JP2002372784A5 - - Google Patents

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JP2002372784A5
JP2002372784A5 JP2002101333A JP2002101333A JP2002372784A5 JP 2002372784 A5 JP2002372784 A5 JP 2002372784A5 JP 2002101333 A JP2002101333 A JP 2002101333A JP 2002101333 A JP2002101333 A JP 2002101333A JP 2002372784 A5 JP2002372784 A5 JP 2002372784A5
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Prior art keywords
resist composition
hydrocarbon group
formula
positive resist
composition according
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JP2002101333A
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Japanese (ja)
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JP4090773B2 (en
JP2002372784A (en
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Priority claimed from JP2002101333A external-priority patent/JP4090773B2/en
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Publication of JP2002372784A5 publication Critical patent/JP2002372784A5/ja
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Claims (4)

(A)脂肪族環状炭化水素基を側鎖に有し、酸の作用によりアルカリ現像液に対する溶解速度が増加する樹脂として、下記一般式(Ia)で表される繰り返し単位と一般式(Ib)で表される繰り返し単位を含有する樹脂、及び(B)活性光線又は放射線の照射により酸を発生する化合物を含有することを特徴とするポジ型レジスト組成物。
Figure 2002372784
式(Ia)及び(Ib)中、R1は独立に水素原子又はアルキル基を表し、Aは連結基を表す。
式(Ia)中、R11は炭素数1〜4のアルキル基を表し、Zは炭素原子とともに脂環式炭化水素基を形成するのに必要な原子団を表す。
式(Ib)中、R12〜R14は、各々独立に炭化水素基を表し、但し、R12〜R14のうち少なくとも1つは脂環式炭化水素基を表す。
(A) As a resin having an aliphatic cyclic hydrocarbon group in the side chain and increasing the dissolution rate in an alkaline developer by the action of an acid, a repeating unit represented by the following general formula (Ia) and the general formula (Ib) A positive resist composition comprising: a resin containing a repeating unit represented by formula (B); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation.
Figure 2002372784
In formulas (Ia) and (Ib), R 1 independently represents a hydrogen atom or an alkyl group, and A represents a linking group.
In the formula (Ia), R 11 represents an alkyl group having 1 to 4 carbon atoms, and Z represents an atomic group necessary for forming an alicyclic hydrocarbon group together with a carbon atom.
In formula (Ib), R 12 to R 14 each independently represents a hydrocarbon group, provided that at least one of R 12 to R 14 represents an alicyclic hydrocarbon group.
更に、(C)フッ素系及び/又はシリコン系界面活性剤を含有することを特徴とする請求項1に記載のポジ型レジスト組成物。  The positive resist composition according to claim 1, further comprising (C) a fluorine-based and / or silicon-based surfactant. 更に、(D)有機塩基性化合物を含有することを特徴とする請求項1又は請求項2に記載のポジ型レジスト組成物。  The positive resist composition according to claim 1, further comprising (D) an organic basic compound. 請求項1〜3のいずれかに記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。  A pattern forming method comprising: forming a resist film from the positive resist composition according to claim 1; and exposing and developing the resist film.
JP2002101333A 2001-04-05 2002-04-03 Positive resist composition Expired - Fee Related JP4090773B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002101333A JP4090773B2 (en) 2001-04-05 2002-04-03 Positive resist composition

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001107304 2001-04-05
JP2001-107304 2001-04-05
JP2002101333A JP4090773B2 (en) 2001-04-05 2002-04-03 Positive resist composition

Publications (3)

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JP2002372784A JP2002372784A (en) 2002-12-26
JP2002372784A5 true JP2002372784A5 (en) 2005-09-15
JP4090773B2 JP4090773B2 (en) 2008-05-28

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JP2002101333A Expired - Fee Related JP4090773B2 (en) 2001-04-05 2002-04-03 Positive resist composition

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002338627A (en) * 2001-05-22 2002-11-27 Daicel Chem Ind Ltd Polymer compound for photoresist and photosensitive resin composition
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
ATE481430T1 (en) 2002-11-05 2010-10-15 Jsr Corp ACRYLIC COPOLYMER AND RADIATION SENSITIVE RESIN COMPOSITION
JP5162290B2 (en) 2007-03-23 2013-03-13 富士フイルム株式会社 Resist composition and pattern forming method using the same
JP5997873B2 (en) 2008-06-30 2016-09-28 富士フイルム株式会社 Photosensitive composition and pattern forming method using the same
KR20130114095A (en) 2010-09-17 2013-10-16 제이에스알 가부시끼가이샤 Radiation-sensitive resin composition, polymer, and method for forming resist pattern
JP5723648B2 (en) * 2011-03-25 2015-05-27 東京応化工業株式会社 Resist composition and resist pattern forming method

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