JP2002303978A5 - - Google Patents
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- JP2002303978A5 JP2002303978A5 JP2001107305A JP2001107305A JP2002303978A5 JP 2002303978 A5 JP2002303978 A5 JP 2002303978A5 JP 2001107305 A JP2001107305 A JP 2001107305A JP 2001107305 A JP2001107305 A JP 2001107305A JP 2002303978 A5 JP2002303978 A5 JP 2002303978A5
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- Prior art keywords
- resist composition
- hydrocarbon group
- formula
- positive resist
- composition according
- Prior art date
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Description
【特許請求の範囲】
【請求項1】 (A)脂肪族環状炭化水素基を側鎖に有し、酸の作用によりアルカリ現像液に対する溶解速度が増加する樹脂として、下記一般式(Ia)で表される繰り返し単位を含有する樹脂と一般式(Ib)で表される繰り返し単位を含有する樹脂、及び(B)活性光線又は放射線の照射により酸を発生する化合物を含有することを特徴とするポジ型レジスト組成物。
【化1】
式(Ia)及び(Ib)中、R1は独立に水素原子又はアルキル基を表し、Aは連結基を表す。
式(Ia)中、R11は炭素数1〜4のアルキル基を表し、Zは炭素原子とともに脂環式炭化水素基を形成するのに必要な原子団を表す。
式(Ib)中、R12〜R14は、各々独立に炭化水素基を表し、但し、R12〜R14のうち少なくとも1つは脂環式炭化水素基を表す。
【請求項2】 更に、(C)フッ素系及び/又はシリコン系界面活性剤を含有することを特徴とする請求項1に記載のポジ型レジスト組成物。
【請求項3】 更に、(D)有機塩基性化合物を含有することを特徴とする請求項1又は請求項2に記載のポジ型レジスト組成物。
【請求項4】 請求項1〜3のいずれかに記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。
[Claims]
(A) A resin having an aliphatic cyclic hydrocarbon group in a side chain and having a dissolution rate in an alkali developing solution increased by the action of an acid, a repeating unit represented by the following general formula (Ia): A positive resist composition comprising: a resin containing the compound; a resin containing a repeating unit represented by formula (Ib); and (B) a compound that generates an acid upon irradiation with actinic rays or radiation.
Embedded image
In the formulas (Ia) and (Ib), R 1 independently represents a hydrogen atom or an alkyl group, and A represents a linking group.
In the formula (Ia), R 11 represents an alkyl group having 1 to 4 carbon atoms, and Z represents an atomic group necessary for forming an alicyclic hydrocarbon group together with the carbon atoms.
In the formula (Ib), R 12 to R 14 each independently represent a hydrocarbon group, provided that at least one of R 12 to R 14 represents an alicyclic hydrocarbon group.
2. The positive resist composition according to claim 1, further comprising (C) a fluorine-based and / or silicon-based surfactant.
3. The positive resist composition according to claim 1, further comprising (D) an organic basic compound.
4. A pattern forming method, comprising: forming a resist film from the positive resist composition according to claim 1, exposing and developing the resist film.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001107305A JP4124978B2 (en) | 2001-04-05 | 2001-04-05 | Positive resist composition |
KR1020020017975A KR100907268B1 (en) | 2001-04-05 | 2002-04-02 | Positive resist composition and pattern forming method using the same |
TW091106744A TW583511B (en) | 2001-04-05 | 2002-04-03 | Positive resist composition |
US10/114,985 US7179578B2 (en) | 2001-04-05 | 2002-04-04 | Positive resist composition |
KR1020080101728A KR100920164B1 (en) | 2001-04-05 | 2008-10-16 | Positive resist composition and pattern forming method using the same |
KR1020090069621A KR100950508B1 (en) | 2001-04-05 | 2009-07-29 | Positive resist composition and pattern forming method using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001107305A JP4124978B2 (en) | 2001-04-05 | 2001-04-05 | Positive resist composition |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002303978A JP2002303978A (en) | 2002-10-18 |
JP2002303978A5 true JP2002303978A5 (en) | 2006-01-19 |
JP4124978B2 JP4124978B2 (en) | 2008-07-23 |
Family
ID=18959642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001107305A Expired - Lifetime JP4124978B2 (en) | 2001-04-05 | 2001-04-05 | Positive resist composition |
Country Status (1)
Country | Link |
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JP (1) | JP4124978B2 (en) |
Families Citing this family (16)
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AU2003280710A1 (en) | 2002-11-05 | 2004-06-07 | Jsr Corporation | Acrylic copolymer and radiation-sensitive resin composition |
JP4225817B2 (en) | 2003-03-31 | 2009-02-18 | 富士フイルム株式会社 | Positive resist composition |
JP4360836B2 (en) | 2003-06-04 | 2009-11-11 | 富士フイルム株式会社 | Positive resist composition |
JP4300420B2 (en) | 2004-06-21 | 2009-07-22 | 信越化学工業株式会社 | Polymer compound, resist material, and pattern forming method |
JP4274057B2 (en) * | 2004-06-21 | 2009-06-03 | 信越化学工業株式会社 | Polymer compound, resist material, and pattern forming method |
JP4485913B2 (en) * | 2004-11-05 | 2010-06-23 | 東京応化工業株式会社 | Method for producing resist composition and resist composition |
JP4881686B2 (en) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | Positive resist composition and pattern forming method using the same |
JP4881687B2 (en) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | Positive resist composition and pattern forming method using the same |
JP5019055B2 (en) * | 2006-01-25 | 2012-09-05 | 日産化学工業株式会社 | Positive photosensitive resin composition and cured film obtained therefrom |
JP4832237B2 (en) * | 2006-09-27 | 2011-12-07 | 富士フイルム株式会社 | Positive resist composition and pattern forming method using the same |
JP4621754B2 (en) | 2007-03-28 | 2011-01-26 | 富士フイルム株式会社 | Positive resist composition and pattern forming method |
EP1975716B1 (en) | 2007-03-28 | 2013-05-15 | Fujifilm Corporation | Positive resist composition and pattern forming method |
EP1975714A1 (en) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method |
JP5434906B2 (en) * | 2008-03-04 | 2014-03-05 | Jsr株式会社 | Radiation sensitive composition, polymer and monomer |
JP2011075750A (en) * | 2009-09-30 | 2011-04-14 | Jsr Corp | Radiation sensitive resin composition for chemically amplified resist and polymer |
JP2013088763A (en) * | 2011-10-21 | 2013-05-13 | Jsr Corp | Photoresist composition |
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2001
- 2001-04-05 JP JP2001107305A patent/JP4124978B2/en not_active Expired - Lifetime