JP2000231194A5 - - Google Patents

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Publication number
JP2000231194A5
JP2000231194A5 JP1999240600A JP24060099A JP2000231194A5 JP 2000231194 A5 JP2000231194 A5 JP 2000231194A5 JP 1999240600 A JP1999240600 A JP 1999240600A JP 24060099 A JP24060099 A JP 24060099A JP 2000231194 A5 JP2000231194 A5 JP 2000231194A5
Authority
JP
Japan
Prior art keywords
resist film
photoresist composition
positive photoresist
alkyl group
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999240600A
Other languages
Japanese (ja)
Other versions
JP3995369B2 (en
JP2000231194A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP24060099A priority Critical patent/JP3995369B2/en
Priority claimed from JP24060099A external-priority patent/JP3995369B2/en
Priority to US09/456,827 priority patent/US6576392B1/en
Priority to KR1019990055067A priority patent/KR100610165B1/en
Publication of JP2000231194A publication Critical patent/JP2000231194A/en
Publication of JP2000231194A5 publication Critical patent/JP2000231194A5/ja
Application granted granted Critical
Publication of JP3995369B2 publication Critical patent/JP3995369B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (2)

活性光線または放射線の照射により酸を発生する化合物、及び
一般式(I) −SO2−O−R
(ここでRは、置換基を有していてもよい、アルキル基、環状アルキル基又はアルケニル基を表す。)で表される基を含む繰り返し単位を含有し、酸の作用によりアルカリ現像液に対する溶解速度が増加する樹脂を含有することを特徴とするポジ型フォトレジスト組成物。
A compound capable of generating an acid upon irradiation with actinic rays or radiation, and a compound represented by the general formula (I) —SO 2 —OR
(Wherein R represents an alkyl group, a cyclic alkyl group or an alkenyl group which may have a substituent), and contains a repeating unit containing a group represented by A positive photoresist composition comprising a resin having an increased dissolution rate.
請求項1に記載のポジ型フォトレジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。A pattern forming method comprising: forming a resist film from the positive photoresist composition according to claim 1; and exposing and developing the resist film.
JP24060099A 1996-12-07 1999-08-26 Positive photoresist composition Expired - Fee Related JP3995369B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP24060099A JP3995369B2 (en) 1998-12-07 1999-08-26 Positive photoresist composition
US09/456,827 US6576392B1 (en) 1996-12-07 1999-12-06 Positive photoresist composition
KR1019990055067A KR100610165B1 (en) 1998-12-07 1999-12-06 Positive photoresist composition

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34719398 1998-12-07
JP10-347193 1998-12-07
JP24060099A JP3995369B2 (en) 1998-12-07 1999-08-26 Positive photoresist composition

Publications (3)

Publication Number Publication Date
JP2000231194A JP2000231194A (en) 2000-08-22
JP2000231194A5 true JP2000231194A5 (en) 2005-07-07
JP3995369B2 JP3995369B2 (en) 2007-10-24

Family

ID=26534811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24060099A Expired - Fee Related JP3995369B2 (en) 1996-12-07 1999-08-26 Positive photoresist composition

Country Status (1)

Country Link
JP (1) JP3995369B2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482567B1 (en) * 2000-08-25 2002-11-19 Shipley Company, L.L.C. Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same
JP4438218B2 (en) * 2000-11-16 2010-03-24 Jsr株式会社 Radiation sensitive resin composition
JP4186497B2 (en) * 2001-04-12 2008-11-26 東レ株式会社 Positive radiation-sensitive composition and method for producing resist pattern using the same
JP4007581B2 (en) * 2002-04-19 2007-11-14 富士フイルム株式会社 Positive resist composition
KR100955006B1 (en) * 2002-04-26 2010-04-27 후지필름 가부시키가이샤 Positive resist composition
KR100467698B1 (en) * 2002-09-05 2005-01-24 삼성에스디아이 주식회사 Cylindrical type lithium secondary battery and the fabrication method of the same
JP4996060B2 (en) * 2004-05-12 2012-08-08 キヤノン株式会社 Charge control agent containing polymer having sulfonate group and amide group, toner for developing electrostatic image using the same, image forming method and image forming apparatus
US7795363B2 (en) 2004-05-12 2010-09-14 Canon Kabushiki Kaisha Polymer having a sulfonic group or a sulfonate group and an amide group and method of producing same
US7537879B2 (en) * 2004-11-22 2009-05-26 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
JP5331624B2 (en) * 2009-09-04 2013-10-30 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
KR101706409B1 (en) 2009-09-30 2017-02-13 제이에스알 가부시끼가이샤 Polymer, radiation-sensitive composition, monomer, and manufacturing method therefor
KR20140033027A (en) * 2011-04-01 2014-03-17 더 리서치 파운데이션 오브 스테이트 유니버시티 오브 뉴욕 Stabilized acid amplifiers
US9772558B2 (en) * 2013-09-24 2017-09-26 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists

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