JP2003280202A5 - - Google Patents

Download PDF

Info

Publication number
JP2003280202A5
JP2003280202A5 JP2002084074A JP2002084074A JP2003280202A5 JP 2003280202 A5 JP2003280202 A5 JP 2003280202A5 JP 2002084074 A JP2002084074 A JP 2002084074A JP 2002084074 A JP2002084074 A JP 2002084074A JP 2003280202 A5 JP2003280202 A5 JP 2003280202A5
Authority
JP
Japan
Prior art keywords
acid
action
resist film
resist composition
positive resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002084074A
Other languages
Japanese (ja)
Other versions
JP2003280202A (en
JP3949479B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2002084074A priority Critical patent/JP3949479B2/en
Priority claimed from JP2002084074A external-priority patent/JP3949479B2/en
Publication of JP2003280202A publication Critical patent/JP2003280202A/en
Publication of JP2003280202A5 publication Critical patent/JP2003280202A5/ja
Application granted granted Critical
Publication of JP3949479B2 publication Critical patent/JP3949479B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Claims (2)

（ａ）酸の作用による分解で離脱する基が、少なくとも１つのフッ素原子と環状構造とを含有する、酸の作用により分解してアルカリ水溶液に対する溶解性が向上する樹脂、
（ｂ）活性光線又は放射線の照射により酸を発生する化合物、及び、
（ｃ）溶剤
を含有することを特徴とするポジ型レジスト組成物。(A) a group containing at least one fluorine atom and a cyclic structure, wherein the group leaving by decomposition by the action of an acid is decomposed by the action of an acid to improve the solubility in an aqueous alkali solution;
(B) a compound that generates an acid upon irradiation with actinic rays or radiation, and
(C) A positive resist composition containing a solvent. 請求項１に記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。  A pattern forming method comprising: forming a resist film from the positive resist composition according to claim 1; and exposing and developing the resist film.
JP2002084074A 2002-03-25 2002-03-25 Positive resist composition Expired - Lifetime JP3949479B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002084074A JP3949479B2 (en) 2002-03-25 2002-03-25 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002084074A JP3949479B2 (en) 2002-03-25 2002-03-25 Positive resist composition

Publications (3)

Publication Number Publication Date
JP2003280202A JP2003280202A (en) 2003-10-02
JP2003280202A5 true JP2003280202A5 (en) 2005-04-07
JP3949479B2 JP3949479B2 (en) 2007-07-25

Family

ID=29231588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002084074A Expired - Lifetime JP3949479B2 (en) 2002-03-25 2002-03-25 Positive resist composition

Country Status (1)

Country Link
JP (1) JP3949479B2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4295052B2 (en) * 2003-07-23 2009-07-15 ダイセル化学工業株式会社 Fluorine atom-containing polymerizable unsaturated monomer, fluorine atom-containing polymer compound, and resin composition for photoresist
JP4347110B2 (en) 2003-10-22 2009-10-21 東京応化工業株式会社 Positive resist composition for electron beam or EUV
JP5518394B2 (en) * 2008-08-13 2014-06-11 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP5560115B2 (en) * 2010-06-28 2014-07-23 富士フイルム株式会社 Pattern formation method, chemically amplified resist composition, and resist film
KR101776320B1 (en) * 2010-08-30 2017-09-07 스미또모 가가꾸 가부시키가이샤 Resist composition and method for producing resist pattern
JP5194135B2 (en) * 2011-02-04 2013-05-08 富士フイルム株式会社 Chemically amplified positive resist composition, and resist film, resist coating mask blanks, and resist pattern forming method using the same
JP5829942B2 (en) * 2011-02-25 2015-12-09 住友化学株式会社 Resist composition and method for producing resist pattern
JP5829940B2 (en) * 2011-02-25 2015-12-09 住友化学株式会社 Resist composition and method for producing resist pattern
JP5833948B2 (en) * 2011-02-25 2015-12-16 住友化学株式会社 Resist composition and method for producing resist pattern
JP5829941B2 (en) * 2011-02-25 2015-12-09 住友化学株式会社 Resist composition and method for producing resist pattern
JP5829943B2 (en) * 2011-02-25 2015-12-09 住友化学株式会社 Resist composition and method for producing resist pattern
JP2013079232A (en) * 2011-09-30 2013-05-02 Rohm & Haas Electronic Materials Llc Photoacid generator and photoresist comprising the same
JP6326825B2 (en) * 2013-02-18 2018-05-23 住友化学株式会社 Salt, resist composition and method for producing resist pattern
JP2018072358A (en) * 2015-03-02 2018-05-10 富士フイルム株式会社 Active light sensitive or radiation sensitive resin composition, and active light sensitive or radiation sensitive film
US11782345B2 (en) * 2019-08-05 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom antireflective coating materials
DE102019134535B4 (en) * 2019-08-05 2023-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. MATERIALS FOR LOWER ANTI-REFLECTIVE PLATING

Similar Documents

Publication Publication Date Title
JP2003280202A5 (en)
JP2003167333A5 (en)
JP2001281849A5 (en)
EP2019334A3 (en) Positive resist composition and method of pattern formation with the same
JP2004004557A5 (en)
JP2003241379A5 (en)
JP2004302198A5 (en)
EP1515186A3 (en) Positive resist composition and pattern formation method using the same
JP2001183837A5 (en)
JP2009258506A5 (en)
EP2031445A3 (en) Chemical amplification resist composition and pattern-forming method using the same
JP2004334107A5 (en)
JP2003270791A5 (en)
JP2004287262A5 (en)
JP2000231194A5 (en)
JP2002323768A5 (en)
JP2003262952A5 (en)
JP2003186195A5 (en)
JP2000187327A5 (en)
JP2000187329A5 (en)
JP2003177537A5 (en)
JP2000352822A5 (en)
JP2003173022A5 (en)
JP2003207886A5 (en)
JP2000227659A5 (en)