JP2003218458A5 - - Google Patents

Download PDF

Info

Publication number
JP2003218458A5
JP2003218458A5 JP2002014463A JP2002014463A JP2003218458A5 JP 2003218458 A5 JP2003218458 A5 JP 2003218458A5 JP 2002014463 A JP2002014463 A JP 2002014463A JP 2002014463 A JP2002014463 A JP 2002014463A JP 2003218458 A5 JP2003218458 A5 JP 2003218458A5
Authority
JP
Japan
Prior art keywords
layer
emitting device
semiconductor light
light emitting
saturable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002014463A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003218458A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002014463A priority Critical patent/JP2003218458A/ja
Priority claimed from JP2002014463A external-priority patent/JP2003218458A/ja
Publication of JP2003218458A publication Critical patent/JP2003218458A/ja
Publication of JP2003218458A5 publication Critical patent/JP2003218458A5/ja
Pending legal-status Critical Current

Links

JP2002014463A 2002-01-23 2002-01-23 半導体発光装置 Pending JP2003218458A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002014463A JP2003218458A (ja) 2002-01-23 2002-01-23 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002014463A JP2003218458A (ja) 2002-01-23 2002-01-23 半導体発光装置

Publications (2)

Publication Number Publication Date
JP2003218458A JP2003218458A (ja) 2003-07-31
JP2003218458A5 true JP2003218458A5 (enExample) 2005-06-23

Family

ID=27651134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002014463A Pending JP2003218458A (ja) 2002-01-23 2002-01-23 半導体発光装置

Country Status (1)

Country Link
JP (1) JP2003218458A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4901068B2 (ja) * 2004-02-05 2012-03-21 シャープ株式会社 窒化物系半導体レーザ素子とそれを含む光学式情報処理装置
JP2006080225A (ja) * 2004-09-08 2006-03-23 Ricoh Co Ltd 自励発振型半導体レーザ、自励発振型半導体レーザの製造方法、光センサ装置、光伝送システム及び記録再生装置
JP4193867B2 (ja) 2006-05-02 2008-12-10 ソニー株式会社 ＧａＮ系半導体レーザの製造方法
JP4197030B2 (ja) 2006-11-09 2008-12-17 ソニー株式会社 半導体レーザ、半導体レーザの製造方法、光ピックアップおよび光ディスク装置
JP5743624B2 (ja) * 2011-03-17 2015-07-01 ソニー株式会社 半導体レーザ素子組立体及びその駆動方法
JP2023084807A (ja) * 2021-12-08 2023-06-20 古河電気工業株式会社 光源、光源装置、光源の駆動方法、ラマン増幅器、およびラマン増幅システム

Similar Documents

Publication Publication Date Title
ATE464658T1 (de) Iii-nitridverbindungs-halbleiter- lichtemissionsbauelement
EP1536486A4 (en) COMPOSITE SEMICONDUCTOR ELEMENT ON GALLIUM NITRID BASE
EP1551063A4 (en) COMPOSITE GALLIUM NITRIDE SEMICONDUCTOR EQUIPMENT AND MANUFACTURING METHOD
TW567620B (en) Ultraviolet ray emitting element
TW200637091A (en) Semiconductor light-emitting device
WO2002097904A3 (en) Group iii nitride based light emitting diode structures with a quantum well and superlattice
JP2007036298A5 (enExample)
TWI359506B (en) Light-emitting device and manufacturing method the
EP1667292A4 (en) SEMICONDUCTOR SEMICONDUCTOR COMPONENT OF GAN III-V COMPOSITION AND METHOD OF MANUFACTURING THEREOF
JP2006286942A5 (enExample)
EP1063711A4 (en) NITRIDE ELECTROLUMINESCENT SEMICONDUCTOR DEVICE
TW200507301A (en) Heterostructures for III-nitride light emitting devices
WO2005094271A3 (en) Colloidal quantum dot light emitting diodes
JP2006324685A5 (enExample)
TW200735420A (en) Nitride semiconductor light-emitting element
JP2010541217A5 (enExample)
JP2015149342A5 (enExample)
JP4824129B2 (ja) 発光素子
JP2004253802A5 (enExample)
JP2003060234A5 (enExample)
TW200644281A (en) Light-emitting device
TW200605403A (en) Improved substrate buffer structure for group Ⅲ nitride devices
CN204760413U (zh) 多量子阱结构及包含该多量子阱结构的氮化物发光二极管
JP2003218065A5 (enExample)
JP2003060314A5 (enExample)