JP2003177537A5 - - Google Patents

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Publication number
JP2003177537A5
JP2003177537A5 JP2002060583A JP2002060583A JP2003177537A5 JP 2003177537 A5 JP2003177537 A5 JP 2003177537A5 JP 2002060583 A JP2002060583 A JP 2002060583A JP 2002060583 A JP2002060583 A JP 2002060583A JP 2003177537 A5 JP2003177537 A5 JP 2003177537A5
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JP
Japan
Prior art keywords
group
substituent
carbon atoms
acid
resist film
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JP2002060583A
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Japanese (ja)
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JP4004820B2 (en
JP2003177537A (en
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Priority to JP2002060583A priority Critical patent/JP4004820B2/en
Priority claimed from JP2002060583A external-priority patent/JP4004820B2/en
Publication of JP2003177537A publication Critical patent/JP2003177537A/en
Publication of JP2003177537A5 publication Critical patent/JP2003177537A5/ja
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Publication of JP4004820B2 publication Critical patent/JP4004820B2/en
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Claims (2)

（ａ）下記一般式（Ｘ）で示される基を含有する構造単位を有し、酸の作用により分解してアルカリ現像液に対する溶解性が増大する樹脂、及び
（ｂ）活性放射線の照射により酸を発生する化合物
を含有することを特徴とするポジ型電子線、Ｘ線又はＥＵＶ用レジスト組成物。
Figure 2003177537
式（Ｘ）中、Ｒ1 、Ｒ2は、同一でも異なっていてもよく、水素原子、炭素数１〜４のアルキル基を表し、Ｗは２価の有機基を表し、Ｒ3は総炭素数１１〜２０の置換基を有してもよいアルキル基、総炭素数１１〜３０の置換基を有してもよいアリール基、総炭素数１２〜３０の置換基を有してもよいアラルキル基を表す。(A) a resin having a structural unit containing a group represented by the following general formula (X), which is decomposed by the action of an acid to increase the solubility in an alkali developer, and (b) an acid upon irradiation with active radiation A resist composition for positive electron beam, X-ray, or EUV, comprising a compound that generates benzene.
Figure 2003177537
 In formula (X), R 1 and R 2 may be the same or different and each represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, W represents a divalent organic group, and R 3 represents total carbon. An alkyl group that may have a substituent of 11 to 20, an aryl group that may have a substituent of 11 to 30 carbon atoms, and an aralkyl that may have a substituent of 12 to 30 carbon atoms Represents a group. 請求項１に記載のレジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。A pattern forming method comprising: forming a resist film from the resist composition according to claim 1; and exposing and developing the resist film.
JP2002060583A 2001-10-01 2002-03-06 Resist composition for positive electron beam, X-ray or EUV Expired - Lifetime JP4004820B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002060583A JP4004820B2 (en) 2001-10-01 2002-03-06 Resist composition for positive electron beam, X-ray or EUV

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-305364 2001-10-01
JP2001305364 2001-10-01
JP2002060583A JP4004820B2 (en) 2001-10-01 2002-03-06 Resist composition for positive electron beam, X-ray or EUV

Publications (3)

Publication Number Publication Date
JP2003177537A JP2003177537A (en) 2003-06-27
JP2003177537A5 true JP2003177537A5 (en) 2005-04-07
JP4004820B2 JP4004820B2 (en) 2007-11-07

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ID=26623540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002060583A Expired - Lifetime JP4004820B2 (en) 2001-10-01 2002-03-06 Resist composition for positive electron beam, X-ray or EUV

Country Status (1)

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JP (1) JP4004820B2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4429620B2 (en) * 2002-10-15 2010-03-10 出光興産株式会社 Radiation sensitive organic compounds
US20060240355A1 (en) * 2003-09-25 2006-10-26 Tomoyuki Ando Positive resist composition and resist laminate for low-acceleration electron beam and mehod of pattern formation
JP4418659B2 (en) * 2003-09-26 2010-02-17 富士フイルム株式会社 Resist composition for positive electron beam, X-ray or EUV light and pattern forming method using the same
JP4347110B2 (en) 2003-10-22 2009-10-21 東京応化工業株式会社 Positive resist composition for electron beam or EUV
JP4347205B2 (en) * 2004-01-23 2009-10-21 東京応化工業株式会社 Positive resist composition and resist pattern forming method
US7250246B2 (en) 2004-01-26 2007-07-31 Fujifilm Corporation Positive resist composition and pattern formation method using the same
JP2006078760A (en) 2004-09-09 2006-03-23 Tokyo Ohka Kogyo Co Ltd Resist composition for electron beam or euv (extreme ultraviolet radiation) and resist pattern forming method
JP5844613B2 (en) * 2010-11-17 2016-01-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Photosensitive copolymer and photoresist composition
JP5531034B2 (en) * 2012-01-31 2014-06-25 富士フイルム株式会社 Photosensitive resin composition, method for forming cured film, cured film, organic EL display device and liquid crystal display device
JP6894364B2 (en) * 2017-12-26 2021-06-30 信越化学工業株式会社 Organic film forming composition, semiconductor device manufacturing substrate, organic film forming method, and pattern forming method

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