JP2009258506A5 - - Google Patents

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Publication number
JP2009258506A5
JP2009258506A5 JP2008109335A JP2008109335A JP2009258506A5 JP 2009258506 A5 JP2009258506 A5 JP 2009258506A5 JP 2008109335 A JP2008109335 A JP 2008109335A JP 2008109335 A JP2008109335 A JP 2008109335A JP 2009258506 A5 JP2009258506 A5 JP 2009258506A5
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JP
Japan
Prior art keywords
resin
resist composition
negative resist
acid
composition according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2008109335A
Other languages
Japanese (ja)
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JP2009258506A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2008109335A priority Critical patent/JP2009258506A/en
Priority claimed from JP2008109335A external-priority patent/JP2009258506A/en
Publication of JP2009258506A publication Critical patent/JP2009258506A/en
Publication of JP2009258506A5 publication Critical patent/JP2009258506A5/ja
Abandoned legal-status Critical Current

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Claims (7)

（Ａ）酸の作用によりアルカリ現像液に対する溶解度が減少する樹脂、
（Ｂ）カチオン重合性化合物、
（Ｃ）光カチオン重合開始剤、
（Ｄ）活性光線又は放射線の照射により酸を発生する化合物と、を含有することを特徴とするネガ型レジスト組成物。 (A) a resin whose solubility in an alkaline developer is reduced by the action of an acid;
(B) a cationically polymerizable compound,
(C) a photocationic polymerization initiator,
(D) a negative resist composition comprising a compound that generates an acid upon irradiation with actinic rays or radiation. 樹脂（Ａ）が、側鎖に酸の作用によりラクトン環を形成する構造を有する樹脂であることを特徴とする請求項１に記載のネガ型レジスト組成物。 The negative resist composition according to claim 1, wherein the resin (A) is a resin having a structure in which a lactone ring is formed in the side chain by the action of an acid. 樹脂（Ａ）が、脂環式構造を有する樹脂であることを特徴とする請求項１又は２に記載のネガ型レジスト組成物。  The negative resist composition according to claim 1, wherein the resin (A) is a resin having an alicyclic structure. 樹脂（Ａ）が、（ａ１）アルカリ現像液に対する溶解性を持つ基を含む繰り返し単位を有する樹脂であることを特徴とする請求項１〜３のいずれか一項に記載のネガ型レジスト組成物。  The negative resist composition according to any one of claims 1 to 3, wherein the resin (A) is (a1) a resin having a repeating unit containing a group having solubility in an alkali developer. . 請求項１〜４のいずれか一項に記載のネガ型レジスト組成物を用いて形成したレジスト膜。  The resist film formed using the negative resist composition as described in any one of Claims 1-4. 請求項５に記載のレジスト膜を露光する工程、該レジスト膜を現像する工程、とを含む、レジストパターン形成方法。 A resist pattern forming method, comprising: exposing the resist film according to claim 5 ; and developing the resist film. 前記露光が、液浸露光であることを特徴とする請求項６に記載のレジストパターン形成方法。  The resist pattern forming method according to claim 6, wherein the exposure is immersion exposure.
JP2008109335A 2008-04-18 2008-04-18 Negative resist composition and resist pattern-forming method Abandoned JP2009258506A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008109335A JP2009258506A (en) 2008-04-18 2008-04-18 Negative resist composition and resist pattern-forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008109335A JP2009258506A (en) 2008-04-18 2008-04-18 Negative resist composition and resist pattern-forming method

Publications (2)

Publication Number Publication Date
JP2009258506A JP2009258506A (en) 2009-11-05
JP2009258506A5 true JP2009258506A5 (en) 2011-04-07

Family

ID=41386002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008109335A Abandoned JP2009258506A (en) 2008-04-18 2008-04-18 Negative resist composition and resist pattern-forming method

Country Status (1)

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JP (1) JP2009258506A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5137673B2 (en) * 2008-04-26 2013-02-06 日本化薬株式会社 Photosensitive resin composition for MEMS and cured product thereof
JP2010271401A (en) * 2009-05-19 2010-12-02 Nippon Kayaku Co Ltd Resist composition
EP2531890B1 (en) 2010-02-05 2019-08-28 Canon Kabushiki Kaisha Photosensitive resin composition, method for producing structure, and liquid discharge head
EP2531891B1 (en) * 2010-02-05 2020-04-15 Canon Kabushiki Kaisha Negative photosensitive resin composition, pattern formation method, and liquid discharge head
JP5505066B2 (en) * 2010-04-28 2014-05-28 Ｊｓｒ株式会社 Radiation-sensitive resin composition, interlayer insulating film of display element, protective film and spacer, and method for forming them
JP5692035B2 (en) * 2011-12-15 2015-04-01 信越化学工業株式会社 Pattern forming method and resist composition
JP5817744B2 (en) 2013-01-17 2015-11-18 信越化学工業株式会社 Pattern forming method, resist composition, polymer compound and monomer
JP6303549B2 (en) * 2013-02-19 2018-04-04 Jsr株式会社 Negative radiation sensitive resin composition, cured film for display element, method for forming cured film for display element, and display element
JP6065862B2 (en) * 2013-04-10 2017-01-25 信越化学工業株式会社 Pattern forming method, resist composition, polymer compound and monomer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04330445A (en) * 1991-02-08 1992-11-18 Fuji Photo Film Co Ltd Photopolymerizable composition
JP3045820B2 (en) * 1991-07-02 2000-05-29 岡本化学工業株式会社 Alkali development type photosensitive composition
JP3859352B2 (en) * 1998-04-16 2006-12-20 富士通株式会社 Negative resist composition and method for forming resist pattern
JP2000056459A (en) * 1998-08-05 2000-02-25 Fujitsu Ltd Resist composition
KR100557609B1 (en) * 1999-02-22 2006-03-10 주식회사 하이닉스반도체 Novel photoresist crosslinker and photoresist composition using the same
JP3766245B2 (en) * 1999-12-16 2006-04-12 株式会社ルネサステクノロジ Pattern forming method and semiconductor device manufacturing method
JP2002187912A (en) * 2000-12-20 2002-07-05 Toppan Printing Co Ltd Propenyl ether group-containing polymer
JP3822101B2 (en) * 2001-12-26 2006-09-13 株式会社ルネサステクノロジ Radiation-sensitive composition, pattern forming method, and semiconductor device manufacturing method

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