JP2003179212A5 - - Google Patents
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- Publication number
- JP2003179212A5 JP2003179212A5 JP2001378875A JP2001378875A JP2003179212A5 JP 2003179212 A5 JP2003179212 A5 JP 2003179212A5 JP 2001378875 A JP2001378875 A JP 2001378875A JP 2001378875 A JP2001378875 A JP 2001378875A JP 2003179212 A5 JP2003179212 A5 JP 2003179212A5
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- capacitor
- film
- ferroelectric
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000001257 hydrogen Substances 0.000 description 22
- 229910052739 hydrogen Inorganic materials 0.000 description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 230000010287 polarization Effects 0.000 description 6
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- DKDQMLPMKQLBHQ-UHFFFAOYSA-N strontium;barium(2+);oxido(dioxo)niobium Chemical compound [Sr+2].[Ba+2].[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O DKDQMLPMKQLBHQ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001378875A JP2003179212A (ja) | 2001-12-12 | 2001-12-12 | キャパシタ、メモリ素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001378875A JP2003179212A (ja) | 2001-12-12 | 2001-12-12 | キャパシタ、メモリ素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003179212A JP2003179212A (ja) | 2003-06-27 |
| JP2003179212A5 true JP2003179212A5 (enrdf_load_stackoverflow) | 2005-06-09 |
Family
ID=19186470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001378875A Abandoned JP2003179212A (ja) | 2001-12-12 | 2001-12-12 | キャパシタ、メモリ素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003179212A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7101785B2 (en) * | 2003-07-22 | 2006-09-05 | Infineon Technologies Ag | Formation of a contact in a device, and the device including the contact |
| JP3851909B2 (ja) | 2004-03-18 | 2006-11-29 | 株式会社東芝 | 強誘電体記憶装置の製造方法 |
| KR100728962B1 (ko) * | 2004-11-08 | 2007-06-15 | 주식회사 하이닉스반도체 | 지르코늄산화막을 갖는 반도체소자의 캐패시터 및 그 제조방법 |
| CN101203957B (zh) | 2005-06-17 | 2011-03-30 | 富士通半导体股份有限公司 | 半导体装置的制造方法 |
| JP2007096178A (ja) * | 2005-09-30 | 2007-04-12 | Toshiba Corp | 半導体装置およびその製造方法 |
| CN114121953A (zh) * | 2020-08-31 | 2022-03-01 | 无锡华润微电子有限公司 | 存储单元结构、存储阵列结构及其制备方法 |
| CN116234297B (zh) * | 2022-01-18 | 2024-07-23 | 北京超弦存储器研究院 | 动态存储装置及其制备方法 |
-
2001
- 2001-12-12 JP JP2001378875A patent/JP2003179212A/ja not_active Abandoned
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