATE CODE: A971007

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060425

A521 Written amendment

Effective date: 20060623

Free format text: JAPANESE INTERMEDIATE CODE: A523

A02 Decision of refusal

Effective date: 20070123

Free format text: JAPANESE INTERMEDIATE CODE: A02