JP2001281849A5 - - Google Patents

Download PDF

Info

Publication number
JP2001281849A5
JP2001281849A5 JP2000371650A JP2000371650A JP2001281849A5 JP 2001281849 A5 JP2001281849 A5 JP 2001281849A5 JP 2000371650 A JP2000371650 A JP 2000371650A JP 2000371650 A JP2000371650 A JP 2000371650A JP 2001281849 A5 JP2001281849 A5 JP 2001281849A5
Authority
JP
Japan
Prior art keywords
compound
positive resist
acid
resist composition
solubility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000371650A
Other languages
Japanese (ja)
Other versions
JP2001281849A (en
JP4231622B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2000371650A priority Critical patent/JP4231622B2/en
Priority claimed from JP2000371650A external-priority patent/JP4231622B2/en
Publication of JP2001281849A publication Critical patent/JP2001281849A/en
Publication of JP2001281849A5 publication Critical patent/JP2001281849A5/ja
Application granted granted Critical
Publication of JP4231622B2 publication Critical patent/JP4231622B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【特許請求の範囲】
【請求項１】 （Ａ）酸の作用により分解し、アルカリ現像液中での溶解度を増大させる基を有する樹脂、及び
（Ｂ）活性光線または放射線の照射により、少なくとも１つのフッ素原子で置換された脂肪族あるいは芳香族のカルボン酸を発生する化合物
を含有することを特徴とするポジ型レジスト組成物。
【請求項２】 （Ｄ）酸の作用により分解し、アルカリ現像液への溶解性が増大する分子量３０００以下の化合物をさらに含有することを特徴とする請求項１に記載のポジ型レジスト組成物。
【請求項３】 （Ｂ）活性光線または放射線の照射により、少なくとも１つのフッ素原子で置換された脂肪族あるいは芳香族のカルボン酸を発生する化合物、
（Ｄ）酸の作用により分解し、アルカリ現像液への溶解性が増大する分子量３０００以下の化合物、及び
（Ｅ）アルカリ可溶性樹脂
を含有することを特徴とするポジ型レジスト組成物。
【請求項４】 （Ｃ）活性光線または放射線の照射によりスルホン酸を発生する化合物をさらに含有することを特徴とする請求項１〜３のいずれかに記載のポジ型レジスト組成物。
【請求項５】 （Ｆ）含窒素塩基性化合物、及び、（Ｇ）フッ素系またはシリコン系界面活性剤をさらに含有することを特徴とする請求項１〜４のいずれかに記載のポジ型レジスト組成物。
【請求項６】 請求項１〜５のいずれかに記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。 [Claims]
1. A resin having a group which decomposes under the action of an acid to increase the solubility in an alkaline developer, and (B) which is substituted with at least one fluorine atom by irradiation with actinic rays or radiation. A positive resist composition comprising a compound that generates an aliphatic or aromatic carboxylic acid.
2. The positive resist composition according to claim 1, further comprising (D) a compound having a molecular weight of 3000 or less, which is decomposed by the action of an acid and increases the solubility in an alkali developing solution. .
(B) a compound which generates an aliphatic or aromatic carboxylic acid substituted by at least one fluorine atom upon irradiation with actinic rays or radiation,
A positive resist composition comprising (D) a compound having a molecular weight of 3000 or less, which is decomposed by the action of an acid to increase the solubility in an alkali developer, and (E) an alkali-soluble resin.
4. The positive resist composition according to claim 1, further comprising (C) a compound capable of generating a sulfonic acid upon irradiation with actinic rays or radiation.
5. The positive resist according to claim 1, further comprising (F) a nitrogen-containing basic compound, and (G) a fluorine-based or silicon-based surfactant. Composition.
6. A pattern forming method, comprising: forming a resist film from the positive resist composition according to claim 1; and exposing and developing the resist film.

JP2000371650A 2000-01-27 2000-12-06 Positive resist composition Expired - Lifetime JP4231622B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000371650A JP4231622B2 (en) 2000-01-27 2000-12-06 Positive resist composition

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-19031 2000-01-27
JP2000019031 2000-01-27
JP2000371650A JP4231622B2 (en) 2000-01-27 2000-12-06 Positive resist composition

Publications (3)

Publication Number Publication Date
JP2001281849A JP2001281849A (en) 2001-10-10
JP2001281849A5 true JP2001281849A5 (en) 2006-01-12
JP4231622B2 JP4231622B2 (en) 2009-03-04

Family

ID=26584314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000371650A Expired - Lifetime JP4231622B2 (en) 2000-01-27 2000-12-06 Positive resist composition

Country Status (1)

Country Link
JP (1) JP4231622B2 (en)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4418659B2 (en) * 2003-09-26 2010-02-17 富士フイルム株式会社 Resist composition for positive electron beam, X-ray or EUV light and pattern forming method using the same
JP2006078760A (en) 2004-09-09 2006-03-23 Tokyo Ohka Kogyo Co Ltd Resist composition for electron beam or euv (extreme ultraviolet radiation) and resist pattern forming method
TW200832068A (en) * 2006-11-28 2008-08-01 Jsr Corp Positive radiation-sensitive resin composition and pattern forming method
JP5561192B2 (en) 2010-02-26 2014-07-30 信越化学工業株式会社 High molecular compound, chemically amplified positive resist composition using the same, and pattern forming method
JP5007846B2 (en) 2010-02-26 2012-08-22 信越化学工業株式会社 Chemically amplified negative resist composition and pattern forming method
JP5505371B2 (en) 2010-06-01 2014-05-28 信越化学工業株式会社 Polymer compound, chemically amplified positive resist material, and pattern forming method
JP5278406B2 (en) 2010-11-02 2013-09-04 信越化学工業株式会社 Pattern formation method
JP5601309B2 (en) 2010-11-29 2014-10-08 信越化学工業株式会社 Positive resist material and pattern forming method using the same
JP5601286B2 (en) 2011-07-25 2014-10-08 信越化学工業株式会社 Resist material and pattern forming method using the same
JP5556765B2 (en) * 2011-08-05 2014-07-23 信越化学工業株式会社 Chemically amplified positive resist material for ArF immersion exposure and pattern forming method
JP5678864B2 (en) 2011-10-26 2015-03-04 信越化学工業株式会社 Chemically amplified positive resist material for ArF immersion exposure and pattern forming method
JP5846889B2 (en) * 2011-12-14 2016-01-20 東京応化工業株式会社 Resist composition, resist pattern forming method, compound
JP5699943B2 (en) 2012-01-13 2015-04-15 信越化学工業株式会社 Pattern forming method and resist material
JP5904180B2 (en) 2013-09-11 2016-04-13 信越化学工業株式会社 Sulfonium salt, chemically amplified resist composition, and pattern forming method
JP6028716B2 (en) * 2013-11-05 2016-11-16 信越化学工業株式会社 Resist material and pattern forming method
JP6046646B2 (en) 2014-01-10 2016-12-21 信越化学工業株式会社 Onium salt, chemically amplified positive resist composition, and pattern forming method
JP6010564B2 (en) 2014-01-10 2016-10-19 信越化学工業株式会社 Chemically amplified negative resist composition and pattern forming method
JP6062878B2 (en) 2014-03-07 2017-01-18 信越化学工業株式会社 Chemically amplified positive resist composition and resist pattern forming method
JP6142847B2 (en) 2014-06-09 2017-06-07 信越化学工業株式会社 Chemically amplified resist composition and pattern forming method
JP6515831B2 (en) 2015-02-25 2019-05-22 信越化学工業株式会社 Chemically amplified positive resist composition and method for forming resist pattern
JP6531684B2 (en) 2015-04-13 2019-06-19 信越化学工業株式会社 Chemically amplified negative resist composition using the novel onium salt compound and method for forming resist pattern
JP6583126B2 (en) 2016-04-28 2019-10-02 信越化学工業株式会社 Novel carboxylic acid onium salt, chemically amplified resist composition, and pattern forming method
US10295904B2 (en) * 2016-06-07 2019-05-21 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP6561937B2 (en) 2016-08-05 2019-08-21 信越化学工業株式会社 Negative resist composition and resist pattern forming method
US10416558B2 (en) 2016-08-05 2019-09-17 Shin-Etsu Chemical Co., Ltd. Positive resist composition, resist pattern forming process, and photomask blank
JP7009980B2 (en) 2016-12-28 2022-01-26 信越化学工業株式会社 Chemically amplified negative resist composition and resist pattern forming method
JP7009978B2 (en) 2016-12-28 2022-01-26 信越化学工業株式会社 Chemically amplified positive resist composition and resist pattern forming method
JP6645463B2 (en) * 2017-03-17 2020-02-14 信越化学工業株式会社 Resist material and pattern forming method
JP6904302B2 (en) * 2017-06-14 2021-07-14 信越化学工業株式会社 Resist material and pattern formation method
JP6922849B2 (en) 2018-05-25 2021-08-18 信越化学工業株式会社 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming method
JP7131499B2 (en) * 2018-08-09 2022-09-06 信越化学工業株式会社 Resist material and pattern forming method
JP7031537B2 (en) 2018-09-05 2022-03-08 信越化学工業株式会社 Sulfonium compound, positive resist composition, and resist pattern forming method
JP7351371B2 (en) * 2018-09-11 2023-09-27 信越化学工業株式会社 Resist composition and pattern forming method
JP7365110B2 (en) 2018-09-11 2023-10-19 信越化学工業株式会社 Iodonium salt, resist composition, and pattern forming method
JP7099250B2 (en) 2018-10-25 2022-07-12 信越化学工業株式会社 Onium salt, negative resist composition and resist pattern forming method
JP7351257B2 (en) * 2019-08-14 2023-09-27 信越化学工業株式会社 Resist material and pattern forming method
JP7415972B2 (en) 2021-02-12 2024-01-17 信越化学工業株式会社 Chemically amplified negative resist composition and resist pattern forming method
JP7415973B2 (en) 2021-02-12 2024-01-17 信越化学工業株式会社 Chemically amplified positive resist composition and resist pattern forming method
JP2023177048A (en) 2022-06-01 2023-12-13 信越化学工業株式会社 Chemically amplified negative resist composition and resist pattern forming method
JP2023177071A (en) 2022-06-01 2023-12-13 信越化学工業株式会社 Chemically amplified positive resist composition and resist pattern forming method
JP2023177272A (en) 2022-06-01 2023-12-13 信越化学工業株式会社 Chemically amplified negative resist composition and method for forming resist pattern
JP2023177038A (en) 2022-06-01 2023-12-13 信越化学工業株式会社 Chemically amplified positive resist composition and resist pattern forming method
JP2023182038A (en) 2022-06-14 2023-12-26 信越化学工業株式会社 Onium salt, resist composition and patterning method

Similar Documents

Publication Publication Date Title
JP2001281849A5 (en)
WO2002042845A3 (en) Photoacid generators and photoresists comprising same
EP1480079A8 (en) Photosensitive resin composition
JP2003241379A5 (en)
JP2004302198A5 (en)
EP1319981A3 (en) Positive resist composition
JP2002090988A5 (en)
JP2001183837A5 (en)
JP2002049156A5 (en)
JP2002303980A5 (en)
JP2003280202A5 (en)
JP2004334107A5 (en)
JP2002303978A5 (en)
JP2003262952A5 (en)
JP2003270791A5 (en)
JP2002278053A5 (en)
JP2000231194A5 (en)
JP2004287262A5 (en)
JP2001330957A5 (en)
JP2000352822A5 (en)
JP2002229190A5 (en)
JP2003173022A5 (en)
JP2003177537A5 (en)
JP2000066396A5 (en)
JP2003186195A5 (en)