JP2004029136A5 - - Google Patents

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JP2004029136A5
JP2004029136A5 JP2002181588A JP2002181588A JP2004029136A5 JP 2004029136 A5 JP2004029136 A5 JP 2004029136A5 JP 2002181588 A JP2002181588 A JP 2002181588A JP 2002181588 A JP2002181588 A JP 2002181588A JP 2004029136 A5 JP2004029136 A5 JP 2004029136A5
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group
fluorine atom
alkyl group
atom
hydrogen atom
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JP2002181588A
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JP4116340B2 (en
JP2004029136A (en
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Priority claimed from JP2002181588A external-priority patent/JP4116340B2/en
Priority to JP2002181588A priority Critical patent/JP4116340B2/en
Priority to EP04019923A priority patent/EP1480079A3/en
Priority to US10/455,459 priority patent/US7214467B2/en
Priority to EP03012226A priority patent/EP1376232A1/en
Priority to TW092115358A priority patent/TWI284779B/en
Priority to KR1020030036576A priority patent/KR100945003B1/en
Publication of JP2004029136A publication Critical patent/JP2004029136A/en
Publication of JP2004029136A5 publication Critical patent/JP2004029136A5/ja
Publication of JP4116340B2 publication Critical patent/JP4116340B2/en
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Claims (4)

(A)一般式(Y)で表される基を有する繰り返し単位を含有する、酸の作用により分解しアルカリ現像液に対する溶解度が増大する樹脂;
及び
(B)活性光線または放射線の照射により酸を発生する化合物として、下記(B1)から(B4)より成る群より選ばれる少なくとも2種の化合物
(B1)活性光線または放射線の照射により少なくとも1つのフッ素原子で置換された脂肪族あるいは芳香族のスルホン酸を発生する化合物、
(B2)活性光線または放射線の照射によりフッ素原子を含有しない脂肪族あるいは芳香族のスルホン酸を発生する化合物、
(B3)活性光線または放射線の照射により少なくとも1つのフッ素原子で置換された脂肪族あるいは芳香族のカルボン酸を発生する化合物、
(B4)活性光線または放射線の照射によりフッ素原子を含有しない脂肪族あるいは芳香族のカルボン酸を発生する化合物
を含有することを特徴とする感光性樹脂組成物。
Figure 2004029136
式(Y)中、R50〜R55は、同じでも異なっていてもよく、水素原子、フッ素原子又は置換基を有していてもよいアルキル基を表す。但し、R50〜R55の内、少なくとも1つは、フッ素原子又は少なくとも1つの水素原子がフッ素原子で置換されたアルキル基を表す。
60〜R62は、同じでも異なっていてもよく、置換基を有していてもよいアルキル基、シクロアルキル基、アルケニル基、アラルキル基又はアリール基を表す。
(A) A resin containing a repeating unit having a group represented by the general formula (Y), which decomposes by the action of an acid and increases the solubility in an alkali developer;
And (B) at least one compound (B1) selected from the group consisting of (B1) to (B4) below as an acid-generating compound upon irradiation with actinic rays or radiation: A compound that generates an aliphatic or aromatic sulfonic acid substituted with a fluorine atom,
(B2) a compound that generates an aliphatic or aromatic sulfonic acid that does not contain a fluorine atom upon irradiation with actinic rays or radiation,
(B3) a compound that generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom by irradiation with actinic rays or radiation,
(B4) A photosensitive resin composition comprising a compound that generates an aliphatic or aromatic carboxylic acid that does not contain a fluorine atom when irradiated with actinic rays or radiation.
Figure 2004029136
In the formula (Y), R 50 to R 55 may be the same or different and each represents a hydrogen atom, a fluorine atom, or an alkyl group which may have a substituent. However, at least one of R 50 to R 55 represents a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom.
R 60 to R 62 may be the same or different and each represents an optionally substituted alkyl group, cycloalkyl group, alkenyl group, aralkyl group or aryl group.
一般式(Y)で表される基を有する繰り返し単位が下記一般式(1)又は(2)で表されることを特徴とする請求項1に記載の感光性樹脂組成物。
Figure 2004029136
1は脂環式炭化水素基を表す。L1及びL2は連結基、Yは一般式(Y)で表される基を表す。Rx1及びRy1は、各々独立に、水素原子、ハロゲン原子、シアノ基又は置換基を有していてもよいアルキル基を表す。
The photosensitive resin composition according to claim 1, wherein the repeating unit having a group represented by the general formula (Y) is represented by the following general formula (1) or (2).
Figure 2004029136
Q 1 represents an alicyclic hydrocarbon group. L 1 and L 2 represent a linking group, and Y represents a group represented by the general formula (Y). R x1 and R y1 each independently represent a hydrogen atom, a halogen atom, a cyano group or an alkyl group which may have a substituent.
(A)成分が下記一般式(II)及び(II’)で示される繰り返し単位を各々少なくとも一つ有する樹脂であることを特徴とする請求項1に記載の感光性樹脂組成物。
Figure 2004029136
一般式(II)及び(II’)中、
5は、同じでも異なっていてもよく、水素原子、ハロゲン原子、シアノ基又は置換基を有していてもよいアルキル基を表す。
6及びR7は、同じでも異なっていてもよく、水素原子、ハロゲン原子、シアノ基、ヒドロキシル基、又は置換基を有していてもよい、アルキル基、シクロアルキル基、アルコキシ基、アシル基、アシロキシ基、アルケニル基、アリール基又はアラルキル基を表す。
50〜R55は、同じでも異なっていてもよく、水素原子、フッ素原子又は置換基を有していてもよいアルキル基を表す。但し、R50〜R55の内、少なくとも1つは、フッ素原子又は少なくとも1つの水素原子がフッ素原子で置換されたアルキル基を表す。
60〜R62は、同じでも異なっていてもよく、置換基を有していてもよいアルキル基、シクロアルキル基、アルケニル基、アラルキル基又はアリール基を表す。
The photosensitive resin composition according to claim 1, wherein the component (A) is a resin having at least one repeating unit represented by the following general formulas (II) and (II ′).
Figure 2004029136
In general formulas (II) and (II ′),
R 5 may be the same or different and each represents a hydrogen atom, a halogen atom, a cyano group or an alkyl group which may have a substituent.
R 6 and R 7 may be the same or different, and may be a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, or an optionally substituted alkyl group, cycloalkyl group, alkoxy group, acyl group. Represents an acyloxy group, an alkenyl group, an aryl group or an aralkyl group.
R 50 to R 55 may be the same or different and each represents a hydrogen atom, a fluorine atom, or an alkyl group that may have a substituent. However, at least one of R 50 to R 55 represents a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom.
R 60 to R 62 may be the same or different and each represents an optionally substituted alkyl group, cycloalkyl group, alkenyl group, aralkyl group or aryl group.
請求項1〜3のいずれかに記載の感光性樹脂組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。  A pattern forming method, comprising: forming a resist film from the photosensitive resin composition according to claim 1; and exposing and developing the resist film.
JP2002181588A 2002-06-07 2002-06-21 Photosensitive resin composition Expired - Fee Related JP4116340B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002181588A JP4116340B2 (en) 2002-06-21 2002-06-21 Photosensitive resin composition
TW092115358A TWI284779B (en) 2002-06-07 2003-06-06 Photosensitive resin composition
US10/455,459 US7214467B2 (en) 2002-06-07 2003-06-06 Photosensitive resin composition
EP03012226A EP1376232A1 (en) 2002-06-07 2003-06-06 Photosensitive resin composition
EP04019923A EP1480079A3 (en) 2002-06-07 2003-06-06 Photosensitive resin composition
KR1020030036576A KR100945003B1 (en) 2002-06-07 2003-06-07 Photosensitive resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002181588A JP4116340B2 (en) 2002-06-21 2002-06-21 Photosensitive resin composition

Publications (3)

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JP2004029136A JP2004029136A (en) 2004-01-29
JP2004029136A5 true JP2004029136A5 (en) 2005-09-29
JP4116340B2 JP4116340B2 (en) 2008-07-09

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JP2002181588A Expired - Fee Related JP4116340B2 (en) 2002-06-07 2002-06-21 Photosensitive resin composition

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* Cited by examiner, † Cited by third party
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WO2009011364A1 (en) * 2007-07-18 2009-01-22 Asahi Glass Company, Limited Resist composition used for lithography process using electron beam, x ray or euv light.
JP5678864B2 (en) 2011-10-26 2015-03-04 信越化学工業株式会社 Chemically amplified positive resist material for ArF immersion exposure and pattern forming method
JP5846889B2 (en) * 2011-12-14 2016-01-20 東京応化工業株式会社 Resist composition, resist pattern forming method, compound
JP5699943B2 (en) 2012-01-13 2015-04-15 信越化学工業株式会社 Pattern forming method and resist material
JP6010564B2 (en) 2014-01-10 2016-10-19 信越化学工業株式会社 Chemically amplified negative resist composition and pattern forming method
JP6046646B2 (en) 2014-01-10 2016-12-21 信越化学工業株式会社 Onium salt, chemically amplified positive resist composition, and pattern forming method
JP6142847B2 (en) 2014-06-09 2017-06-07 信越化学工業株式会社 Chemically amplified resist composition and pattern forming method
JP6531684B2 (en) 2015-04-13 2019-06-19 信越化学工業株式会社 Chemically amplified negative resist composition using the novel onium salt compound and method for forming resist pattern
JP6663677B2 (en) * 2015-10-06 2020-03-13 東京応化工業株式会社 Resist composition and method for forming resist pattern, compound and acid diffusion controlling agent
JP6561937B2 (en) 2016-08-05 2019-08-21 信越化学工業株式会社 Negative resist composition and resist pattern forming method
JP7009980B2 (en) 2016-12-28 2022-01-26 信越化学工業株式会社 Chemically amplified negative resist composition and resist pattern forming method
JP6922849B2 (en) 2018-05-25 2021-08-18 信越化学工業株式会社 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming method
JP7365110B2 (en) 2018-09-11 2023-10-19 信越化学工業株式会社 Iodonium salt, resist composition, and pattern forming method
JP7099250B2 (en) 2018-10-25 2022-07-12 信越化学工業株式会社 Onium salt, negative resist composition and resist pattern forming method
JP7415972B2 (en) 2021-02-12 2024-01-17 信越化学工業株式会社 Chemically amplified negative resist composition and resist pattern forming method
JP2023177048A (en) 2022-06-01 2023-12-13 信越化学工業株式会社 Chemically amplified negative resist composition and resist pattern forming method
JP2023177272A (en) 2022-06-01 2023-12-13 信越化学工業株式会社 Chemically amplified negative resist composition and method for forming resist pattern

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