JP2002303978A5 - - Google Patents

Description

式（Ｉａ）及び（Ｉｂ）中、Ｒ₁は独立に水素原子又はアルキル基を表し、Ａは連結基を表す。
式（Ｉａ）中、Ｒ₁₁は炭素数１〜４のアルキル基を表し、Ｚは炭素原子とともに脂環式炭化水素基を形成するのに必要な原子団を表す。
式（Ｉｂ）中、Ｒ₁₂〜Ｒ₁₄は、各々独立に炭化水素基を表し、但し、Ｒ₁₂〜Ｒ₁₄のうち少なくとも１つは脂環式炭化水素基を表す。
【請求項２】 更に、（Ｃ）フッ素系及び／又はシリコン系界面活性剤を含有することを特徴とする請求項１に記載のポジ型レジスト組成物。
【請求項３】 更に、（Ｄ）有機塩基性化合物を含有することを特徴とする請求項１又は請求項２に記載のポジ型レジスト組成物。
【請求項４】 請求項１〜３のいずれかに記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。

[Claims]
(A) A resin having an aliphatic cyclic hydrocarbon group in a side chain and having a dissolution rate in an alkali developing solution increased by the action of an acid, a repeating unit represented by the following general formula (Ia): A positive resist composition comprising: a resin containing the compound; a resin containing a repeating unit represented by formula (Ib); and (B) a compound that generates an acid upon irradiation with actinic rays or radiation.
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In the formulas (Ia) and (Ib), R ₁ independently represents a hydrogen atom or an alkyl group, and A represents a linking group.
In the formula (Ia), R ₁₁ represents an alkyl group having 1 to 4 carbon atoms, and Z represents an atomic group necessary for forming an alicyclic hydrocarbon group together with the carbon atoms.
In the formula (Ib), R _{12 to} R ₁₄ each independently represent a hydrocarbon group, provided that at least one of R _{12 to} R ₁₄ represents an alicyclic hydrocarbon group.
2. The positive resist composition according to claim 1, further comprising (C) a fluorine-based and / or silicon-based surfactant.
3. The positive resist composition according to claim 1, further comprising (D) an organic basic compound.
4. A pattern forming method, comprising: forming a resist film from the positive resist composition according to claim 1, exposing and developing the resist film.