JP2004029136A5 - - Google Patents
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- JP2004029136A5 JP2004029136A5 JP2002181588A JP2002181588A JP2004029136A5 JP 2004029136 A5 JP2004029136 A5 JP 2004029136A5 JP 2002181588 A JP2002181588 A JP 2002181588A JP 2002181588 A JP2002181588 A JP 2002181588A JP 2004029136 A5 JP2004029136 A5 JP 2004029136A5
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- fluorine atom
- alkyl group
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Claims (4)
及び
(B)活性光線または放射線の照射により酸を発生する化合物として、下記(B1)から(B4)より成る群より選ばれる少なくとも2種の化合物
(B1)活性光線または放射線の照射により少なくとも1つのフッ素原子で置換された脂肪族あるいは芳香族のスルホン酸を発生する化合物、
(B2)活性光線または放射線の照射によりフッ素原子を含有しない脂肪族あるいは芳香族のスルホン酸を発生する化合物、
(B3)活性光線または放射線の照射により少なくとも1つのフッ素原子で置換された脂肪族あるいは芳香族のカルボン酸を発生する化合物、
(B4)活性光線または放射線の照射によりフッ素原子を含有しない脂肪族あるいは芳香族のカルボン酸を発生する化合物
を含有することを特徴とする感光性樹脂組成物。
R60〜R62は、同じでも異なっていてもよく、置換基を有していてもよいアルキル基、シクロアルキル基、アルケニル基、アラルキル基又はアリール基を表す。(A) A resin containing a repeating unit having a group represented by the general formula (Y), which decomposes by the action of an acid and increases the solubility in an alkali developer;
And (B) at least one compound (B1) selected from the group consisting of (B1) to (B4) below as an acid-generating compound upon irradiation with actinic rays or radiation: A compound that generates an aliphatic or aromatic sulfonic acid substituted with a fluorine atom,
(B2) a compound that generates an aliphatic or aromatic sulfonic acid that does not contain a fluorine atom upon irradiation with actinic rays or radiation,
(B3) a compound that generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom by irradiation with actinic rays or radiation,
(B4) A photosensitive resin composition comprising a compound that generates an aliphatic or aromatic carboxylic acid that does not contain a fluorine atom when irradiated with actinic rays or radiation.
R 60 to R 62 may be the same or different and each represents an optionally substituted alkyl group, cycloalkyl group, alkenyl group, aralkyl group or aryl group.
R5は、同じでも異なっていてもよく、水素原子、ハロゲン原子、シアノ基又は置換基を有していてもよいアルキル基を表す。
R6及びR7は、同じでも異なっていてもよく、水素原子、ハロゲン原子、シアノ基、ヒドロキシル基、又は置換基を有していてもよい、アルキル基、シクロアルキル基、アルコキシ基、アシル基、アシロキシ基、アルケニル基、アリール基又はアラルキル基を表す。
R50〜R55は、同じでも異なっていてもよく、水素原子、フッ素原子又は置換基を有していてもよいアルキル基を表す。但し、R50〜R55の内、少なくとも1つは、フッ素原子又は少なくとも1つの水素原子がフッ素原子で置換されたアルキル基を表す。
R60〜R62は、同じでも異なっていてもよく、置換基を有していてもよいアルキル基、シクロアルキル基、アルケニル基、アラルキル基又はアリール基を表す。The photosensitive resin composition according to claim 1, wherein the component (A) is a resin having at least one repeating unit represented by the following general formulas (II) and (II ′).
R 5 may be the same or different and each represents a hydrogen atom, a halogen atom, a cyano group or an alkyl group which may have a substituent.
R 6 and R 7 may be the same or different, and may be a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, or an optionally substituted alkyl group, cycloalkyl group, alkoxy group, acyl group. Represents an acyloxy group, an alkenyl group, an aryl group or an aralkyl group.
R 50 to R 55 may be the same or different and each represents a hydrogen atom, a fluorine atom, or an alkyl group that may have a substituent. However, at least one of R 50 to R 55 represents a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom.
R 60 to R 62 may be the same or different and each represents an optionally substituted alkyl group, cycloalkyl group, alkenyl group, aralkyl group or aryl group.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002181588A JP4116340B2 (en) | 2002-06-21 | 2002-06-21 | Photosensitive resin composition |
TW092115358A TWI284779B (en) | 2002-06-07 | 2003-06-06 | Photosensitive resin composition |
US10/455,459 US7214467B2 (en) | 2002-06-07 | 2003-06-06 | Photosensitive resin composition |
EP03012226A EP1376232A1 (en) | 2002-06-07 | 2003-06-06 | Photosensitive resin composition |
EP04019923A EP1480079A3 (en) | 2002-06-07 | 2003-06-06 | Photosensitive resin composition |
KR1020030036576A KR100945003B1 (en) | 2002-06-07 | 2003-06-07 | Photosensitive resin composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002181588A JP4116340B2 (en) | 2002-06-21 | 2002-06-21 | Photosensitive resin composition |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004029136A JP2004029136A (en) | 2004-01-29 |
JP2004029136A5 true JP2004029136A5 (en) | 2005-09-29 |
JP4116340B2 JP4116340B2 (en) | 2008-07-09 |
Family
ID=31178384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002181588A Expired - Fee Related JP4116340B2 (en) | 2002-06-07 | 2002-06-21 | Photosensitive resin composition |
Country Status (1)
Country | Link |
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JP (1) | JP4116340B2 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009011364A1 (en) * | 2007-07-18 | 2009-01-22 | Asahi Glass Company, Limited | Resist composition used for lithography process using electron beam, x ray or euv light. |
JP5678864B2 (en) | 2011-10-26 | 2015-03-04 | 信越化学工業株式会社 | Chemically amplified positive resist material for ArF immersion exposure and pattern forming method |
JP5846889B2 (en) * | 2011-12-14 | 2016-01-20 | 東京応化工業株式会社 | Resist composition, resist pattern forming method, compound |
JP5699943B2 (en) | 2012-01-13 | 2015-04-15 | 信越化学工業株式会社 | Pattern forming method and resist material |
JP6010564B2 (en) | 2014-01-10 | 2016-10-19 | 信越化学工業株式会社 | Chemically amplified negative resist composition and pattern forming method |
JP6046646B2 (en) | 2014-01-10 | 2016-12-21 | 信越化学工業株式会社 | Onium salt, chemically amplified positive resist composition, and pattern forming method |
JP6142847B2 (en) | 2014-06-09 | 2017-06-07 | 信越化学工業株式会社 | Chemically amplified resist composition and pattern forming method |
JP6531684B2 (en) | 2015-04-13 | 2019-06-19 | 信越化学工業株式会社 | Chemically amplified negative resist composition using the novel onium salt compound and method for forming resist pattern |
JP6663677B2 (en) * | 2015-10-06 | 2020-03-13 | 東京応化工業株式会社 | Resist composition and method for forming resist pattern, compound and acid diffusion controlling agent |
JP6561937B2 (en) | 2016-08-05 | 2019-08-21 | 信越化学工業株式会社 | Negative resist composition and resist pattern forming method |
JP7009980B2 (en) | 2016-12-28 | 2022-01-26 | 信越化学工業株式会社 | Chemically amplified negative resist composition and resist pattern forming method |
JP6922849B2 (en) | 2018-05-25 | 2021-08-18 | 信越化学工業株式会社 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming method |
JP7365110B2 (en) | 2018-09-11 | 2023-10-19 | 信越化学工業株式会社 | Iodonium salt, resist composition, and pattern forming method |
JP7099250B2 (en) | 2018-10-25 | 2022-07-12 | 信越化学工業株式会社 | Onium salt, negative resist composition and resist pattern forming method |
JP7415972B2 (en) | 2021-02-12 | 2024-01-17 | 信越化学工業株式会社 | Chemically amplified negative resist composition and resist pattern forming method |
JP2023177048A (en) | 2022-06-01 | 2023-12-13 | 信越化学工業株式会社 | Chemically amplified negative resist composition and resist pattern forming method |
JP2023177272A (en) | 2022-06-01 | 2023-12-13 | 信越化学工業株式会社 | Chemically amplified negative resist composition and method for forming resist pattern |
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2002
- 2002-06-21 JP JP2002181588A patent/JP4116340B2/en not_active Expired - Fee Related