JP2003209178A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2003209178A
JP2003209178A JP2002005920A JP2002005920A JP2003209178A JP 2003209178 A JP2003209178 A JP 2003209178A JP 2002005920 A JP2002005920 A JP 2002005920A JP 2002005920 A JP2002005920 A JP 2002005920A JP 2003209178 A JP2003209178 A JP 2003209178A
Authority
JP
Japan
Prior art keywords
wiring
circuit
semiconductor device
block
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002005920A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003209178A5 (OSRAM
Inventor
Toshiyuki Matsubara
利之 松原
Hideo Matsui
秀夫 松井
Hiroki Takahashi
裕樹 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002005920A priority Critical patent/JP2003209178A/ja
Priority to US10/171,599 priority patent/US6621171B2/en
Priority to DE10236877A priority patent/DE10236877A1/de
Priority to KR10-2002-0056033A priority patent/KR100463945B1/ko
Publication of JP2003209178A publication Critical patent/JP2003209178A/ja
Publication of JP2003209178A5 publication Critical patent/JP2003209178A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2002005920A 2002-01-15 2002-01-15 半導体装置 Pending JP2003209178A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002005920A JP2003209178A (ja) 2002-01-15 2002-01-15 半導体装置
US10/171,599 US6621171B2 (en) 2002-01-15 2002-06-17 Semiconductor device having a wire laid between pads
DE10236877A DE10236877A1 (de) 2002-01-15 2002-08-12 Halbleitervorrichtung mit einer zwischen Kontaktflächen angeordneten Leiterbahn
KR10-2002-0056033A KR100463945B1 (ko) 2002-01-15 2002-09-16 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002005920A JP2003209178A (ja) 2002-01-15 2002-01-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2003209178A true JP2003209178A (ja) 2003-07-25
JP2003209178A5 JP2003209178A5 (OSRAM) 2005-08-04

Family

ID=19191164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002005920A Pending JP2003209178A (ja) 2002-01-15 2002-01-15 半導体装置

Country Status (4)

Country Link
US (1) US6621171B2 (OSRAM)
JP (1) JP2003209178A (OSRAM)
KR (1) KR100463945B1 (OSRAM)
DE (1) DE10236877A1 (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003099414A (ja) * 2001-09-21 2003-04-04 Mitsubishi Electric Corp 半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6166403A (en) * 1997-11-12 2000-12-26 Lsi Logic Corporation Integrated circuit having embedded memory with electromagnetic shield
JP2000077609A (ja) * 1998-08-28 2000-03-14 Hitachi Ltd 半導体集積回路装置
KR100688476B1 (ko) * 2000-05-31 2007-03-08 삼성전자주식회사 칩 면적을 줄이기 위한 레이아웃 구조를 갖는 고속 메모리장치

Also Published As

Publication number Publication date
KR100463945B1 (ko) 2004-12-30
US6621171B2 (en) 2003-09-16
DE10236877A1 (de) 2003-07-24
US20030132532A1 (en) 2003-07-17
KR20030062209A (ko) 2003-07-23

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