JP2003178979A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP2003178979A
JP2003178979A JP2002256221A JP2002256221A JP2003178979A JP 2003178979 A JP2003178979 A JP 2003178979A JP 2002256221 A JP2002256221 A JP 2002256221A JP 2002256221 A JP2002256221 A JP 2002256221A JP 2003178979 A JP2003178979 A JP 2003178979A
Authority
JP
Japan
Prior art keywords
semiconductor region
film
semiconductor
region
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002256221A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003178979A5 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002256221A priority Critical patent/JP2003178979A/ja
Publication of JP2003178979A publication Critical patent/JP2003178979A/ja
Publication of JP2003178979A5 publication Critical patent/JP2003178979A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002256221A 2001-08-30 2002-08-30 半導体装置の作製方法 Withdrawn JP2003178979A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002256221A JP2003178979A (ja) 2001-08-30 2002-08-30 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-262356 2001-08-30
JP2001262356 2001-08-30
JP2002256221A JP2003178979A (ja) 2001-08-30 2002-08-30 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2003178979A true JP2003178979A (ja) 2003-06-27
JP2003178979A5 JP2003178979A5 (enrdf_load_stackoverflow) 2005-10-27

Family

ID=26621341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002256221A Withdrawn JP2003178979A (ja) 2001-08-30 2002-08-30 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2003178979A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7410848B2 (en) 2003-06-30 2008-08-12 Advanced Lcd Technologies Development Center Co., Ltd. Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
US7638378B2 (en) 2007-02-23 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor device
JP2012182466A (ja) * 2005-06-10 2012-09-20 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02297923A (ja) * 1989-05-11 1990-12-10 Seiko Epson Corp 多結晶シリコン再結晶化法
JPH03145717A (ja) * 1989-10-31 1991-06-20 Kyocera Corp 半導体素子の製造方法
JPH05315362A (ja) * 1992-05-12 1993-11-26 Ricoh Co Ltd 半導体装置の製造方法及び液晶表示装置
JPH0799314A (ja) * 1993-05-26 1995-04-11 Semiconductor Energy Lab Co Ltd 半導体装置
JPH0878328A (ja) * 1994-09-08 1996-03-22 Mitsubishi Electric Corp 半導体層の溶融再結晶化方法，及び半導体層を溶融再結晶化するための装置
JPH08312466A (ja) * 1995-05-12 1996-11-26 Isuzu Motors Ltd ディーゼルエンジンのｅｇｒ制御装置および方法
JPH0927453A (ja) * 1994-09-16 1997-01-28 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH09172181A (ja) * 1995-12-15 1997-06-30 Sony Corp 薄膜半導体装置の製造方法
JPH1131660A (ja) * 1997-07-14 1999-02-02 Semiconductor Energy Lab Co Ltd 半導体膜の作製方法及び半導体装置の作製方法
JP2000081642A (ja) * 1998-07-06 2000-03-21 Hitachi Ltd 液晶表示装置およびその製造方法
JP2000114173A (ja) * 1998-08-07 2000-04-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2001035789A (ja) * 1998-07-17 2001-02-09 Semiconductor Energy Lab Co Ltd 結晶性半導体薄膜及びその作製方法並びに半導体装置及びその作製方法
JP2001126987A (ja) * 1999-10-29 2001-05-11 Fujitsu Ltd 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2001144300A (ja) * 1999-08-31 2001-05-25 Fujitsu Ltd 半導体装置及びその製造方法並びにシリコン薄膜の形成方法
JP2001156018A (ja) * 1999-11-29 2001-06-08 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法および半導体装置の作製方法
JP2001176796A (ja) * 1999-12-20 2001-06-29 Sharp Corp 半導体膜の形成方法および半導体装置

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02297923A (ja) * 1989-05-11 1990-12-10 Seiko Epson Corp 多結晶シリコン再結晶化法
JPH03145717A (ja) * 1989-10-31 1991-06-20 Kyocera Corp 半導体素子の製造方法
JPH05315362A (ja) * 1992-05-12 1993-11-26 Ricoh Co Ltd 半導体装置の製造方法及び液晶表示装置
JPH0799314A (ja) * 1993-05-26 1995-04-11 Semiconductor Energy Lab Co Ltd 半導体装置
JPH0878328A (ja) * 1994-09-08 1996-03-22 Mitsubishi Electric Corp 半導体層の溶融再結晶化方法，及び半導体層を溶融再結晶化するための装置
JPH0927453A (ja) * 1994-09-16 1997-01-28 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH08312466A (ja) * 1995-05-12 1996-11-26 Isuzu Motors Ltd ディーゼルエンジンのｅｇｒ制御装置および方法
JPH09172181A (ja) * 1995-12-15 1997-06-30 Sony Corp 薄膜半導体装置の製造方法
JPH1131660A (ja) * 1997-07-14 1999-02-02 Semiconductor Energy Lab Co Ltd 半導体膜の作製方法及び半導体装置の作製方法
JP2000081642A (ja) * 1998-07-06 2000-03-21 Hitachi Ltd 液晶表示装置およびその製造方法
JP2001035789A (ja) * 1998-07-17 2001-02-09 Semiconductor Energy Lab Co Ltd 結晶性半導体薄膜及びその作製方法並びに半導体装置及びその作製方法
JP2000114173A (ja) * 1998-08-07 2000-04-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2001144300A (ja) * 1999-08-31 2001-05-25 Fujitsu Ltd 半導体装置及びその製造方法並びにシリコン薄膜の形成方法
JP2001126987A (ja) * 1999-10-29 2001-05-11 Fujitsu Ltd 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2001156018A (ja) * 1999-11-29 2001-06-08 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法および半導体装置の作製方法
JP2001176796A (ja) * 1999-12-20 2001-06-29 Sharp Corp 半導体膜の形成方法および半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7410848B2 (en) 2003-06-30 2008-08-12 Advanced Lcd Technologies Development Center Co., Ltd. Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
US8114217B2 (en) 2003-06-30 2012-02-14 Sharp Kabushiki Kaisha Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
JP2012182466A (ja) * 2005-06-10 2012-09-20 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7638378B2 (en) 2007-02-23 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor device

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