JP2003209228A - 磁気記憶装置及びその製造方法 - Google Patents
磁気記憶装置及びその製造方法Info
- Publication number
- JP2003209228A JP2003209228A JP2002321358A JP2002321358A JP2003209228A JP 2003209228 A JP2003209228 A JP 2003209228A JP 2002321358 A JP2002321358 A JP 2002321358A JP 2002321358 A JP2002321358 A JP 2002321358A JP 2003209228 A JP2003209228 A JP 2003209228A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- magnetic
- memory device
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 180
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000002955 isolation Methods 0.000 claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims description 76
- 230000000694 effects Effects 0.000 claims description 43
- 230000005415 magnetization Effects 0.000 claims description 40
- 230000015654 memory Effects 0.000 claims description 35
- 230000002093 peripheral effect Effects 0.000 claims description 30
- 238000003860 storage Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims 1
- 230000005294 ferromagnetic effect Effects 0.000 description 30
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 230000005290 antiferromagnetic effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910003286 Ni-Mn Inorganic materials 0.000 description 1
- 229910005811 NiMnSb Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001291 heusler alloy Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002321358A JP2003209228A (ja) | 2001-11-07 | 2002-11-05 | 磁気記憶装置及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-342289 | 2001-11-07 | ||
| JP2001342289 | 2001-11-07 | ||
| JP2002321358A JP2003209228A (ja) | 2001-11-07 | 2002-11-05 | 磁気記憶装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003209228A true JP2003209228A (ja) | 2003-07-25 |
| JP2003209228A5 JP2003209228A5 (enrdf_load_stackoverflow) | 2006-04-06 |
Family
ID=27666972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002321358A Pending JP2003209228A (ja) | 2001-11-07 | 2002-11-05 | 磁気記憶装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003209228A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005251382A (ja) * | 2004-03-05 | 2005-09-15 | Commissariat A L'energie Atomique | 高い電流密度を有する磁気抵抗ランダム・アクセス・メモリ |
| JP2006245208A (ja) * | 2005-03-02 | 2006-09-14 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
| JP2008544490A (ja) * | 2005-06-08 | 2008-12-04 | マイクロン テクノロジー， インク． | バルクシリコン上のキャパシタレスｄｒａｍ |
| JP2009527869A (ja) * | 2006-02-24 | 2009-07-30 | グランディス インコーポレイテッド | 大電流および大電流対称性を有する電流駆動メモリセル |
| US7804667B2 (en) | 2006-05-25 | 2010-09-28 | Tdk Corporation | Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration |
| RU2463676C2 (ru) * | 2008-02-01 | 2012-10-10 | Квэлкомм Инкорпорейтед | Ячейка магнитного туннельного перехода, содержащая множество магнитных доменов |
-
2002
- 2002-11-05 JP JP2002321358A patent/JP2003209228A/ja active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005251382A (ja) * | 2004-03-05 | 2005-09-15 | Commissariat A L'energie Atomique | 高い電流密度を有する磁気抵抗ランダム・アクセス・メモリ |
| JP2006245208A (ja) * | 2005-03-02 | 2006-09-14 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
| JP2008544490A (ja) * | 2005-06-08 | 2008-12-04 | マイクロン テクノロジー， インク． | バルクシリコン上のキャパシタレスｄｒａｍ |
| US8158471B2 (en) | 2005-06-08 | 2012-04-17 | Micron Technology, Inc. | Capacitorless DRAM on bulk silicon |
| US8466517B2 (en) | 2005-06-08 | 2013-06-18 | Micron Technology, Inc. | Capacitorless DRAM on bulk silicon |
| US8971086B2 (en) | 2005-06-08 | 2015-03-03 | Micron Technology, Inc. | Capacitorless DRAM on bulk silicon |
| JP2009527869A (ja) * | 2006-02-24 | 2009-07-30 | グランディス インコーポレイテッド | 大電流および大電流対称性を有する電流駆動メモリセル |
| US7804667B2 (en) | 2006-05-25 | 2010-09-28 | Tdk Corporation | Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration |
| RU2463676C2 (ru) * | 2008-02-01 | 2012-10-10 | Квэлкомм Инкорпорейтед | Ячейка магнитного туннельного перехода, содержащая множество магнитных доменов |
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Legal Events
| Date | Code | Title | Description |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060221 |
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| A521 | Request for written amendment filed |
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| A02 | Decision of refusal |
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