JP2003209228A5 - - Google Patents

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Publication number
JP2003209228A5
JP2003209228A5 JP2002321358A JP2002321358A JP2003209228A5 JP 2003209228 A5 JP2003209228 A5 JP 2003209228A5 JP 2002321358 A JP2002321358 A JP 2002321358A JP 2002321358 A JP2002321358 A JP 2002321358A JP 2003209228 A5 JP2003209228 A5 JP 2003209228A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002321358A
Other languages
Japanese (ja)
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JP2003209228A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002321358A priority Critical patent/JP2003209228A/ja
Priority claimed from JP2002321358A external-priority patent/JP2003209228A/ja
Publication of JP2003209228A publication Critical patent/JP2003209228A/ja
Publication of JP2003209228A5 publication Critical patent/JP2003209228A5/ja
Pending legal-status Critical Current

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JP2002321358A 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法 Pending JP2003209228A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002321358A JP2003209228A (ja) 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-342289 2001-11-07
JP2001342289 2001-11-07
JP2002321358A JP2003209228A (ja) 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003209228A JP2003209228A (ja) 2003-07-25
JP2003209228A5 true JP2003209228A5 (enrdf_load_stackoverflow) 2006-04-06

Family

ID=27666972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002321358A Pending JP2003209228A (ja) 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2003209228A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2867300B1 (fr) * 2004-03-05 2006-04-28 Commissariat Energie Atomique Memoire vive magnetoresistive a haute densite de courant
JP4951864B2 (ja) * 2005-03-02 2012-06-13 Ｔｄｋ株式会社 磁気検出素子
US7538389B2 (en) 2005-06-08 2009-05-26 Micron Technology, Inc. Capacitorless DRAM on bulk silicon
US7515457B2 (en) * 2006-02-24 2009-04-07 Grandis, Inc. Current driven memory cells having enhanced current and enhanced current symmetry
JP2007317824A (ja) 2006-05-25 2007-12-06 Tdk Corp 磁気抵抗効果素子およびその製造方法、ならびに薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
US7936596B2 (en) * 2008-02-01 2011-05-03 Qualcomm Incorporated Magnetic tunnel junction cell including multiple magnetic domains

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