JP2003209179A - 容量素子及びその製造方法 - Google Patents

容量素子及びその製造方法

Info

Publication number
JP2003209179A
JP2003209179A JP2002006323A JP2002006323A JP2003209179A JP 2003209179 A JP2003209179 A JP 2003209179A JP 2002006323 A JP2002006323 A JP 2002006323A JP 2002006323 A JP2002006323 A JP 2002006323A JP 2003209179 A JP2003209179 A JP 2003209179A
Authority
JP
Japan
Prior art keywords
film
dielectric film
capacitive element
bst
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002006323A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003209179A5 (enExample
Inventor
John Baniecki
ベネキ ジョン
Kenji Shioga
健司 塩賀
Kazuaki Kurihara
和明 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2002006323A priority Critical patent/JP2003209179A/ja
Priority to US10/340,713 priority patent/US6803617B2/en
Publication of JP2003209179A publication Critical patent/JP2003209179A/ja
Publication of JP2003209179A5 publication Critical patent/JP2003209179A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2002006323A 2002-01-15 2002-01-15 容量素子及びその製造方法 Pending JP2003209179A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002006323A JP2003209179A (ja) 2002-01-15 2002-01-15 容量素子及びその製造方法
US10/340,713 US6803617B2 (en) 2002-01-15 2003-01-13 Capacitor and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002006323A JP2003209179A (ja) 2002-01-15 2002-01-15 容量素子及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003209179A true JP2003209179A (ja) 2003-07-25
JP2003209179A5 JP2003209179A5 (enExample) 2005-08-04

Family

ID=19191214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002006323A Pending JP2003209179A (ja) 2002-01-15 2002-01-15 容量素子及びその製造方法

Country Status (2)

Country Link
US (1) US6803617B2 (enExample)
JP (1) JP2003209179A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128642A (ja) * 2004-09-30 2006-05-18 Tdk Corp 薄膜誘電体、薄膜誘電体素子及びその製造方法
US7176510B2 (en) 2003-09-26 2007-02-13 Kyocera Corporation Thin film capacitor
US7763921B2 (en) 2006-11-14 2010-07-27 Fujitsu Semiconductor Limited Semiconductor device and manufacturing method thereof
US7939347B2 (en) 2008-08-28 2011-05-10 Fujitsu Semiconductor Limited Semiconductor device manufacturing method
US8373212B2 (en) 2006-09-11 2013-02-12 Fujitsu Semiconductor Limited Semiconductor device and method for manufacturing the same
CN111463348A (zh) * 2019-01-18 2020-07-28 住友电工光电子器件创新株式会社 半导体器件
JPWO2020246363A1 (enExample) * 2019-06-05 2020-12-10

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876536B2 (en) * 2002-12-27 2005-04-05 Tdk Corporation Thin film capacitor and method for fabricating the same
US6885540B2 (en) 2003-02-26 2005-04-26 Tdk Corporation Multi-layered unit including electrode and dielectric layer
US7067458B2 (en) * 2003-02-26 2006-06-27 Tdk Corporation Multi-layered unit including electrode and dielectric layer
US6958900B2 (en) 2003-02-26 2005-10-25 Tdk Corporation Multi-layered unit including electrode and dielectric layer
US6977806B1 (en) 2003-02-26 2005-12-20 Tdk Corporation Multi-layered unit including electrode and dielectric layer
US20040164416A1 (en) * 2003-02-26 2004-08-26 Tdk Corporation Multi-layered unit
US6891714B2 (en) 2003-02-26 2005-05-10 Tdk Corporation Multi-layered unit including electrode and dielectric layer
WO2004077565A1 (ja) * 2003-02-27 2004-09-10 Tdk Corporation 薄膜容量素子ならびにそれを含んだ電子回路および電子機器
US6930875B2 (en) * 2003-06-12 2005-08-16 Tdk Corporation Multi-layered unit
JP2006066515A (ja) * 2004-08-25 2006-03-09 Seiko Epson Corp 強誘電体メモリ及びその製造方法
WO2006034119A1 (en) * 2004-09-17 2006-03-30 Massachusetts Institue Of Technology BST INTEGRATION USING THIN BUFFER LAYER GROWN DIRECTLY ONTO SiO2/Si SUBSTRATE
US7241691B2 (en) * 2005-03-28 2007-07-10 Freescale Semiconductor, Inc. Conducting metal oxide with additive as p-MOS device electrode
US7510956B2 (en) * 2006-01-30 2009-03-31 Fressscale Semiconductor, Inc. MOS device with multi-layer gate stack
FR2936242B1 (fr) * 2008-09-23 2010-11-05 Commissariat Energie Atomique Procede de preparation d'un materiau oxyde ceramique a structure pyrochlore presentant une constante dielectrique elevee et mise en oeuvre de ce procede pour des applications de microelectronique
US7989919B2 (en) * 2009-06-03 2011-08-02 Infineon Technologies Ag Capacitor arrangement and method for making same
US8723299B2 (en) 2010-06-01 2014-05-13 Infineon Technologies Ag Method and system for forming a thin semiconductor device
KR101596460B1 (ko) * 2011-10-01 2016-02-26 인텔 코포레이션 온-칩 커패시터 및 그 조립 방법
US11222945B2 (en) * 2017-12-29 2022-01-11 Texas Instruments Incorporated High voltage isolation structure and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3594787B2 (ja) 1998-02-03 2004-12-02 富士通株式会社 半導体装置及びその製造方法
US6172385B1 (en) 1998-10-30 2001-01-09 International Business Machines Corporation Multilayer ferroelectric capacitor structure
JP3377762B2 (ja) * 1999-05-19 2003-02-17 株式会社半導体理工学研究センター 強誘電体不揮発性メモリ
US6720596B2 (en) * 2000-10-17 2004-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for driving the same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7176510B2 (en) 2003-09-26 2007-02-13 Kyocera Corporation Thin film capacitor
JP2006128642A (ja) * 2004-09-30 2006-05-18 Tdk Corp 薄膜誘電体、薄膜誘電体素子及びその製造方法
US9373676B2 (en) 2006-09-11 2016-06-21 Fujitsu Semiconductor Limited Semiconductor device and method for manufacturing the same
US8373212B2 (en) 2006-09-11 2013-02-12 Fujitsu Semiconductor Limited Semiconductor device and method for manufacturing the same
US7763921B2 (en) 2006-11-14 2010-07-27 Fujitsu Semiconductor Limited Semiconductor device and manufacturing method thereof
US8110411B2 (en) 2006-11-14 2012-02-07 Fujitsu Semiconductor Limited Semiconductor device and manufacturing method thereof
US8367428B2 (en) 2006-11-14 2013-02-05 Fujitsu Semiconductor Limited Semiconductor device and manufacturing method thereof
US7939347B2 (en) 2008-08-28 2011-05-10 Fujitsu Semiconductor Limited Semiconductor device manufacturing method
CN111463348A (zh) * 2019-01-18 2020-07-28 住友电工光电子器件创新株式会社 半导体器件
JP2020120110A (ja) * 2019-01-18 2020-08-06 住友電工デバイス・イノベーション株式会社 半導体装置
JPWO2020246363A1 (enExample) * 2019-06-05 2020-12-10
WO2020246363A1 (ja) * 2019-06-05 2020-12-10 国立研究開発法人物質・材料研究機構 誘電体膜およびそれを用いたキャパシタならびに誘電体膜の製造方法
JP7226747B2 (ja) 2019-06-05 2023-02-21 国立研究開発法人物質・材料研究機構 誘電体膜およびそれを用いたキャパシタならびに誘電体膜の製造方法

Also Published As

Publication number Publication date
US6803617B2 (en) 2004-10-12
US20030136998A1 (en) 2003-07-24

Similar Documents

Publication Publication Date Title
JP2003209179A (ja) 容量素子及びその製造方法
US7349195B2 (en) Thin film capacitor and method for manufacturing the same
US20090026514A1 (en) Semiconductor device and manufacturing method thereof
JPH0668529A (ja) 強誘電性素子のための多層電極
US20040150027A1 (en) Ferroelectric memory devices
US20090130457A1 (en) Dielectric structure
JPH06350029A (ja) 微小電子回路構造とその製法
US6674633B2 (en) Process for producing a strontium ruthenium oxide protective layer on a top electrode
KR100382719B1 (ko) 강유전체 커패시터를 포함하는 반도체 장치 및 그 제조방법
CN1615538A (zh) 具改善阻障性质之阻障堆栈
US7031138B2 (en) Ferroelectric capacitor and process for its manufacture
US6236113B1 (en) Iridium composite barrier structure and method for same
JP2004296929A (ja) 強誘電体キャパシタの製造方法、強誘電体キャパシタ、記憶素子、電子素子、メモリ装置及び電子機器
KR20000014388A (ko) 강유전체 메모리 커패시터 및 그 제조방법
JP2004153006A (ja) 容量素子の製造方法
US20060214213A1 (en) Thin-film capacitor element and semiconductor device
US20040185653A1 (en) Semiconductor device and method for fabricating the same
JPH0620866A (ja) 誘電体素子
KR100349687B1 (ko) 강유전체 캐패시터 및 그의 제조 방법
JPH113976A (ja) 誘電体素子、強誘電体メモリおよびその動作方法
JP2002289809A (ja) 半導体装置およびその製造方法
KR19980029365A (ko) 강유전체 캐패시터의 제조방법
JPH11163271A (ja) キャパシタの製法
JP2000077612A (ja) 半導体装置
JP2000228506A (ja) 半導体装置及び半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050111

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050111

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070411

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070424

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070622

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090407